Kuki gusiga TaC Coating ari ingenzi mu gukora ibikoresho bya GaN na SiC?

Gutwikira TaC ni ingenzi cyane mu gukora ibikoresho bya GaN na SiC. Bitanga uburinzi bwiza ku bidukikije bihumanya, byongera ubushyuhe, kandi bikarinda ubwandu. Ibi bintu ni ingenzi kugira ngo ibikoresho bigere ku musaruro mwiza. Isoko ry’ibikoresho by’amashanyarazi bya GaN muri Aziya na Pasifika riteganya ko rizazamuka ku kigero cya 19.33% hagati ya 2025 na 2032. Isoko rusange ry’ibi bikoresho, rifite agaciro ka miliyari 2.24 z’amadolari y’Amerika mu 2023, riteganya ko rizagera kuri miliyari 18 z’amadolari y’Amerika mu 2032, rikiyongera ku kigero cya 25%. Uku kwaguka gukomeye kw’isoko bigaragaza ko hakenewe ibisubizo bikomeye byo gukora ibikoresho.

Ibintu by'ingenzi byakunzwe

• Irangi rya TaC ririnda ibikoresho bikoreshwa mu gukora ibikoresho bya GaN na SiC. Rihagarika kwangirika guterwa n'imiti ikaze n'ubushyuhe bwinshi.
• Ibikoresho bya GaN na SiC ni byiza kurusha ibikoresho bya silikoni bishaje. Bikora vuba kandi bikoresha ingufu nke, ariko biragoye kubikora.
• Gusiga TaC bifasha mu gusukura ibikoresho bya GaN na SiC. Bibuza utuntu duto tw'umwanda kwinjira mu bikoresho.
• Gusiga TaC bituma ibikoresho bikorwa kimwe buri gihe. Ibi bivuze ko ibikoresho byiza byinshi bikorwa kandi bike bigapfa ubusa.
• Gusiga TaC ni ingenzi cyane mu gukora ibikoresho bishya by'ikoranabuhanga bikoresha ingufu. Bifasha ibi bikoresho bigezweho gukora neza no kuramba igihe kirekire.

Ibikoresho bya GaN na SiC: Itsinda rikurikira ry'ibikoresho by'amashanyarazi

Incamake y'Ibyiza bya GaN na SiC ku Gikoresho

Ibikoresho bya Gallium Nitride (GaN) na Silicon Carbide (SiC) bigaragaza intambwe ikomeye mu bijyanye n'amashanyarazi. Bitanga iterambere rikomeye ugereranyije n'ibice bisanzwe bishingiye kuri silicon. Urugero, ibikoresho bya SiC bigaragaza imiterere myiza mu bintu byinshi by'ingenzi:

Ibikoresho bya SiC bigira ubushobozi bwo gukora neza no kugabanya igihombo cy'ingufu. Bigabanya igihombo cyo kuyobora no guhinduranya. Icyuho cya SiC kiri hejuru y'inshuro eshatu ugereranyije n'icya silikoni, bigatuma habaho imiterere y'amashanyarazi mito. Ibi bigabanya imbaraga zo gukomeza gukora ku nshuro zigera ku icumi ku gipimo kimwe cya voltage. MOSFET ya SiC ya 1200V ifite igihombo cyo kuyobora ku nshuro eshanu ugereranyije n'icya silikoni IGBT. Ibikoresho bya SiC kandi bihinduranya inshuro 10 kugeza ku 100 vuba ugereranyije na silikoni, bigabanya igihombo cy'igihe gito. Diode za SiC Schottky zikuraho gusubira inyuma, zikuraho isoko nyamukuru y'igihombo. Ibi bikoresho bikora ku bushyuhe bwinshi, hamwe n'ubushyuhe bwinshi bw'amahuriro bwa 200–250°C, inshuro ebyiri ugereranyije n'ubwa silikoni. Bifite kandi imbaraga zo kuyobora ubushyuhe inshuro 2.5, bikongera ubushyuhe. Imigozi ikomeye ya atome ya SiC irwanya electromigration na gate oxide breakdown, bigatuma ubuzima buramba.

