Impeta y'ibikoresho bya Graphite ikozwe muri SiC

Ibisobanuro bigufi:

Impeta ya grafiti ikozwe muri VET Energy SiC ni igicuruzwa gifite imikorere myiza kandi cyizewe cyagenewe gutanga imikorere ihoraho kandi yizewe mu gihe kirekire. Ifite ubushobozi bwo kurwanya ubushyuhe n'ubushyuhe bungana, isuku cyane, irwanya isuri, bigatuma iba igisubizo cyiza cyo gutunganya wafer.

 


  • Aho yaturutse:Ubushinwa
  • Imiterere ya kristu:Icyiciro cya FCCβ
  • Ubucucike:3.21 g/cm;
  • Ubukomere:Vickers 2500;
  • Ubuziranenge bw'ibinyabutabire:99.99995%;
  • Ubushobozi bwo gushyuha:640J·kg-1·K-1;
  • Ubushyuhe bwo gushyushya:2700°C;
  • Ingano y'ibinyampeke:2 ~ 10μm;
  • Imbaraga z'umurava:415 Mpa (RT 4-Point);
  • Uburyo bwa Young:430 Gpa (4pt bend, 1300℃);
  • Kwaguka k'ubushyuhe (CTE):4.5 10-6K-1;
  • Ubushobozi bwo gutwara ubushyuhe:300(W/MK);
  • Ibisobanuro birambuye ku gicuruzwa

    Ibirango by'ibicuruzwa

    Impeta ya SiC Coated Graphite Gear ni igice cy'ingenzi gikoreshwa mu bikorwa bitandukanye byo gukora semiconductor. Dukoresha ikoranabuhanga ryacu rifite patenti kugira ngo dukore silicon carbide ifite ubuziranenge buhanitse cyane, ifite irangi ringana neza kandi ikora neza, ndetse ikaba ifite ubushobozi bwo kudakoresha imiti n'ubushyuhe bwinshi.

    VET Energy niyo sosiyete nyayo ikora ibikoresho bya grafiti na silicon carbide byihariye hamwe n’ibicuruzwa bisukura ubuso nka SiC coating, TaC coating, ikirahure cya karuboni, pyrolytic carbon coating, nibindi, ishobora gutanga ibice bitandukanye byihariye ku nganda za semiconductor na photovoltaic.

    Itsinda ryacu rya tekiniki rituruka mu bigo bikomeye by’ubushakashatsi mu gihugu, rishobora kuguha ibisubizo by’ibikoresho by’umwuga.

    Dukomeza guteza imbere inzira zigezweho kugira ngo dutange ibikoresho bigezweho, kandi twakoze ikoranabuhanga ryihariye rifite uburenganzira bwo gukora patenti, rishobora gutuma isano iri hagati y’igitambaro n’icyuma gifunga ibintu irushaho gukomera kandi ikagira ingaruka nke ku buryo bitavangwa.

    Ibiranga ibicuruzwa byacu:

    1. Ubudahangarwa ku bushyuhe bwinshi bwo kuzura kugeza kuri 1700°C.
    2. Ubuziranenge bwinshi n'ubushyuhe bungana
    3. Irwanya ingese neza cyane: aside, alkali, umunyu n'ibikomoka ku bimera.

    4. Ubukomere bwinshi, ubuso buto, uduce duto.
    5. Igihe kirekire cyo gukora kandi kiramba kurushaho

    CVD SiC薄膜基本物理性能

    Imiterere y'ibanze ya CVD SiCgusiga

    性质 / Umutungo

    典型数值 / Agaciro Gasanzwe

    晶体结构 / Imiterere ya kristu

    Icyiciro cya FCC β多晶,主要为(111 )取向

    密度 / Ubucucike

    3.21 g/cm³

    硬度 / Ubukomere

    2500 维氏硬度( 500g umutwaro)

    晶粒大小 / Ubunini bw'ibinyampeke

    2 ~ 10μm

    纯度 / Ubuziranenge bw'ibinyabutabire

    99.99995%

    热容 / Ubushobozi bwo gushyuha

    640 J·kg-1·K-1

    升华温度 / Ubushyuhe bwo gushyuha

    2700℃

    抗弯强度 / Imbaraga zo Kongera Uburemere

    415 MPa RT ifite amanota 4

    杨氏模量 / Modulus y'Abana

    430 Gpa 4pt bend, 1300℃

    导热系数 / ThermalUbushobozi bwo kuyobora

    300W·m-1·K-1

    热膨胀系数 / Kwagura ubushyuhe (CTE)

    4.5×10-6K-1

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    Turaguhaye ikaze mu gusura uruganda rwacu, reka tugire ibiganiro birambuye!

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