Kutheni i-TaC Coating ibalulekile kwimveliso yezixhobo zeGaN kunye neSiC?

Ukugquma kweTaC kubaluleke kakhulu kwimveliso yezixhobo zeGaN kunye neSiC. Kubonelela ngokhuseleko oluphezulu kwiimeko zenkqubo yokubola, kuphucula uzinzo lobushushu, kwaye kuthintela ungcoliseko. Ezi zinto zibalulekile ekufezekiseni ukusebenza okuphezulu kwezixhobo kunye nemveliso. Imarike yezixhobo zamandla zeGaN zaseAsia-Pacific iqikelela i-19.33% Compound Annual Growth Rate phakathi kowama-2025 nowama-2032. Imarike iyonke yezi zixhobo, exabisa i-USD 2.24 yezigidigidi ngo-2023, ilindele ukufikelela kwi-USD 18 yezigidigidi ngo-2032, ikhula kwi-25% CAGR. Olu lwando lubalulekileyo lwemarike lugxininisa imfuneko yezisombululo zokuvelisa eziqinileyo.

Izinto ezibalulekileyo ekufuneka ziqwalaselwe

• I-TaC coating ikhusela izixhobo ezisetyenziselwa ukwenza izixhobo zeGaN kunye neSiC. Iyayithintela ingozi evela kwiikhemikhali ezinobungozi kunye nobushushu obuphezulu.
• Izixhobo zeGaN kunye neSiC zingcono kunezixhobo zesilicon ezindala. Zisebenza ngokukhawuleza kwaye zisebenzisa amandla amancinci, kodwa kunzima ukuzenza.
• Ukwaleka kweTaC kunceda ukwenza izixhobo zeGaN kunye neSiC zicoceke. Kuthintela ubumdaka obuncinci ukuba bungangeni kwizixhobo.
• Ukufakwa kweTaC kuqinisekisa ukuba izixhobo zenziwa ngendlela efanayo ngalo lonke ixesha. Oku kuthetha ukuba kwenziwa izixhobo ezilungileyo ezininzi kwaye zimbalwa ezichithwayo.
• Ukwaleka kweTaC kubaluleke kakhulu ekwenzeni izixhobo zombane ezintsha. Kunceda ezi zixhobo ziphambili zisebenze kakuhle kwaye zihlale ixesha elide.

Izixhobo zeGaN kunye neSiC: Isizukulwana Esilandelayo se-Power Electronics

Isishwankathelo seenzuzo zeGaN kunye neSiC Device

Izixhobo zeGallium Nitride (GaN) kunye neSilicon Carbide (SiC) zimele inyathelo elikhulu phambili kwi-electronics enamandla. Zibonelela ngophuculo olukhulu kunezixhobo zemveli ezisekelwe kwisilicon. Izixhobo zeSiC, umzekelo, zibonisa iimpawu ezigqwesileyo kwiiparameter ezininzi ezibalulekileyo:

Izixhobo zeSiC zifumana ukusebenza okuphezulu kunye nokulahleka kwamandla okuphantsi. Zinciphisa zombini ilahleko zokuqhuba kunye nokutshintsha. I-bandgap yeSiC iphindwe kathathu kuneyesilicon, ivumela ukuba kubekho iileya ezincinci zokushukuma. Oku kunciphisa ukumelana nombane ukuya kuthi ga kwishumi ukuya kuthi ga kwi-voltage efanayo. I-1200V SiC MOSFET inokulahleka kokuqhuba okuphantsi ngokuphindwe kahlanu kune-silicon IGBT. Izixhobo zeSiC zikwatshintsha ngokukhawuleza ngokuphindwe ka-10 ukuya kwi-100 kune-silicon, nto leyo enciphisa ilahleko zesikhashana. Ii-diode zeSiC Schottky zisusa ukubuyiselwa okungasemva, zisusa umthombo omkhulu wokulahleka. Ezi zixhobo zisebenza kumaqondo obushushu aphezulu, kunye nobushushu obukhulu be-junction obuyi-200–250°C, kabini kunobo be-silicon. Zikwanayo ne-thermal conductivity engcono ngokuphindwe ka-2.5, nto leyo ephucula ukusasazwa kobushushu. Iibhondi ze-atomic eziqinileyo zeSiC ziyamelana nokufuduka kwe-electromigration kunye nokuqhekeka kwe-gate oxide, nto leyo enegalelo kubomi obude.