Imbogamizi mu buhanga ku bikoresho bya GaN na SiC

Gukora ibikoresho bya GaN na SiC bitanga imbogamizi zidasanzwe mu gukora. Izi mbogamizi zikomoka ku miterere y’ibikoresho ndetse n’uburyo bigoye bwo kubitunganya.

Ku bikoresho bya GaN, ababikora bahura n'imbogamizi nyinshi:

• Ubwiza bwa Crystal n'Ubucucike bw'Inenge: Kugera ku bwiza bwa kristale buri hejuru hamwe n'ubucucike buke biragoye. GaN ikunze gukurira ku bintu nka safiro cyangwa silikoni, bifite ibice bitandukanye bya lattice. Uku kudahuza neza bitera inenge mu gihe cyo gukura kwa epitaxial, bigira ingaruka ku mikorere y'igikoresho.
• Uburyo bwo Gukura mu Gihe cy'Iburyo bwo Kureshya ...Uburyo nka Metal-Organic Chemical Vapor Deposition (MOCVD) burahenze kandi busaba kugenzura neza. Hydride Vapor Phase Epitaxy (HVPE) itanga gukura vuba ariko igorana mu mikorere ya gaze n'ubwiza bw'ubuso.
• Gukoresha imiti igabanya ubukana n'uburyo bumwe bwo kuyikoreshaKugera ku rugero rumwe rwo gukoresha imiti igabanya ubukana bw'ibiyobyabwenge, cyane cyane kuri GaN yo mu bwoko bwa p, biragoye. Ibi biterwa n'imiterere y'ibikoresho n'imikorere y'ibinyabutabire igoye.
• Ingano y'ibice by'ubutaka n'ikiguzi cyabyo: Kuboneka n'igiciro cya substrate bigira ingaruka ku buryo GaN ishobora kwaguka. Substrate za silicon zirahendutse ariko zitera ubwumvikane buke mu buryo bwa lattice.

Gukora ibikoresho bya SiC nabyo bihura n'ingorane zikomeye:

• Ubukomere Bukabije n'Uburemere Butoshye: Ubukomere bwa SiC (Mohs 9) n'ubudahangarwa bugorana mu gukora. Gutunganya irangi rya wafer bigenda buhoro kandi ntibikora neza, bisaba ibintu byihariye.
• Gufata Wafer: Gufata wafer za SiC biragoye bitewe nuko zigoranye. Ibi bituma zicika, zicika, kandi zigahumana.
• Ibisabwa kuri Epitaxy: Epitaxy kuri SiC isaba ubushyuhe bwinshi kurusha silicon. Ibi bigabanya igihe cyo kubaho cy'ibice by'icyumba kandi byongera ikiguzi cyo kuyitaho.
• Gutera Ion: Gutera aluminiyumu mu gutera doping yo mu bwoko bwa p-type ibibazo byo kudahindagurika kw'isoko rya ioni. Dopants ntizikwirakwira byoroshye kandi zishobora gukora imiyoboro. Ubushyuhe bwinshi bwo gutera (1800°C) bushobora gutuma ubuso buhinduka karuboni.

Ikibazo nyamukuru: Kwangirika kw'ibikoresho no kwanduzwa mu gutunganya

Ingese n'isuri mu bidukikije bibi

Ibikoresho bikorerwa mu nganda zikora ibikoresho bya semiconductor bihura n’iyangirika rikomeye ry’ibikoresho no kwangirika. Ibidukikije bibi, harimo no guhura n’ibintu bihumanya ikirere n’imikorere yo gukurura, ni byo bitera ibi bibazo. Ibi bituma igihe cyo gukora ibikoresho kigabanuka kandi bigatuma umusaruro ugabanuka. Ibikoresho byo gukata no gushyiramo ibikoresho, cyane cyane, bihura n’ibihe bikomeye cyane. Bihura n’ibinyabutabire bya plasma, ubushyuhe bwinshi, n’ibindi binyabutabire birwanya ibidukikije. Ibi bintu bitera isuri n’ibitero by’ibinyabutabire. Ibi bintu byose hamwe bigira uruhare mu gutuma ibikoresho binanirwa gukora neza no kwangirika kw’ibikoresho no kugabanya imikorere y’ibikoresho.

