Iyini i-silicon carbide (SiC) crystal growth furnace?

I-SiCinezici ze-bandgap enkulu, ukuhanjiswa kokushisa okuphezulu, amandla ensimu okuqhekeka okubucayi okuphezulu, kanye nesilinganiso esiphakeme sokugeleza kwama-electron saturation. Ingahlangabezana nezidingo zohlelo lokusebenza ngaphansi kokushisa okuphezulu, ukucindezela okuphezulu, imvamisa ephezulu, kanye nezimo zamandla aphezulu. Ingasetshenziswa kabanzi ezimotweni zamandla amasha, ama-photovoltaics, ukulawulwa kwezimboni, ukuxhumana kwamaza omsakazo kanye neminye imikhakha. Ngokuthuthuka okusheshayo kwezimboni ezihlobene, imakethe ye-semiconductor yesizukulwane sesithathu emelelwa yi-silicon carbide ingenise amathuba amasha.

Ukukhula kwekristalu kuyisixhumanisi esiyinhloko sokukhiqizwa kwe-silicon carbide substrate, kanti imishini eyinhloko yi-crystal growth furnace. Njengezithando zendabuko ze-crystalline silicon-grade crystal growth furnace, isakhiwo se-furnace asiyinkimbinkimbi kakhulu. Sakhiwe kakhulu ngomzimba wesithando, uhlelo lokushisa, indlela yokudlulisa ikhoyili, uhlelo lokuthola i-vacuum kanye nokulinganisa, uhlelo lwendlela yegesi, uhlelo lokupholisa, uhlelo lokulawula, njll. Insimu yokushisa kanye nezimo zenqubo zinquma izinkomba ezibalulekile zekhwalithi ye-silicon carbide crystal, usayizi, ukuhanjiswa kwamandla kanye nezinye izinkomba ezibalulekile.

Ⅰ. Ubunzima kubuchwepheshe bokukhula kwekristalu ye-silicon carbide

Izinga lokushisa lokukhula kwekristalu ye-silicon carbide liphezulu kakhulu futhi alikwazi ukubhekwa, ngakho-ke ubunzima obukhulu busenqubo ngokwayo:

(1)Ubunzima ekulawuleni insimu yokushisa: Ukuqapha umgodi ovaliwe wokushisa okuphezulu kunzima futhi akulawuleki. Ngokungafani nemishini yokukhulisa ikristalu esuselwa kusisombululo esidonswa yi-silicon, enezinga eliphezulu lokuzenzakalela futhi inqubo yokukhula kwekristalu ingabonwa, ilawulwe futhi ilungiswe, amakristalu e-silicon carbide akhula endaweni evaliwe endaweni yokushisa okuphezulu ngaphezu kuka-2,000°C, futhi izinga lokushisa lokukhula lidinga ukulawulwa ngokunembile ngesikhathi sokukhiqizwa, okwenza ukulawula izinga lokushisa kube nzima;

(2)Ubunzima ekulawuleni isimo sekristalu: Ama-micropipe, ukufakwa kwe-polymorphic, ukuhlukana kanye nezinye iziphambeko zivame ukwenzeka ngesikhathi senqubo yokukhula, futhi ziyathintana futhi ziyashintshana. Ama-Micropipe (MP) angamaphutha angena ngohlobo oluphakathi anosayizi wama-micron amaningana kuya kwamashumi ama-micron, okuyiziphambeko ezinkulu zamadivayisi. Amakristalu e-silicon carbide single afaka izinhlobo zekristalu ezingaphezu kuka-200 ezahlukene, kodwa izakhiwo zekristalu ezimbalwa kuphela (Uhlobo lwe-4H) yizinto ze-semiconductor ezidingekayo ekukhiqizweni. Ukuguqulwa kwesimo sekristalu kuvame ukwenzeka ngesikhathi senqubo yokukhula, okuholela kumaphutha okufakwa kwe-polymorphic. Ngakho-ke, kuyadingeka ukulawula ngokunembile amapharamitha afana nesilinganiso se-silicon-carbon, i-gradient yokushisa kokukhula, izinga lokukhula kwekristalu, kanye nokucindezela kokugeleza kwegesi.

Ngaphezu kwalokho, kukhona ukuthambekela kokushisa ensimini yokushisa yokukhula kwekristalu elilodwa le-silicon carbide, okuholela ekucindezelekeni kwangaphakathi kwendabuko kanye nokuhlukana okubangelwayo (i-basal plane dislocation BPD, i-screw dislocation TSD, i-edge dislocation TED) ngesikhathi senqubo yokukhula kwekristalu, ngaleyo ndlela kuthinte ikhwalithi kanye nokusebenza kwe-epitaxy elandelayo namadivayisi.