Imingeni yokuvelisa izixhobo zeGaN kunye neSiC

Ukuvelisa izixhobo zeGaN kunye neSiC kuzisa imingeni eyahlukileyo yokuvelisa. Le mingeni ivela kwiimpawu zendalo zezinto kunye neenkqubo ezintsonkothileyo zokwenza.

Kwizixhobo zeGaN, abavelisi bajongene nemiqobo emininzi:

• Umgangatho wekristale kunye noxinano olupheleleyo lweziphene: Ukufikelela kumgangatho ophezulu wekristale kunye noxinano oluphantsi lwesiphene kunzima. I-GaN idla ngokukhula kwiindawo ezifana ne-sapphire okanye i-silicon, ezinee-lattice constants ezahlukeneyo. Oku kungafani kudala iziphene ngexesha lokukhula kwe-epitaxial, okuchaphazela ukusebenza kwesixhobo.
• Iinkqubo zoKhula lwe-EpitaxialIindlela ezifana neMetal-Organic Chemical Vapor Deposition (MOCVD) zibiza kakhulu kwaye zifuna ulawulo oluchanekileyo. I-Hydride Vapor Phase Epitaxy (HVPE) inika ukukhula okukhawulezileyo kodwa iyenza nzima impendulo ye-gas-phase kunye nomgangatho womphezulu.
• Unyango lweziyobisi kunye nokufana: Ukufikelela kumanqanaba afanayo okusebenzisa i-doping, ingakumbi kwi-p-type GaN, kunzima. Oku kungenxa yeempawu zezinto kunye neenkqubo zeekhemikhali ezintsonkothileyo.
• Ukufumaneka kweSubstrate kunye neendlekoUkufumaneka kunye nexabiso lee-substrates kuchaphazela ukuguquguquka kweGaN. Ii-substrates zeSilicon zibiza kancinci kodwa zizisa ukungafani okukhulu kwe-lattice.

Imveliso yesixhobo seSiC ikwajongene nobunzima obukhulu:

• Ukuqina Okugqithisileyo Nokubhitya: Ubunzima beSiC (Mohs 9) kunye nokubuthathaka kwenza kube nzima ukwenziwa. Ukupolisha i-wafer kuhamba kancinci kwaye akusebenzanga, kufuna ulusu olukhethekileyo.
• Ukuphathwa kweWafer: Ukuphatha ii-wafer ze-SiC kunzima ngenxa yokuba zibuthathaka. Oku kukhokelela ekuqhekekeni, ekuqhekekeni, nasekungcoleni kwamasuntswana.
• Iimfuno ze-Epitaxy: I-Epitaxy ye-SiC ifuna amaqondo obushushu aphezulu kune-silicon. Oku kunciphisa ixesha lokuphila kwezixhobo zegumbi kwaye kwandisa iindleko zokulungisa.
• Ukufakelwa kwe-Ion: Ukufakelwa kwe-aluminium kwi-p-type doping ubuso beengxaki zozinzo lwe-ion source. Ii-Dopants azisasazeki lula kwaye zinokwenza ii-craters. Amaqondo obushushu aphezulu okutshisa (1800°C) anokukhabhoni umphezulu.

Ingxaki Ephambili: Ukonakala Kwezinto Ezisetyenziswayo Nokungcoliswa Kwezinto Ezisetyenziswayo

Ukugqwala kunye nokuKhukuliseka kwezixhobo kwiindawo ezinobungozi

Izixhobo zokwenza i-semiconductor zijongene nokuwohloka okukhulu kwezinto kunye nokuguga kwazo. Iindawo ezinobungozi, kubandakanya ukuchatshazelwa ziikhemikhali ezirhabaxa kunye neenkqubo zokurhawuzelela, zibangela ezi ngxaki. Oku kukhokelela ekunciphiseni ubomi bezixhobo kunye nokusebenza kakuhle kwemveliso. Izixhobo zokugrumba kunye nokubeka izinto, ngakumbi, zinyamezela iimeko ezinzima. Zidibana ne-plasma, amaqondo obushushu aphezulu, kunye neekhemikhali ezisebenzayo. Ezi zinto zibangela ukukhukuliseka kunye nokuhlaselwa ziikhemikhali. Ezi meko zidibene zinegalelo ekungasebenzi kakuhle kwezixhobo ngokonakalisa izixhobo kunye nokunciphisa ukusebenza kwezixhobo.