"Uburyo bwo kwangirika kw'ibice bifatanye bukunze kubaho". Ingufu zigabanya imbaraga zo guhuza ibice. Uku gucika intege bituma imiyoboro iterwa n'umunaniro ikwirakwira vuba. Iyi miyoboro ikwirakwira mu bice by'ibumba bikungahaye ku gipimo cyo guteranya. Ubu buryo bwo kwangiza ibintu bugoye kubukuraho hakoreshejwe ikoranabuhanga risanzwe ryo gusiga hejuru, cyane cyane mu bidukikije bikabije birimo kwangirika.

Ingaruka zo kwanduzwa ku mikorere y'ibikoresho bya GaN na SiC

Kwandura bigira ingaruka zikomeye ku mikorere n'umusaruro w'ibikoresho bya GaN na SiC. Ndetse n'umwanda muto cyane ushobora gutera inenge, bigatera imikorere mibi y'ibikoresho cyangwa kugabanuka k'ubushobozi bwabyo. Ku bikoresho bya GaN, ibintu bimwe na bimwe bikunze gutera ibibazo:

• Imitego ya elegitoroniki yimbitse (E2 na E4): Iyi mitego iriyongera nyuma yo gusimbuka kwa protoni na electron. Itera gate na drain-lag, bigatuma ubu buryo busenyuka kandi bukangirika muri AlGaN/GaN HEMTs.
• Guhinduka kw'imyanya: Gucika kw'imigozi ifunguye bituma habaho gucika kw'irembo muri AlGaN/GaN HEMTs. Gucika kw'imigozi ishushanyije na Indium (In) bigira ingaruka kuri InAlN/GaN HEMTs. Binafitanye isano n'imitego ya elegitoroniki yimbitse, gufatira, gucika kw'umuyoboro w'amashanyarazi wo munsi y'ubutaka, no kwangirika muri rusange.
• Imyanya ya Gallium irimo Silicon (Si) cyangwa Oxygen (O): Izi complexes zikora nk'imitego ikomeye muri n-GaN na n-AlGaN.
• Karuboni (C)Karuboni kandi ikora nk'umutego ukomeye wo gufatira imyobo muri n-GaN na n-AlGaN.
• Hydrogen: Uyu mwanda w’inyuma, ukunze kugaragara mu bikoresho bya MOCVD na NH3 bikungahaye kuri MBE, ugira ingaruka ku mpinduka z’amashanyarazi no kwangirika kwa transconductance mu gihe cy’imirasire ya proton.
• Abemera byimbitse: Kwinjizwa kwa za acceptors zimbitse mu gice cy'inzitizi bisobanura impinduka mu muvuduko w'amashanyarazi n'uburyo umuyoboro ugenda muri transistors za AlGaN/GaN.
• Imitego miremire iri mu gice cya GaN buffer: Iyi mitego ishobora gutera ingaruka nk'iz'abakira ibintu byimbitse. Igira uruhare mu kugabanuka gato kwa 2DEG no gukwirakwira kwa electron za 2DEG.

Uburyo TaC Coating ikemura ibibazo bikomeye mu nganda

Ubusa budasanzwe bwa TaC Coating

Gutwikira TaC bitanga ubushobozi budasanzwe bwo kudakora neza kw'ibinyabutabire. Iyi miterere ituma igira agaciro gakomeye mu nganda za semiconductor. Irwanya isuri iterwa n'imyuka yangiza nka chloride na fluoride. Gutwikira bigumana ubushobozi buke mu bidukikije birimo ubushyuhe bwinshi. Ibi birinda ingaruka mbi z'ibinyabutabire zitifuzwa hamwe n'imyuka ikora neza. Iyi miterere ni ingenzi cyane mu gutuma ibintu bitunganywa neza kandi bigashyirwa mu buryo bwiza. By'umwihariko, ifasha mu gukoresha Silicon Carbide Wafer Boats n'ibindi bice by'ingenzi.

