Lub cub tawg silicon carbide (SiC) siv lead ua kom loj hlob yog dab tsi?

SiCmuaj cov yam ntxwv ntawm bandgap loj, thermal conductivity siab, lub zog tawg tseem ceeb siab, thiab electron saturation drift rate siab. Nws tuaj yeem ua tau raws li qhov xav tau ntawm daim ntawv thov hauv qab qhov kub siab, siab siab, zaus siab, thiab lub zog siab. Nws tuaj yeem siv dav hauv cov tsheb fais fab tshiab, photovoltaics, kev tswj hwm kev lag luam, kev sib txuas lus xov tooj cua zaus thiab lwm yam teb. Nrog rau kev txhim kho sai ntawm cov lag luam cuam tshuam, kev lag luam semiconductor tiam peb uas sawv cev los ntawm silicon carbide tau coj cov cib fim tshiab.

Kev loj hlob ntawm cov siv lead ua yog qhov txuas tseem ceeb ntawm kev tsim cov khoom siv silicon carbide, thiab cov khoom siv tseem ceeb yog lub cub tawg loj hlob siv lead ua. Zoo ib yam li cov cub tawg siv lead ua silicon-qib ib txwm muaj, cov qauv cub tawg tsis nyuaj heev. Nws feem ntau yog tsim los ntawm lub cev cub tawg, lub tshuab cua sov, lub tshuab xa hluav taws xob, lub tshuab nqus tsev thiab ntsuas, lub tshuab roj, lub tshuab txias, lub tshuab tswj, thiab lwm yam. Lub tshav kub thiab cov txheej txheem txiav txim siab cov cim tseem ceeb ntawm qhov zoo ntawm cov siv lead ua silicon carbide, qhov loj me, kev coj ua thiab lwm yam cim tseem ceeb.

Ⅰ. Qhov nyuaj hauv kev siv tshuab silicon carbide crystal growth

Qhov kub ntawm silicon carbide siv lead ua kom loj hlob siab heev thiab tsis tuaj yeem saib xyuas tau, yog li qhov nyuaj tshaj plaws nyob rau hauv cov txheej txheem nws tus kheej:

(1)Qhov nyuaj hauv kev tswj hwm lub tshav kub: Kev saib xyuas qhov kaw qhov kub siab yog qhov nyuaj thiab tsis tuaj yeem tswj tau. Tsis zoo li cov khoom siv silicon-raws li cov kua-rub siv lead ua kom loj hlob, uas muaj qib siab ntawm kev ua haujlwm tsis siv neeg thiab cov txheej txheem loj hlob siv lead ua tuaj yeem pom, tswj thiab kho cov txheej txheem loj hlob siv lead ua, silicon carbide siv lead ua loj hlob hauv qhov chaw kaw hauv qhov chaw kub siab tshaj 2,000 ° C, thiab qhov kub loj hlob yuav tsum tau tswj hwm kom meej thaum lub sijhawm tsim khoom, uas ua rau kev tswj kub nyuaj;

(2)Qhov nyuaj hauv kev tswj cov qauv siv lead uaCov kav dej me me, cov polymorphic inclusions, dislocations thiab lwm yam tsis zoo feem ntau tshwm sim thaum lub sijhawm loj hlob, thiab lawv cuam tshuam thiab hloov zuj zus ib leeg. Cov kav dej me me (MP) yog cov tsis zoo los ntawm hom nrog qhov loj ntawm ntau microns txog kaum microns, uas yog qhov tsis zoo ntawm cov khoom siv. Silicon carbide ib leeg siv lead ua ke suav nrog ntau dua 200 daim ntawv siv lead ua ke sib txawv, tab sis tsuas yog ob peb lub qauv siv lead ua ke xwb (Hom 4H) yog cov ntaub ntawv semiconductor uas xav tau rau kev tsim khoom. Kev hloov pauv ntawm cov qauv siv lead ua feem ntau tshwm sim thaum lub sijhawm loj hlob, ua rau muaj cov teeb meem polymorphic. Yog li ntawd, nws yog qhov tsim nyog los tswj cov kev ntsuas xws li qhov sib piv ntawm silicon-carbon, qhov kub thiab txias ntawm kev loj hlob, qhov nrawm ntawm kev loj hlob ntawm cov siv lead ua, thiab qhov siab ntawm cov pa roj.

Tsis tas li ntawd xwb, muaj qhov kub thiab txias gradient hauv thaj chaw thermal ntawm silicon carbide ib leeg siv lead ua ke loj hlob, uas ua rau muaj kev ntxhov siab sab hauv thiab qhov tshwm sim dislocations (basal plane dislocation BPD, screw dislocation TSD, edge dislocation TED) thaum lub sijhawm loj hlob siv lead ua ke, yog li cuam tshuam rau qhov zoo thiab kev ua tau zoo ntawm epitaxy thiab cov khoom siv tom qab.