"Indlela yokusilela kokudibanisa ukubola nokuguguleka" idla ngokuvela. Imithombo edla ngokubola inciphisa amandla okubopha imida yeenkozo. Oku buthathaka kuvumela ukuba imifantu yokudinwa okubangelwa kukungqubana isasazeke ngokukhawuleza. Ezi mifantu zisasazeka kwiindawo zokudibanisa ezityebileyo ze-tin. Le ndlela yomonakalo odibeneyo ingqineka inzima ukuyicinezela ngetekhnoloji yendabuko yokugquma umphezulu, ingakumbi kwiindawo ezinzima zokungqubana nokungqubana.

Impembelelo yoNgcoliseko ekusebenzeni kweSixhobo seGaN kunye neSiC

Ungcoliseko luchaphazela kakhulu ukusebenza kunye nokuveliswa kwezixhobo zeGaN kunye neSiC. Nokuba zincinci kangakanani na izinto ezingcolisekileyo zinokubangela iziphene, nto leyo ekhokelela ekungasebenzi kakuhle kwezixhobo okanye ekusebenzeni kakuhle okunciphileyo. Kwizixhobo zeGaN, izinto ezithile ezingcolisekileyo zihlala zibangela iingxaki:

• Imigibe ye-electron enzulu (E2 kunye ne-E4): Ezi traps ziyanda emva kokukhanyiswa kweproton kunye ne-electron. Zibangela i-gate kunye ne-drain-lag phenomena, zinegalelo ekuweni nasekuwohlokeni kwangoku kwi-AlGaN/GaN HEMTs.
• Ukufuduka: Ukususwa kwezikrufu ezivulekileyo kukhuthaza ukuvuza kwesango kwi-AlGaN/GaN HEMTs. Ukususwa okuhonjiswe yi-Indium (In) kuchaphazela i-InAlN/GaN HEMTs. Zikwanxibelelana nemigibe ye-electron enzulu, ukubamba, ukuvuza komsinga ongaphantsi komgca, kunye nokuwohloka ngokubanzi.
• Izithuba zeGallium ezidityaniswe neSilicon (Si) okanye iOxygen (O)Ezi complexes zisebenza njengemigibe emikhulu kwi-n-GaN kunye ne-n-AlGaN.
• Ikhabhoni (C)Ikhabhoni ikwasebenza njengomgibe omkhulu wemingxunya kwi-n-GaN kunye ne-n-AlGaN.
• I-hydrogen: Oku kungacoceki kwangasemva, okuxhaphakileyo kwi-MOCVD kunye nezinto ezityalwe kwi-MBE ezityebileyo ze-NH3, kuchaphazela utshintsho lwe-threshold voltage kunye nokudilizwa kwe-transconductance phantsi kwe-proton irradiation.
• Abamkeli abanzulu: Ukungeniswa kwee-deep acceptors kumaleko wesithintelo kuchaza utshintsho kwi-threshold voltage kunye nokuhamba kwe-channel kwi-AlGaN/GaN transistors.
• Imigibe enzulu kwi-GaN buffer layer: Ezi zigibe zingakhokelela kwiziphumo ezifanayo nezamkeli ezinzulu. Zinegalelo ekunciphiseni okuncinci kwe-2DEG kunye nokusasazeka kwee-electron ze-2DEG.

Indlela iTaC Coating ejongana ngayo nemingeni ebalulekileyo yokuvelisa

Ukungasebenzi kakuhle kweekhemikhali zeTaC Coating

I-TaC coating inika ukungangeni kakuhle kweekhemikhali. Le propati iyenza ibe luncedo kakhulu kwimveliso ye-semiconductor. Imelana ngempumelelo nokukhukuliseka okuvela kwiigesi ezirhabaxa ezifana nee-chloride kunye ne-fluoride. I-coating igcina i-reactivity ephantsi kwiindawo ezinobushushu obuphezulu. Oku kuthintela iimpendulo zeekhemikhali ezingafunekiyo ngeegesi ezisabelayo. Olu phawu lubalulekile ekuqinisekiseni ubunyulu benkqubo kunye nokubekwa kwezinto ezisemgangathweni ophezulu. Inceda ngokukodwa ukusetyenziswa okubandakanya iiSilicon Carbide Wafer Boats kunye nezinye izinto eziphambili.

