SiC Coated Graphite Gear Ring

Tsananguro pfupi:

Mhete yegiya reVET Energy SiC yakaputirwa negraphite yakagadzirwa neVET Energy SiC ine simba guru uye inoshanda zvakanaka kwenguva yakareba. Inodzivirira kupisa zvakanaka uye yakafanana pakupisa, yakachena kwazvo, inodzivirira kukurwa kwevhu, zvichiita kuti ive mhinduro yakakwana yekugadzirisa wafer.

Nzvimbo Yekwakabva:China

Maumbirwo eKristaro:Chikamu cheFCCβ

Kuwanda:3.21 g/cm;

Kuoma:2500 Vickers;

Kuchena Kwemakemikari:99.99995%;

Kugona Kupisa:640J·kg-1·K-1;

Kupisa kweSublimation:2700℃;

Saizi yeZviyo:2~10μm;

Simba reFeleksiyumu:415 Mpa (RT 4-Point);

Modulus yeYoung:430 Gpa (4pt yakakombama, 1300℃);

Kuwedzera kweThermal (CTE):4.5 10-6K-1;

Kufambisa kwekupisa:300（W/MK）;

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Ruzivo rweChigadzirwa

Matagi eChigadzirwa

SiC Coated Graphite Gear Ring chinhu chakakosha chinoshandiswa mukugadzira ma semiconductor akasiyana-siyana. Tinoshandisa tekinoroji yedu ine patent kugadzira silicon carbide carrier ine kuchena kwakanyanya, kufanana kwakanaka kwe coating uye hupenyu hwakanaka hwebasa, pamwe nekudzivirira makemikari zvakanyanya uye hunhu hwekugadzikana kwekupisa.

VET Energy ndiyo kambani chaiyo inogadzira zvigadzirwa zve graphite ne silicon carbide zvakagadzirwa nepamusoro senge SiC coating, TaC coating, glassy carbon coating, pyrolytic carbon coating, nezvimwewo, inogona kupa zvikamu zvakasiyana-siyana zvakagadzirwa zve semiconductor ne photovoltaic industry.

Chikwata chedu chehunyanzvi chinobva kumasangano makuru ekutsvagisa emuno, chinogona kukupa mhinduro dzehunyanzvi.

Tinogara tichigadzira maitiro epamusoro-soro kuti tipe zvinhu zvepamusoro-soro, uye takagadzira tekinoroji yakasarudzika ine patent, iyo inogona kuita kuti kubatana pakati pe coating ne substrate kuve kwakasimba uye kusanyanya kupatsanurwa.

Zvimiro zvezvigadzirwa zvedu:

1. Kudzivirira kupisa kwakanyanya kusvika 1700℃.
2. Kuchena kwakanyanya uye kufanana kwekupisa
3. Kudzivirira ngura kwakanyanya: acid, alkali, munyu uye organic reagents.
4. Kuoma kwakanyanya, pamusoro pakaoma, zvidimbu zvitete.
5. Hupenyu hwebasa hwakareba uye hwakasimba

CVD SiC薄膜基本物理性能 Hunhu hweCVD SiCkuputira
性质 / Pfuma	典型数值 / Kukosha Kwakajairika
晶体结构 / Chimiro cheKristaro	Chikamu cheFCC β多晶，主要為（111）取向
密度 / Kuwanda kwehuwandu	3.21 g/cm³
硬度 / Kuomarara	2500 维氏硬度 (500g mutoro)
晶粒大小 / Saizi yeZviyo	2 ~ 10μm
纯度 / Kuchena kwemakemikari	99.99995%
热容 / Kugona Kupisa	640 J·kg^-1·K^-1
升华温度 / Kupisa kweSublimation	2700℃
抗弯强度 / Simba reKuchinjika	415 MPa RT ine mapoinzi mana
杨氏模量 / Modulus yeVadiki	430 Gpa 4pt bend, 1300℃
导热系数 / ThermalKufambisa kwemhepo	300W·m^-1·K^-1
热膨胀系数 / Kuwedzera kweThermal (CTE)	4.5×10^-6K^-1