(3)Ukulawula okunzima kokusebenzisa izidakamizwa: Ukungeniswa kokungcola kwangaphandle kumele kulawulwe ngokuqinile ukuze kutholakale ikristalu eqhubayo ene-doping eqondisayo;

(4)Izinga lokukhula elihamba kancane: Izinga lokukhula kwe-silicon carbide lihamba kancane kakhulu. Yendabukoizinto ze-siliconKudingeka izinsuku ezi-3 kuphela ukuze zikhule zibe yinduku yekristalu, kuyilapho izinduku zekristalu ze-silicon carbide zidinga izinsuku ezi-7. Lokhu kuholela ekusebenzeni kahle kokukhiqiza kwe-silicon carbide okuphansi ngokwemvelo kanye nomkhiqizo olinganiselwe kakhulu.

Ngakolunye uhlangothi, amapharamitha okukhula kwe-silicon carbide epitaxial adinga kakhulu, okuhlanganisa ukungabi nomoya kwemishini, ukuzinza kwengcindezi yegesi ekamelweni lokusabela, ukulawulwa okunembile kwesikhathi sokwethulwa kwegesi, ukunemba kwesilinganiso segesi, kanye nokuphathwa okuqinile kwezinga lokushisa lokufakwa. Ikakhulukazi, ngokuthuthukiswa kwezinga le-voltage yokumelana nedivayisi, ubunzima bokulawula amapharamitha ayinhloko e-epitaxial wafer bukhule kakhulu.

Ngaphezu kwalokho, ngokwanda kobukhulu bengqimba ye-epitaxial, indlela yokulawula ukufana kokumelana nokunciphisa ubuningi besici ngenkathi kuqinisekiswa ukujiya kube enye inselele enkulu. Ohlelweni lokulawula olusebenzisa ugesi, kuyadingeka ukuhlanganisa izinzwa ezinembile kakhulu nama-actuator ukuqinisekisa ukuthi amapharamitha ahlukahlukene angalawulwa ngokunembile nangokuzinzile. Ngesikhathi esifanayo, ukwenza ngcono i-algorithm yokulawula nakho kubalulekile. Kudingeka ikwazi ukulungisa isu lokulawula ngesikhathi sangempela ngokuya ngesignali yempendulo ukuze ivumelane nezinguquko ezahlukahlukene kuukukhula kwe-epitaxial ye-silicon carbideinqubo.

Ⅱ. Ubunzima obukhulu ekukhiqizweni kwe-silicon carbide substrates:

1. Izinga lokushisa lokukhula lingaphezu kuka-2000℃, okuphindwe kabili kunele-silicon.

2. Ubukhulu benduku yekristalu buncane ngesikhathi sokukhula kwekristalu, kanti induku yekristalu ye-silicon carbide engu-2cm ikhula ezinsukwini eziyi-7.

3. Izidingo zohlobo lwekristalu ziphakeme, futhi kunezimbalwa kuphela ze-silicon carbide ezinekristalu elilodwa ezinezakhiwo zekristalu.

4. Ukusika kukhulu kakhulu, futhi i-silicon carbide inobulukhuni obuphezulu kakhulu.

Ngamafuphi, izindleko zesikhathi ezibizayo kanye nobuchwepheshe bokucubungula obuyinkimbinkimbi bunquma izindleko eziphezulu ze-silicon carbide substrates, okunciphisa ukusetshenziswa kwe-silicon carbide.

III. Ukuhlukaniswa kwezithando zokukhula kwekristalu

Ngokwezindlela ezahlukene zokushisa, izitofu zokukhulisa ikristalu zingahlukaniswa ngohlobo lokungenisa kanye nohlobo lokumelana. Njengamanje, iningi lemishini emakethe uhlobo lokungenisa, olunezinzuzo zezindleko eziphansi, isakhiwo esilula, ukulungiswa okulula kanye nokusebenza kahle kokushisa okuphezulu. Kodwa-ke, ngenxa yomphumela wokungenisa i-electromagnetic, izinga lokushisa le-axial kanye nokushisa kwe-radial kokushisa kokungenisa kuhlanganisiwe, futhi akunakwenzeka ukucabangela kokubili ijubane lokukhula kwekristalu kanye nekhwalithi yokukhula kwekristalu.

Ipulatifomu yokukhula kwensimu yokushisa yokumelana ingalawula ngokunembile izinga lokushisa le-axial kanye nezinga lokushisa le-radial ngokulandelana, okukhuthaza ukukhula kwamakristalu amakhulu futhi kuthuthukise izinga lokukhula kwekristalu. Ingenye yezixazululo zokukhula kwekristalu ye-silicon carbide yekhwalithi ephezulu engu-8-intshi esikhathini esizayo.

Ukuqhathanisa phakathi kwendlela yokungenisa kanye nendlela yokumelana: