Mgbaaka Gear SiC Coated Graphite bụ isi ihe eji eme ihe n'ọtụtụ usoro mmepụta semiconductor. Anyị na-eji teknụzụ anyị nwere ikike iji mepụta ihe mkpuchi silicon carbide nke nwere ịdị ọcha dị elu, ịdị mma nke mkpuchi na ndụ ọrụ dị mma, yana nnukwu iguzogide kemịkalụ na ihe ndị na-eme ka okpomọkụ sie ike.
VET Energy bụ ezigbo onye na-emepụta ngwaahịa graphite na silicon carbide ahaziri ahazi yana ọgwụgwọ elu dị ka mkpuchi SiC, mkpuchi TaC, mkpuchi carbon iko, mkpuchi carbon pyrolytic, wdg, nwere ike inye akụkụ dị iche iche ahaziri ahazi maka ụlọ ọrụ semiconductor na photovoltaic.
Ndị otu teknụzụ anyị sitere na ụlọ ọrụ nyocha kacha elu n'ime obodo, ha nwere ike inye gị azịza ihe ọkachamara karịa.
Anyị na-emepụta usoro dị elu mgbe niile iji nye ihe ndị ka mma, anyị arụpụtakwala teknụzụ pụrụ iche nke nwere ikike pụrụ iche, nke nwere ike ime ka njikọ dị n'etiti mkpuchi ahụ na ihe mkpuchi ahụ sie ike ma ghara ịdị mfe iwepụ ya.
Atụmatụ nke ngwaahịa anyị:
1. Oke okpomọkụ na-eguzogide oxidation ruo 1700℃.
2. Ịdị ọcha dị elu na ịdị n'otu okpomọkụ
3. Ezigbo nguzogide nchara: acid, alkali, nnu na ihe ndị sitere n'okike.
4. Ike siri ike, elu dị obere, obere ihe.
5. Ndụ ọrụ dị ogologo ma na-adịgide adịgide karịa
| CVD SiC薄膜基本物理性能 Njirimara anụ ahụ bụ isi nke CVD SiCmkpuchi | |
| 性质 / Ihe onwunwe | 典型数值 / Uru nkịtị |
| 晶体结构 / Nhazi kristal | FCC β nkebi多晶，主要为（111) 取向 |
| 密度 / Njupụta | 3.21 g/cm³ |
| 硬度 / Ike siri ike | 2500 维氏硬度： (ibu 500g) |
| 晶粒大小 / SiZe ọka | 2 ~ 10μm |
| 纯度 / Ịdị ọcha nke kemịkalụ | 99.99995% |
| 热容 / Ike Okpomọkụ | 640 J·kg-1·K-1 |
| 升华温度 / Okpomọkụ Sublimation | 2700℃ |
| 抗弯强度 / Ike nke Flexural | 415 MPa RT isi ihe anọ |
| 杨氏模量 / Modulu Young | 430 GPA 4pt gbagọrọ agbagọ, 1300℃ |
| 导热系数 / ThermalNhazigharị | 300W·m-1·K-1 |
| 热膨胀系数 / Mgbasawanye Okpomọkụ (CTE) | 4.5 × 10-6K-1 |
Nabata gị nke ọma ka ị bịa leta ụlọ ọrụ mmepụta ihe anyị, ka anyị nwee mkparịta ụka ọzọ!