"Ugereranyije n'ingufu za SiC, TaC ifite ubukana bwinshi bw'ibinyabutabire n'ubudahangarwa bwo kwangirika."

Irangi rya TaC rirwanya amoniya ishyushye. Rirwanya kandi umwuka wa hydrogen, umwuka wa silicon, n'ibyuma bishongeshejwe. Iri rangi ritanga uburinzi kuri H2, NH3, SiH4, na Si mu bidukikije bikomeye bya shimi.

Ubushyuhe bwinshi n'ubukomere bwa TaC Coating

Ubudahangarwa bwinshi bw'ubushyuhe n'ubukomere bwa mekanike ni ingenzi cyane ku bice bigize ikorwa rya GaN na SiC. Graphite ipfundikiye ya TaC igaragaza ubudahangarwa bwiza bwa shimi ugereranije na graphite yambaye ubusa cyangwa graphite ipfundikiye ya SiC. Iguma ihamye mu bushyuhe bwinshi, ikagera kuri 2600°C. Ntigira ingaruka ku bintu byinshi by'icyuma. Ibi bituma iba irangi rikunzwe cyane mu gukura kwa semiconductor single crystal hamwe no gushushanya wafer mu gisekuru cya gatatu. Ifite akamaro cyane ku bikoresho bya MOCVD mu gukura kwa GaN cyangwa AlN single crystal hamwe n'ibikoresho bya PVT mu gukura kwa SiC single crystal. Ibi byongera cyane ubwiza bwa kristale.

Irangi rya Tantalum Carbide (TaC) rishobora gukoreshwa neza ku bushyuhe bwinshi kugeza kuri 2600°C. Ntirigira ingaruka ku bintu byinshi by'icyuma. Iri rangi rifatwa nk'iry'ingenzi mu gukura kwa semiconductor single crystal hamwe no gushushanya wafer. By'umwihariko, rifasha mu gukura kwa MOCVD mu bikoresho bya GaN cyangwa AlN single crystals hamwe no gukura kwa PVT mu bikoresho bya SiC single crystals.

Ubukana bw'iki gikoresho nabwo butuma kiramba. Gifite ubukana bwa Vickers bugera kuri 1,880 HV.

Ubuziranenge Buhanitse cyane kandi Bukora uduce duto dukoresheje TaC Coating

Kugumana ubuziranenge buri hejuru cyane no kugabanya umusaruro w’udusimba ni ingenzi cyane mu nganda zikora ibikoresho bya semiconductor. Ibikoresho bya CVD TaC bizwiho kuba bifite umusaruro muto cyane. Imiterere yabyo yoroshye igabanya cyane ubushobozi bwo kwanduza udusimba. Ibi, nabyo bifasha kunoza ubuziranenge no gutanga umusaruro mu gihe cyo gukura kwa epitaxial.

Uburyo bwo gusubiramo ibikorwa neza no gutanga umusaruro mwiza hamweGutwikira TaC

Gusiga TaC birushaho kongera ubushobozi bwo gusubiramo ibikorwa mu nganda za GaN na SiC. Gukomera cyane kw'iyi gaspeti no guhangana n'ibidukikije bikomeye bituma ibice bya reactor bigumana ubuziranenge bwabyo n'imiterere y'ubuso mu gihe kirekire cy'imikorere. Uku guhindagurika ni ingenzi kugira ngo hagerwe ku buryo bumwe bwo gushyiramo filime, imiterere nyayo ya doping, no kugira imiterere ihamye y'ubushyuhe mu bikorwa byinshi. Iyo ubuso bw'ibikoresho bugumye buhamye kandi butangiritse, abakora ibikoresho bashobora kongeramo ibipimo by'imikorere bifuza. Uku guteganya ibintu bigabanya ihinduka ry'imiterere y'ibikoresho kuva kuri wafer kugeza kuri wafer no ku ishashi ku rindi.