"Xa kuthelekiswa nokwaleka kweSiC, iTaC inokungasebenzi kakuhle kweekhemikhali kunye nokumelana nokugqwala okuphezulu."

Iingubo zeTaC ziyamelana ne-ammonia eshushu. Zikwamelana nomphunga we-hydrogen, umphunga we-silicon, kunye neentsimbi ezinyibilikisiweyo. Ezi ngubo zikhusela kwi-H2, NH3, SiH4, kunye ne-Si kwiindawo ezineekhemikhali ezinzima.

Uzinzo oluphezulu lobushushu kunye nokuqina koomatshini kweTaC Coating

Ukuzinza okuphezulu kobushushu kunye nobunzima boomatshini kubalulekile kwizinto ezikwimveliso yeGaN kunye neSiC. I-graphite egqunywe yiTaC ibonisa ukumelana nokugqwala kweekhemikhali okuphezulu xa kuthelekiswa ne-graphite engenanto okanye i-graphite egqunywe yiSiC. Ihlala izinzile kumaqondo obushushu aphezulu, ifikelela kwi-2600°C. Ayisebenzi ngezinto ezininzi zesinyithi. Oku kwenza ukuba ibe yingubo ekhethwayo yokukhula kwekristale enye ye-semiconductor yesizukulwana sesithathu kunye nokugqwala kwe-wafer. Iluncedo ngakumbi kwizixhobo zeMOCVD ekukhuleni kwekristale enye yeGaN okanye iAlN kunye nezixhobo zePVT ekukhuleni kwekristale enye yeSiC. Oku kuphucula kakhulu umgangatho wekristale.

Iingubo zeTantalum Carbide (TaC) zingasetyenziswa ngokuzinzileyo kumaqondo obushushu aphezulu ukuya kuthi ga kwi-2600°C. Azisabelani nezinto ezininzi zesinyithi. Olu qweqwe luthathwa njengolona lufanelekileyo kwisizukulwana sesithathu se-semiconductor single crystal growth kunye ne-wafer etching. Ngokukodwa, lunceda ukukhula kwezixhobo zeMOCVD zeekristale zeGaN okanye zeAlN single kunye nokukhula kwezixhobo zePVT zeekristale zeSiC single.

Ukuqina koomatshini kwale nto nako kunegalelo ekuqineni kwayo. Inobunzima beVickers obumalunga ne-1,880 HV.

Ukucoceka Okuphezulu Kakhulu kunye Nokuveliswa Kwamasuntswana Aphantsi NgeTaC Coating

Ukugcina ubunyulu obuphezulu kakhulu kunye nokunciphisa ukuveliswa kwee-particles kubaluleke kakhulu kwimveliso ye-semiconductor. Ii-CVD TaC coated carriers ziyaziwa ngamazinga azo aphantsi kakhulu okuveliswa kwee-particles. Iimpawu zazo zomphezulu ogudileyo zinciphisa kakhulu amathuba okungcola kwee-particles. Oku, kunceda ukuphucula ubunyulu kunye nemveliso ngexesha leenkqubo zokukhula kwe-epitaxial.

Ukuphuculwa kokuphindaphinda kweNkqubo kunye nokuvelisa isivuno ngeUkwaleka kweTaC

Ukugquma kweTaC kuphucula kakhulu ukuphindaphindeka kwenkqubo ekwenzeni izixhobo zeGaN kunye neSiC. Ukuqina okugqwesileyo kokugquma kunye nokumelana neendawo ezinzima zokucubungula kuqinisekisa ukuba izixhobo zereactor zigcina ukuthembeka kwazo kunye neempawu zomphezulu ixesha elide lokusebenza. Olu lungelelwano lubalulekile ekufezekiseni ukufakwa kwefilimu efanayo, iiprofayili ezichanekileyo zokusebenzisa idosi, kunye neemeko zobushushu ezizinzileyo kuzo zonke iindlela zokuvelisa. Xa iindawo zezixhobo zihlala zizinzile kwaye zingenakonakala, abavelisi banokuphinda bavelise ngokuthembekileyo iiparameter zenkqubo ezifunwayo. Oku kuqikelelwa kunciphisa umahluko kwiimpawu zesixhobo ukusuka kwi-wafer ukuya kwi-wafer kunye ne-batch ukuya kwi-batch.

