Wehewehe Huahana
Hāʻawi kā mākou hui i nā lawelawe hana uhi SiC ma o ke ʻano CVD ma luna o ka graphite, keramika a me nā mea ʻē aʻe, i hiki ai i nā kinoea kūikawā e loaʻa ana ke kalapona a me ka silicon ke hana i ka mahana kiʻekiʻe e loaʻa ai nā molekala SiC maʻemaʻe kiʻekiʻe, nā molekala i waiho ʻia ma luna o ka ʻili o nā mea i uhi ʻia, e hana ana i ka papa pale SIC.
Nā hiʻohiʻona nui:
1. Ke kūpaʻa ʻana i ka oxidation wela kiʻekiʻe:
He maikaʻi loa nō ke kūpaʻa ʻana i ka oxidation ke kiʻekiʻe ka mahana i 1600 C.
2. Maʻemaʻe kiʻekiʻe: hana ʻia e ka waiho ʻana o ka mahu kemika ma lalo o ke kūlana chlorination wela kiʻekiʻe.
3. Ke kūpaʻa ʻana i ka ʻino: paʻakikī kiʻekiʻe, ʻili paʻa, nā ʻāpana maikaʻi.
4. Ke kūpaʻa ʻana i ka palaho: waikawa, alkali, paʻakai a me nā reagents organik.
Nā Kikoʻī Nui o ka Uhi ʻana o CVD-SIC
| Nā Waiwai SiC-CVD | ||
| ʻAno Crystal | Pae FCC β | |
| Ka nui o ka paʻa | g/cm³ | 3.21 |
| Paʻakikī | Paʻakikī Vickers | 2500 |
| Ka nui o ka palaoa | μm | 2~10 |
| Maʻemaʻe Kemika | % | 99.99995 |
| Ka Mana Wela | J·kg-1 ·K-1 | 640 |
| Mahana Sublimation | ℃ | 2700 |
| Ikaika Felexural | MPa (RT 4-kiko) | 415 |
| Modulus o Young | Gpa (4pt kūlou, 1300 ℃) | 430 |
| Hoʻonui Wela (CTE) | 10-6K-1 | 4.5 |
| Ka hoʻokele wela | (W/mK) | 300 |