Uku kongera kwisubiramo bivamo umusaruro mwinshi mu nganda. Imiterere ihamye y’imikorere igabanya ingaruka mbi ziterwa no kwangirika kw’ibikoresho, kwandura, cyangwa imiterere idahuye yo gutunganya. Urugero, ubushyuhe bwinshi bw’ibinyabutabire bya TaC birinda ingaruka mbi hagati y’imyuka ikoreshwa mu gutunganya n’inkuta z’ibinyabutabire, bishobora guteza imyanda cyangwa guhindura imiterere y’imigendekere ya gaze. Ubushyuhe bwinshi butuma ibice bidahinduka cyangwa ngo bivunike mu bushyuhe bukabije, bigakomeza imiterere nyayo y’ingenzi kugira ngo bikure neza. Byongeye kandi, ubuziranenge bwinshi cyane n’ikorwa ry’uduce duto dukoreshwa mu gutunganya TaC bigabanya cyane ubwandu bw’uduce duto, impamvu ikomeye ituma ibikoresho binanirwa gukora neza. Mu kugabanya izi mpamvu zisanzwe z’ihindagurika n’inenge, abakora ibikoresho bakora ibikoresho byinshi bya GaN na SiC kuri buri wafer, binoza imikorere rusange y’umusaruro kandi bikagabanya imyanda.

Imikoreshereze y'ingenzi ya TaC Coating mu musaruro wa GaN na SiC

Gusiga TaC ku bice bya Reactor

Gutwikira TaC bigira uruhare runini mu kurinda ibice bitandukanye bya reactor mu musaruro wa GaN na SiC. Ibice byihariye yungukira muri ubu buryo bwo gutwikira bugezweho birimo wafer carriers, injectors, susceptors, na heaters. Muri reactors za SiC CVD, ibice by'ingenzi bitwikiriwe na Tantalum Carbide bigaragaza iterambere rikomeye mu mikorere. Ubu buryo bwo gutwikira bugaragara kubera ubukana bwabwo bukabije n'ubushobozi bwo gutwara ibyuma. Butanga ubudahangarwa budasanzwe kuri halogen na hydrogen corruption, bigatuma buba bwiza cyane mu miterere y'amaraso n'ubushyuhe bwinshi.

Iyi pate itanga kandi ubushobozi bwo gutwara ubushyuhe bwinshi, ikagabanya ubushyuhe neza kandi ikarinda ubushyuhe bwinshi mu gihe cy'ubushyuhe bwinshi. Irinda ibice by'ingenzi by'itanura n'ibice bya reactor ku bushyuhe bugera kuri 2200°C, igakomeza ubuziranenge bwa shimi n'ubw'imashini. Tantalum carbide ifite ubudahangarwa bukomeye bwa corruption kuri aside na alkali nyinshi, ikarinda kwangirika kwa substrate mu bidukikije bya corruption. Irwanya hydrogen, ammonia, monosilane, na silicon, ikanarinda ahantu hakomeye ha chemical. Ubu burinzi bwongerewe butuma ibice bimara igihe kirekire. Pate ya TaC ifite kandi ubuziranenge bwinshi cyane, aho ingano y'umwanda akenshi iri munsi ya 5 ppm. Ibi bigabanya cyane inenge nka micropores na etch pits muri crystals za SiC, bigatuma kristalo irushaho kuba nziza.

