ʻO ka waʻa wafer Silicon Carbide i hoʻopili hou ʻia me ka uhi CVD

Wehewehe Pōkole:

ʻO ka VET Energy Recrystallized Silicon Carbide Wafer Boat kahi huahana hana kiʻekiʻe i hoʻolālā ʻia e hāʻawi i ka hana kūlike a hilinaʻi hoʻi i kahi manawa lōʻihi. Loaʻa iā ia ke kūpaʻa wela maikaʻi loa a me ke kūlike wela, ka maʻemaʻe kiʻekiʻe, ke kūpaʻa i ka ʻino, e lilo ia i hopena kūpono no nā noi hana wafer.


Nā kikoʻī huahana

Nā Lepili Huahana

Nā waiwai o ka carbide silicon i hoʻopili hou ʻia

ʻO ka silicon carbide i hoʻopili hou ʻia (R-SiC) kahi mea hana kiʻekiʻe me ka paʻakikī ʻelua wale nō i ka daimana, i hoʻokumu ʻia ma kahi mahana kiʻekiʻe ma luna o 2000 ℃. Mālama ia i nā waiwai maikaʻi loa o SiC, e like me ka ikaika wela kiʻekiʻe, ke kūpaʻa ikaika i ka pala, ke kūpaʻa oxidation maikaʻi loa, ke kūpaʻa haʻalulu wela maikaʻi a pēlā aku.

● Nā waiwai mechanical maikaʻi loa. ʻOi aku ka ikaika a me ke kūpaʻa o ka silicon carbide i hoʻopili hou ʻia ma mua o ke kalapona fiber, kū'ē i ka hopena kiʻekiʻe, hiki ke pāʻani i kahi hana maikaʻi i nā wahi mahana koʻikoʻi, hiki ke pāʻani i kahi hana counterbalance maikaʻi aʻe i nā kūlana like ʻole. Eia kekahi, he maʻalahi hoʻi kona a ʻaʻole maʻalahi e hōʻino ʻia e ke kīkoʻo ʻana a me ke kūlou ʻana, kahi e hoʻomaikaʻi nui ai i kāna hana.

● Ke kūpaʻa kiʻekiʻe i ka pala. Loaʻa i ka silicon carbide i hoʻopili hou ʻia ke kūpaʻa kiʻekiʻe i ka pala i nā ʻano media like ʻole, hiki ke pale i ka ʻino ʻana o nā ʻano media corrosive like ʻole, hiki ke mālama i kona mau waiwai mechanical no ka manawa lōʻihi, he pipili ikaika, no laila he ola lawelawe lōʻihi. Eia kekahi, he kūpaʻa maikaʻi hoʻi kona, hiki ke hoʻololi i kahi ākea o nā loli mahana, hoʻomaikaʻi i kāna hopena noi.

● ʻAʻole emi ka sintering. No ka mea, ʻaʻole emi ka hana sintering, ʻaʻohe koʻikoʻi koena e hoʻoulu ai i ka deformation a i ʻole ka haki ʻana o ka huahana, a hiki ke hoʻomākaukau ʻia nā ʻāpana me nā ʻano paʻakikī a me ke kiko kiʻekiʻe.

IMG_9497
IMG_9503

重结晶碳化硅物理特性

Nā waiwai kino o ka Silicon Carbide i hoʻopili hou ʻia

性质 / Waiwai

典型数值 / Waiwai Maʻamau

使用温度/ Mahana hana (°C)

1600°C (me ka oxygen), 1700°C (ka hoʻemi ʻana i ke kaiapuni)

SiC含量/ ʻIke SiC

> 99.96%

自由Si含量/ ʻIke manuahi Si

< 0.1%

体积密度/Ka nui o ka nui

2.60-2.70 g/cm3

气孔率/ Porosity ʻike ʻia

< 16%

抗压强度/ Ikaika kaomi

> 600MPa

常温抗弯强度/Ikaika kūlou anu

80-90 MPa (20°C)

高温抗弯强度Ikaika kūlou wela

90-100 MPa (1400°C)

热膨胀系数/ Hoʻonui wela @1500°C

4.70 10-6/°C

导热系数/Ka hoʻokele wela ma 1200°C

23W/m•K

杨氏模量/ Modulus elastic

240 GPa

抗热震性/ Ke kū'ē ʻana i ka haʻalulu wela

Maikaʻi loa

ʻO VET Energy kamea hana maoli o nā huahana graphite a me silicon carbide i hoʻopilikino ʻia me ka uhi ʻana o CVD,hiki ke hoʻolakonā ʻano like ʻolenā ʻāpana i hoʻopilikino ʻia no ka semiconductor a me ka ʻoihana photovoltaic. Ohele mai kā mākou hui loea mai nā ʻoihana noiʻi kūloko kiʻekiʻe, hiki ke hāʻawi i nā hoʻonā mea ʻoihana hou akunāu.

Hoʻomau mākou i ka hoʻomohala ʻana i nā kaʻina hana holomua e hoʻolako i nā mea holomua hou aʻe,a meua hana i kahi ʻenehana i hoʻopaʻa ʻia kū hoʻokahi, hiki ke hoʻopaʻa i ka pilina ma waena o ka uhi a me ka substrate a emi iki ka maʻalahi o ka hemo ʻana.

CVD SiC薄膜基本物理性能

Nā waiwai kino kumu o CVD SiCuhi ʻana

性质 / Waiwai

典型数值 / Waiwai Maʻamau

晶体结构 / ʻAno Crystal

Pae β FCC多晶,主要为(111)取向

密度 / Ka nui o ka paʻa

3.21 g/cm³

硬度 / Paʻakikī

2500 维氏硬度(500g load)

晶粒大小 / Ka nui o ka palaoa

2~10μm

纯度 / Maʻemaʻe Kemika

99.99995%

热容 / Ka Mana Wela

640 J·kg-1·K-1

升华温度 / Mahana Hoʻohaʻahaʻa

2700℃

抗弯强度 / Ikaika Flexural

415 MPa RT 4-kiko

杨氏模量 / Modulus o Young

430 Gpa 4pt kūlou, 1300 ℃

导热系数 / ThermalKa hoʻokele ʻana

300W·m-1·K-1

热膨胀系数 / Hoʻonui Wela (CTE)

4.5×10-6K-1

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