Oku kuphinda-phinda okuphuculweyo kuthetha ngokuthe ngqo ukuba kubekho isivuno esiphezulu sokuvelisa. Indawo yenkqubo ezinzileyo inciphisa ukwanda kweziphene ezibangelwa kukuwohloka kwezinto, ungcoliseko, okanye iimeko zokucubungula ezingaguqukiyo. Umzekelo, ukungangeni kweekhemikhali kwe-TaC coating kuthintela iimpendulo ezingafunekiyo phakathi kweegesi zenkqubo kunye neendonga ze-reactor, ezinokuthi ngenye indlela zingenise ukungcola okanye zitshintshe amandla okuhamba kwegesi. Uzinzo lwayo oluphezulu lobushushu luqinisekisa ukuba izinto azigobi okanye zonakale phantsi kobushushu obugqithisileyo, zigcina iijiyometri ezichanekileyo ezibalulekileyo ekukhuleni okufanayo. Ngaphezu koko, ubunyulu obuphezulu kakhulu kunye nokuveliswa kwamasuntswana aphantsi anxulunyaniswa ne-TaC coating kunciphisa kakhulu ungcoliseko lwamasuntswana, unobangela omkhulu wokusilela kwesixhobo. Ngokunciphisa le mithombo iqhelekileyo yokuguquguquka kunye neziphene, abavelisi bavelisa inani elikhulu lezixhobo ze-GaN kunye ne-SiC ezisebenzayo nge-wafer nganye, bephucula ukusebenza kakuhle kwemveliso iyonke kwaye benciphisa inkunkuma.

Izicelo eziphambili zeTaC Coating kwiGaN kunye neSiC Production

Ukwaleka kweTaC kwiinxalenye zeReactor

Ukwaleka kweTaC kudlala indima ebalulekileyo ekukhuseleni izinto ezahlukeneyo zereactor ngaphakathi kwimveliso yeGaN kunye neSiC. Izinto ezithile ezixhamlayo kolu kwaleka oluphambili ziquka ii-wafer carriers, ii-injectors, ii-susceptors, kunye nee-heaters. Kwi-SiC CVD reactors, izinto ezibalulekileyo ezifakwe iTantalum Carbide zibonisa uphuculo olukhulu lokusebenza. Olu kwaleka luphawuleka ngokuqina kwalo okugqithisileyo kunye nokuqhuba kwesinyithi. Lunika ukumelana okugqwesileyo kwi-halogen kunye nokugqwala kwehydrogen, okwenza ukuba lube lolona lufanelekileyo kwi-plasma enzima nakwiindawo ezishushu kakhulu.

Olu phawu lukwabonelela ngolawulo oluphezulu lobushushu, luphelisa ngempumelelo ubushushu kwaye luthintele ubushushu obuphezulu ngexesha leenkqubo zobushushu obuphezulu. Lukhusela izinto ezibalulekileyo zesithando kunye neereactor kumaqondo obushushu afikelela kwi-2200°C, lugcina uzinzo lweekhemikhali kunye noomatshini. I-Tantalum carbide inokumelana okunamandla kokugqwala kwii-asidi ezininzi kunye nee-alkalis, ithintela umonakalo we-substrate kwiindawo ezigqwalisayo. Lumelana ne-hydrogen, i-ammonia, i-monosilane, kunye ne-silicon, lubonelela ngokhuseleko kwiindawo ezinzima zeekhemikhali. Olu khuselo luphuculweyo lukhokelela kubomi obude bezinto. Uphahla lwe-TaC lukwaqhayisa ngobunyulu obuphezulu kakhulu, kunye namanqanaba okungcola ahlala engaphantsi kwe-5 ppm. Oku kunciphisa kakhulu iziphene ezifana nee-micropores kunye ne-etch pits kwiikristale ze-SiC, okuphucula umgangatho wekristale.

Ukufakwa kweTaC kwiigumbi zokuQokelela kunye nezixhobo zokucubungula iPlasma

I-TaC coating ibaluleke ngokulinganayo kwiigumbi zokutshiza kunye nezixhobo zokucubungula i-plasma. Ubulukhuni bayo obungaqhelekanga kunye nokungangeni kweekhemikhali kuxhathisa ukuguguleka kunye nokubola kwiindawo ze-plasma ezirhabaxa kunye neempendulo eziqatha zeekhemikhali. Oku kuqinisekisa ukuba izixhobo zihlala zisebenza phantsi kweemeko ezinzima. Ubunyulu obuphezulu kakhulu be-coating, kunye namanqanaba okungcola angaphantsi kwe-5 ppm, kunciphisa umngcipheko wokungcola kwiinkqubo zokukhula kwekristale.