Gusiga TaC Coating ku byumba byo gushushanya no gutunganya Plasma

Gupfuka TaC ni ingenzi cyane ku byumba by’ibumba n’ibikoresho bitunganya plasma. Ubukana bwayo budasanzwe n’ubudakora neza mu binyabutabire birwanya kwangirika no kwangirika bituruka ku bidukikije bya plasma ndetse n’ingaruka mbi za shimi. Ibi bituma ibice bikomeza gukora neza mu bihe bikomeye. Ubuziranenge bukabije bw’igipfuka, aho ibara ry’umwanda riri munsi ya 5 ppm, bigabanya ibyago byo kwandura mu mikurire ya kristu.

Gufatana cyane no kwaguka guke kw'ubushyuhe birinda gucika cyangwa gutandukana mu gihe cy'ubushyuhe. Ibi ni ingenzi cyane kugira ngo hakomeze kuba imiterere myiza n'ubudahinduka mu gukora semiconductor. Mu gukura kwa GaN/SiC epitaxial, irangi ririnda imikorere ya gaze kandi rigabanye inenge, rikongera umusaruro muri rusange. Ibikoresho bifite ubuziranenge bwinshi n'irangi rya TaC riramba bigabanya ibyuka bivamo n'ibyuka. Ibi bigabanya ibyago byo kwandura no gucika kw'ibyuka. Irangi rikomeye ritanga ubudahangarwa bwiza ku isuri rya plasma no kwibasirwa na shimi, bigatuma ibice bimara igihe kinini mu kazi.

Gusiga TaC si ingirakamaro gusa, ahubwo ni ingenzi cyane mu gutuma ibikoresho bya GaN na SiC bikorwa neza kandi mu buryo buhendutse. Bigabanya imbogamizi zo kwandura no kwangirika mu mikorere yabyo. Uruhare rwabyo ruzakura gusa uko ikoranabuhanga rigezweho rikomeza gutera imbere. Ibi bituma habaho udushya duhoraho no kwaguka kw'isoko.

Ibibazo Bikunze Kubazwa

Gusiga TaC ni iki??

Gusiga TaC ni urwego rurinda Tantalum Carbide ikoreshwa ku bice bya grafiti. Abakora bakoresha uburyo bwa Chemical Vapor Deposition (CVD). Iki gikoresho gikomeye kandi kidakora neza cya ceramic cyongera ubushobozi bwo kudahinduka no kudakora neza kw'imiti mu bikorwa bya semiconductor.

Ni gute gusiga TaC bifasha kongera umusaruro mu nganda?

Gutwikira TaC bitanga uburyo bwo gukora ibintu mu buryo buhoraho. Birinda kwangirika no kwanduza ibikoresho. Uku guhagarara neza bigabanya inenge n'impinduka mu miterere y'ibikoresho. Abakora ibikoresho bagera ku mubare munini w'ibikoresho bya GaN na SiC bikora neza kuri buri wafer.

Kuki gusiga TaC bikundwa kuruta gusiga SiC muri bimwe mu bikorwa?

Gutwikira TaC bitanga ubushobozi bwo kudakora neza kw'ibinyabutabire no kurwanya ingese ugereranije n'udupira twa SiC. Bihangana n'ibidukikije bikomeye bya shimi n'ubushyuhe bwinshi. Ibi bituma birushaho kuba byiza mu bikorwa byihariye byo gukora GaN na SiC.

Ni ibihe bice byihariye bigira uruhare mu gusiga TaC mu gukora GaN/SiC?

Ibice bigize reactor nk'ibikoresho byo gutwara wafer, injectors, susceptors, n'ibishyushya bigira akamaro kanini. Ibyuma byo gushushanya n'ibikoresho byo gutunganya plasma nabyo bikoresha TaC coating. Birinda ibyo bice imyuka yangiza, ubushyuhe bwinshi, na plasma itera.

Tera intambwe ikurikiraho

Witeguye kuzana ituze ridasanzwe no kwemerera ibikorwa byawe bya GaN na SiC?

Vugana n'inzobere zacu mu bumenyi bw'ibikoresho uyu munsikugira ngo tuganire ku buryo umuti wo gusiga TaC ushobora guhindura imikorere ya MOCVD cyangwa CVD reactor yawe.