Isikebhe se-Silicon Carbide Crystal esakhiwe kabusha seMboni ye-Semiconductor

Izakhiwo ze-silicon carbide ephinde yasetshenziswa

I-silicon carbide ephinde yasetshenziswa (R-SiC) iyinto esebenza kahle kakhulu enobulukhuni obulandela idayimane kuphela, eyakhiwa ekushiseni okuphezulu okungaphezu kuka-2000℃. Igcina izakhiwo eziningi ezinhle kakhulu ze-SiC, njengamandla okushisa aphezulu, ukumelana nokugqwala okunamandla, ukumelana okuhle kwe-oxidation, ukumelana okuhle kokushaqeka kokushisa nokunye.

● Izakhiwo ezinhle kakhulu zemishini. I-silicon carbide ephinde yasetshenziswa inamandla nokuqina okuphezulu kune-carbon fiber, ukumelana okukhulu komthelela, ingadlala ukusebenza okuhle ezindaweni ezinokushisa okukhulu, ingadlala ukusebenza okungcono kokuphikisana ezimweni ezahlukahlukene. Ngaphezu kwalokho, futhi inokuguquguquka okuhle futhi ayonakaliswa kalula ngokwelula nokugoba, okuthuthukisa kakhulu ukusebenza kwayo.

● Ukumelana nokugqwala okuphezulu. I-silicon carbide ephinde yasetshenziswa inokumelana nokugqwala okuphezulu ezinhlobonhlobo zemidiya, ingavimbela ukuguguleka kwezinhlobonhlobo zemidiya egqwalisayo, ingagcina izakhiwo zayo zemishini isikhathi eside, inokunamathela okuqinile, ukuze ibe nokuphila isikhathi eside kwenkonzo. Ngaphezu kwalokho, futhi inokuqina okuhle kokushisa, ingazivumelanisa nobubanzi obuthile bezinguquko zokushisa, ithuthukise umphumela wayo wokusetshenziswa.

● Ukusinta akunciphi. Ngenxa yokuthi inqubo yokusinta ayinciphi, akukho ukucindezeleka okusele okuzobangela ukuguquka noma ukuqhekeka komkhiqizo, futhi izingxenye ezinezimo eziyinkimbinkimbi kanye nokunemba okuphezulu zingalungiswa.