ʻO ka waʻa kristal Silicon Carbide Recrystallized no ka ʻoihana Semiconductor

ʻO ka waʻa kiʻi kiʻi kiʻi kiʻi kiʻi ʻoihana semiconductor

ʻO ka wehewehe pōkole:

ʻO VET Energy Recrystallized Silicon Carbide Crystal Boat kahi huahana hana kiʻekiʻe i hoʻolālā ʻia e hāʻawi i ka hana kūpaʻa a hilinaʻi hoʻi i kahi manawa lōʻihi. Loaʻa iā ia ke kūpaʻa wela maikaʻi loa a me ka like ʻana o ka wela, ka maʻemaʻe kiʻekiʻe, ka pale ʻana i ka erosion, e hana ana i ka hopena kūpono no nā noi hana wafer.

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Huahana Huahana

Nā waiwai o ka carbide silikona i hoʻopaʻa hou ʻia

ʻO ka carbide silicon recrystallized (R-SiC) he mea hana kiʻekiʻe me ka paʻakikī lua wale nō i ke daimana, i hana ʻia ma kahi wela kiʻekiʻe ma luna o 2000 ℃. Mālama ia i nā waiwai maikaʻi he nui o SiC, e like me ka ikaika wela kiʻekiʻe, ke kūpaʻa ʻana i ka corrosion ikaika, ke kūpaʻa oxidation maikaʻi loa, ke kūpaʻa haʻalulu maikaʻi a pēlā aku.

● ʻO nā mea mechanical maikaʻi loa. ʻO ka carbide silicon recrystallized he kiʻekiʻe aʻe ka ikaika a me ka ʻoʻoleʻa ma mua o ke kalapona kalapona, ke kūpaʻa hopena kiʻekiʻe, hiki ke pāʻani i ka hana maikaʻi i nā wahi wela wela, hiki ke pāʻani i ka hana counterbalance maikaʻi i nā ʻano kūlana. Eia kekahi, loaʻa iā ia ka maʻalahi maikaʻi a ʻaʻole maʻalahi i ka pōʻino e ka hoʻolōʻihi ʻana a me ke kulou ʻana, kahi e hoʻomaikaʻi nui ai i kāna hana.

● Kiʻekiʻe corrosion kū'ē. ʻO ka carbide silicon recrystallized he kiʻekiʻe ka corrosion kū'ē i nāʻano media likeʻole, hiki ke pale i ka erosion o nāʻano media corrosive, hiki ke mālama i kona mau mea mechanical no ka manawa lōʻihi, he paʻa ikaika, iʻoi aku ka lōʻihi o ke ola. Eia kekahi, loaʻa iā ia ka paʻa wela maikaʻi, hiki ke hoʻololi i kekahi ʻano o nā loli wela, hoʻomaikaʻi i kāna hopena noi.

● ʻAʻole e emi ka sintering. No ka emi ʻole o ke kaʻina hana sintering, ʻaʻohe koʻikoʻi koena e hoʻoneʻe i ka deformation a i ʻole ka haki ʻana o ka huahana, a hiki ke hoʻomākaukau ʻia nā ʻāpana me nā ʻano paʻakikī a me ka pololei kiʻekiʻe.

重结晶碳化硅物理特性 Nā waiwai kino o Recrystallized Silicon Carbide
性质 / Waiwai	典型数值 / Waiwai maʻamau
使用温度/ Mahana hana (°C)	1600°C (me ka oxygen), 1700°C (hoemi kaiapuni)
SiC含量/ maʻiʻo SiC	> 99.96%
自由Si含量/ Maikaʻi Si manuahi	< 0.1%
体积密度/ʻAno nui	2.60-2.70 g/cm³
气孔率/ ʻIke ʻia ka porosity	< 16%
抗压强度/ Ka ikaika hoʻoemi	> 600MPa
常温抗弯强度/Ka ikaika kulou anu	80-90 MPa (20°C)
高温抗弯强度Ka ikaika piko wela	90-100 MPa (1400°C)
热膨胀系数/ Hoʻonui wela @1500°C	4.70 10^-6/°C
导热系数/ʻO ka wela wela @1200°C	23W/m•K
杨氏模量/ Modulus elastic	240 GPa
抗热震性/ Ke pale ʻana i ka haʻalulu wela	Maikaʻi loa

ʻO VET Energy ka mea hana maoli o ka graphite a me nā huahana silicon carbide me ka uhi CVD, hiki ke hāʻawi i nā ʻāpana like ʻole no ka semiconductor a me ka ʻoihana photovoltaic. Hele mai kā mākou hui ʻenehana mai nā keʻena noiʻi kūloko kiʻekiʻe, hiki iā ia ke hāʻawi i nā hoʻonā ʻoihana ʻoihana hou aku no ʻoe.

Hoʻomohala mau mākou i nā kaʻina hana kiʻekiʻe e hāʻawi i nā mea ʻoi aku ka holomua, a ua hana mākou i kahi ʻenehana patented kūʻokoʻa, hiki ke hoʻoikaika i ka paʻa ʻana ma waena o ka uhi a me ka substrate a ʻoi aku ka liʻiliʻi o ka wehe.

Hoʻokipa maikaʻi iā ʻoe e kipa i kā mākou hale hana, e kūkākūkā hou kāua!