Ukunamathela okuqinileyo kunye nokwanda okuphantsi kobushushu kuthintela ukuqhekeka okanye ukuqhekeka ngexesha lokujikeleza kobushushu. Oku kubalulekile ekugcineni ukuchaneka kunye nokuhambelana kokwenziwa kwe-semiconductor. Ekukhuleni kwe-epitaxial ye-GaN/SiC, ugqubuthelo luthintela ukusabela kwegesi kwaye lunciphisa iziphene, luphucula isivuno siphela. Izixhobo ezicocekileyo kakhulu kunye nogqubuthelo lwe-TaC oluhlala ixesha elide zinciphisa ukuveliswa kweesuntswana kunye nokuphuma kwegesi. Oku kunciphisa umngcipheko wongcoliseko lwe-wafer kunye neziphene. Ugqubuthelo oluqinileyo lubonelela ngokuxhathisa okugqwesileyo kukhukuliseko lwe-plasma kunye nohlaselo lweekhemikhali, okwandisa ubomi bokusebenza kwezixhobo.

Ukugquma i-TaC akuncedi nje kuphela; kubalulekile ekuvumeleni ukuveliswa kwezixhobo ze-GaN kunye ne-SiC okuthembekileyo, okusebenzayo kakhulu, nokungabizi kakhulu. Kunciphisa imingeni yongcoliseko kunye nokuwohloka okukhoyo kwiinkqubo zabo zokuvelisa. Indima yayo iya kukhula kuphela njengoko ezi teknoloji ziphambili ziqhubeka nophuhliso. Oku kuqinisekisa ubuchule obuqhubekayo kunye nokwanda kweemarike.

FAQ

Yintoni i-TaC coating?

I-TaC coating yi-layer ekhuselayo yeTantalum Carbide esetyenziswa kwiindawo zegrafiti. Abavelisi basebenzisa inkqubo yeChemical Vapor Deposition (CVD). Le compound yeseramikhi eqinileyo, enganyangekiyo iphucula uzinzo kunye nokumelana neekhemikhali kwizicelo ze-semiconductor.

I-TaC coating iyiphucula njani isivuno sokuvelisa?

I-TaC coating iqinisekisa iimeko zenkqubo ezihambelanayo. Ithintela ukubola kwezinto kunye nokungcola. Olu zinzo lunciphisa iziphene kunye nokwahluka kwiimpawu zesixhobo. Abavelisi bafumana inani eliphezulu lezixhobo ezisebenzayo zeGaN kunye neSiC nge-wafer nganye.

Kutheni le nto ukugqunywa kweTaC kukhethwa kuneSiC kwezinye izicelo?

I-TaC coating inika ukungangeni kakuhle kweekhemikhali kunye nokumelana nokugqwala xa kuthelekiswa ne-SiC coating. Imelana neendawo eziqinileyo zeekhemikhali kunye namaqondo obushushu aphezulu. Oku kuyenza ifaneleke ngakumbi kwiinkqubo ezithile ezifuna amandla kwimveliso yeGaN kunye neSiC.

Zeziphi izinto ezithile ezizuza kwi-TaC coating kwimveliso yeGaN/SiC?

Izixhobo ze-reactor ezifana nee-wafer carriers, ii-injectors, ii-susceptors, kunye nee-heaters zinceda kakhulu. Amagumbi okugrumba kunye nezixhobo zokucubungula i-plasma nazo zisebenzisa i-TaC coating. Ikhusela ezi ndawo kwiigesi ezirhabaxa, amaqondo obushushu aphezulu, kunye ne-plasma erhabaxa.

Thatha iNyathelo Elilandelayo

Ukulungele ukuzisa uzinzo olungazange lubonwe ngaphambili kunye nokuzinikela kwiinkqubo zakho ze-GaN kunye ne-SiC?

Nxibelelana neengcali zethu zesayensi yezinto ezibonakalayo namhlanjeukuxoxa ngendlela isisombululo se-TaC coating esinokuguqula ngayo ukusebenza kwe-MOCVD okanye i-CVD reactor yakho.