(3)Kev tswj hwm doping nyuaj: Kev qhia txog cov khoom tsis huv sab nraud yuav tsum tau tswj hwm nruj me ntsis kom tau txais cov siv lead ua ke nrog kev taw qhia doping;

(4)Kev loj hlob qeeb: Tus nqi loj hlob ntawm silicon carbide qeeb heev. Ib txwm muajcov ntaub ntawv silicontsuas yog xav tau 3 hnub kom loj hlob mus ua ib lub pas nrig siv lead ua, thaum cov pas nrig siv lead ua silicon carbide xav tau 7 hnub. Qhov no ua rau cov khoom tsim tau qis dua ntawm silicon carbide thiab cov zis tsawg heev.

Ntawm qhov tod tes, cov kev ntsuas ntawm silicon carbide epitaxial kev loj hlob yog qhov nyuaj heev, suav nrog qhov airtightness ntawm cov khoom siv, qhov ruaj khov ntawm cov roj siab hauv chav tshuaj tiv thaiv, kev tswj hwm qhov tseeb ntawm lub sijhawm qhia roj, qhov tseeb ntawm cov roj piv, thiab kev tswj hwm nruj ntawm qhov kub thiab txias. Tshwj xeeb, nrog rau kev txhim kho ntawm lub cuab yeej lub zog hluav taws xob, qhov nyuaj ntawm kev tswj hwm cov ntsiab lus tseem ceeb ntawm epitaxial wafer tau nce ntxiv ntau.

Ntxiv mus, nrog rau qhov nce ntawm qhov tuab ntawm cov txheej epitaxial, yuav ua li cas los tswj qhov sib xws ntawm qhov tsis kam thiab txo qhov tsis zoo thaum ua kom ntseeg tau tias qhov tuab tau dhau los ua lwm qhov kev sib tw loj. Hauv lub kaw lus tswj hwm hluav taws xob, nws yog qhov tsim nyog los koom ua ke cov sensors siab thiab cov actuators kom ntseeg tau tias ntau yam kev ntsuas tuaj yeem raug thiab ruaj khov. Tib lub sijhawm, qhov kev ua kom zoo dua ntawm cov txheej txheem tswj hwm kuj tseem ceeb heev. Nws yuav tsum muaj peev xwm kho qhov kev tswj hwm hauv lub sijhawm tiag tiag raws li cov teeb liab tawm tswv yim kom hloov kho rau ntau yam kev hloov pauv hauvkev loj hlob ntawm silicon carbide epitaxialtxheej txheem.

Ⅱ. Cov teeb meem tseem ceeb hauv kev tsim cov silicon carbide substrates:

1. Qhov kub ntawm kev loj hlob yog siab tshaj 2000 ℃, uas yog ob npaug ntawm qhov siab ntawm silicon.

2. Lub thickness ntawm cov pas nrig siv lead ua yog me me thaum lub sijhawm loj hlob ntawm cov siv lead ua, thiab 2cm silicon carbide siv lead ua pas nrig loj hlob hauv 7 hnub.

3. Cov kev xav tau ntawm cov hom siv lead ua yog siab, thiab tsuas muaj ob peb lub silicon carbide uas muaj cov qauv siv lead ua xwb.

4. Kev hnav khaub ncaws txiav siab heev, thiab silicon carbide muaj qhov nyuaj heev.

Hauv kev xaus, tus nqi sijhawm kim thiab cov txheej txheem ua tiav nyuaj txiav txim siab tus nqi siab ntawm silicon carbide substrates, uas txwv tsis pub siv silicon carbide.

III. Kev faib tawm ntawm cov cub tawg loj hlob siv lead ua

Raws li ntau txoj kev cua sov, cov cub tawg siv lead ua kom loj hlob tuaj yeem muab faib ua hom induction thiab hom tsis kam. Tam sim no, feem ntau ntawm cov khoom siv hauv khw yog hom induction, uas muaj qhov zoo ntawm tus nqi qis, cov qauv yooj yim, kev saib xyuas yooj yim thiab kev ua haujlwm thermal siab. Txawm li cas los xij, vim yog qhov cuam tshuam electromagnetic induction, qhov kub axial thiab radial ntawm induction cua sov yog txuas nrog, thiab nws tsis yooj yim sua kom coj mus rau hauv tus account ob qho tib si qhov ceev ntawm kev loj hlob siv lead ua thiab qhov zoo ntawm kev loj hlob siv lead ua.

Lub platform loj hlob thermal teb tiv taus tuaj yeem tswj tau qhov kub thiab txias axial thiab radial, uas yog qhov zoo rau kev loj hlob ntawm cov siv lead ua loj thiab txhim kho qhov nrawm ntawm kev loj hlob ntawm cov siv lead ua. Nws yog ib qho ntawm cov kev daws teeb meem rau yav tom ntej zoo 8-nti silicon carbide siv lead ua loj hlob.

Kev sib piv ntawm txoj kev induction thiab txoj kev tiv thaiv: