ʻO ke apo pahu kila ʻulaʻula SiC kahi ʻāpana koʻikoʻi i hoʻohana ʻia i nā kaʻina hana semiconductor like ʻole. Hoʻohana mākou i kā mākou ʻenehana i hoʻopaʻa ʻia e hana i ka mea lawe silicon carbide me ka maʻemaʻe kiʻekiʻe loa, ka like ʻana o ka uhi maikaʻi a me ke ola lawelawe maikaʻi loa, a me ke kūpaʻa kemika kiʻekiʻe a me nā waiwai kūpaʻa wela.
ʻO VET Energy ka mea hana maoli o nā huahana graphite a me silicon carbide i hoʻopilikino ʻia me ka mālama ʻili e like me ka SiC coating, TaC coating, glassy carbon coating, pyrolytic carbon coating, a me nā mea ʻē aʻe, hiki ke hoʻolako i nā ʻāpana like ʻole no ka semiconductor a me ka ʻoihana photovoltaic.
Loaʻa kā mākou hui loea mai nā ʻoihana noiʻi kūloko kiʻekiʻe, hiki ke hāʻawi i nā hoʻonā mea ʻoihana hou aku nāu.
Ke hoʻomau nei mākou i ka hoʻomohala ʻana i nā kaʻina hana holomua e hoʻolako i nā mea holomua hou aʻe, a ua hana i kahi ʻenehana i hoʻopaʻa ʻia, hiki ke hoʻopaʻa i ka pilina ma waena o ka uhi a me ka substrate a emi iki ka maʻalahi o ka hemo ʻana.
Nā hiʻohiʻona o kā mākou huahana:
1. Ke kūpaʻa ʻana i ka oxidation wela kiʻekiʻe a hiki i ka 1700 ℃.
2. Maʻemaʻe kiʻekiʻe a me ke kūlike wela
3. Kū'ē maika'i loa i ka pala: waikawa, alkali, pa'akai a me nā mea hana olaola.
4. Paʻakikī kiʻekiʻe, ʻili paʻa, nā ʻāpana maikaʻi.
5. ʻOi aku ka lōʻihi o ke ola lawelawe a ʻoi aku ka paʻa
| CVD SiC薄膜基本物理性能 Nā waiwai kino kumu o CVD SiCuhi ʻana | |
| 性质 / Waiwai | 典型数值 / Waiwai Maʻamau |
| 晶体结构 / ʻAno Crystal | Pae FCC β多晶，主要为（111）取向 |
| 密度 / Ka nui o ka paʻa | 3.21 g/cm³ |
| 硬度 / Paʻakikī | 2500 维氏硬度（500g load） |
| 晶粒大小 / Ka nui o ka palaoa | 2~10μm |
| 纯度 / Maʻemaʻe Kemika | 99.99995% |
| 热容 / Ka Mana Wela | 640 J·kg-1·K-1 |
| 升华温度 / Mahana Hoʻohaʻahaʻa | 2700℃ |
| 抗弯强度 / Ikaika Flexural | 415 MPa RT 4-kiko |
| 杨氏模量 / Modulus o Young | 430 Gpa 4pt kūlou, 1300 ℃ |
| 导热系数 / ThermalKa hoʻokele ʻana | 300W·m-1·K-1 |
| 热膨胀系数 / Hoʻonui Wela (CTE) | 4.5×10-6K-1 |
Ke hoʻokipa maikaʻi nei iā ʻoe e kipa i kā mākou hale hana, e kūkākūkā hou aku kākou!
