2 Ibisubizo by'igerageza n'ibiganiro
2.1Urugendo rwa Epitaxialubunini n'ubunini
Ubugari bw'urwego rwa Epitaxial, ubwinshi bw'ibinyobwa bivangwa n'imiti ikoreshwa mu gupima ubwiza ...nshi bw'ibinyobwa bivangwa n'imiti ikoreshwa mu gupima ubwinshi bw'ibinyobwa bivangwa n'imiti ikoreshwa mu gupima ubwinshi bw'ibinyobwaIbikoresho by'amashanyarazi bya SiC, n'ubugari bw'urwego rwa epitaxial hamwe n'ubunini bw'ibipimo bya doping nabyo ni ingenzi mu gupima ubushobozi bw'imikorere y'ibikoresho bya epitaxial.
Ishusho ya 3 igaragaza ubunini bungana n'umuvuduko w'ikwirakwizwa rya mm 150 na mm 200Udupaki twa SiC epitaxial. Bigaragara ku ishusho ko umuvuduko w'ubugari bw'urwego rwa epitaxial uhwanye n'igice cyo hagati cya wafer. Igihe cyo gukora epitaxial ni 600s, ubugari bw'urwego rwa epitaxial rwa wafer ya 150mm epitaxial ni 10.89 um, naho ubugari bungana ni 1.05%. Dukurikije uko byakozwe, igipimo cyo gukura kwa epitaxial ni 65.3 um/h, ari nacyo gipimo cyihuse cya epitaxial. Mu gihe kimwe cyo gukora epitaxial, ubugari bw'urwego rwa epitaxial rwa wafer ya 200 mm ni 10.10 um, ubugari bungana buri hagati ya 1.36%, kandi igipimo rusange cyo gukura ni 60.60 um/h, kiri munsi gato y'igipimo cyo gukura cya 150 mm epitaxial. Ibi biterwa nuko hari igihombo kigaragara mu nzira iyo isoko ya silikoni n'isoko ya karuboni biva hejuru y'icyumba cy'igerageza binyura hejuru y'icyumba cy'igerageza bikagera hasi y'icyumba cy'igerageza, kandi ubuso bwa mm 200 buruta mm 150. Gazi inyura hejuru y'icyumba cy'igerageza cya mm 200 mu ntera ndende, kandi gaze ikoreshwa mu nzira iba nyinshi. Iyo wafer ikomeje kuzenguruka, ubugari rusange bw'urwego rwa epitaxial buba buto, bityo umuvuduko wo gukura ugenda buhoro. Muri rusange, ubugari bwa mm 150 na mm 200 za epitaxial ni bwiza cyane, kandi ubushobozi bw'ibikoresho bushobora guhaza ibisabwa n'ibikoresho byiza.
2.2 Ingano n'ubunini bw'ikoreshwa ry'imiti mu gice cya Epitaxial
Ishusho ya 4 igaragaza uburinganire bw'ibipimo bya doping n'uburyo curve ikwirakwizwamo ya mm 150 na mm 200Udupaki twa SiC epitaxialNkuko bigaragara ku ishusho, umurongo ugaragaza aho umwuka ukwirakwira kuri wafer ya epitaxial ufite uburinganire bugaragara ugereranije n'aho hagati muri wafer. Uburemere bw'umuvuduko w'amazi mu gice cya mm 150 na mm 200 ni 2.80% na 2.66%, bushobora kugenzurwa muri 3%, ari nacyo gipimo cyiza cyane ku bikoresho mpuzamahanga bisa. Umurongo ugaragaza aho umwuka ukwirakwira mu gice cya epitaxial ukwirakwira mu ishusho ya "W" ku cyerekezo cy'umurambararo, ahanini ugenwa n'umurima w'itanura rishyushye ryo ku rukuta, kuko icyerekezo cy'umwuka mu itanura rikura ry'amazi mu gice cya epitaxial gituruka ku mpera y'umwuka yinjira (izamuka) kandi gisohoka mu mpera y'umugezi mu buryo bwa laminar unyuze ku buso bwa wafer; Kubera ko igipimo cyo "kugabanuka kw'isoko ya karuboni" (C2H4) "mu nzira" kiri hejuru y'icya silicon source (TCS), iyo wafer izenguruka, C/Si nyayo ku buso bwa wafer igabanuka buhoro buhoro kuva ku nkengero kugera hagati (isoko ya karuboni iri hagati ni nto), nk'uko "ihame ry'irushanwa" rya C na N ribivuga, igipimo cyo gukoresha doping hagati ya wafer kigabanuka buhoro buhoro kugera ku nkengero, kugira ngo haboneke ingano nziza y'ibipimo, impande ya N2 yongerwaho nk'ingurane mu gihe cyo gukora epitaxial kugira ngo igabanye igabanuka ry'ibipimo byo gukoresha doping kuva hagati kugera ku nkengero, kugira ngo urwego rwa nyuma rwo gukoresha doping rugaragaze ishusho ya "W".
2.3 Ubusembwa bw'urwego rwa Epitaxial
Uretse ubugari n'ubwinshi bw'ibiyobyabwenge mu gupima, urwego rw'igenzura ry'ubusembwa bwa epitaxial ni narwo rwego rw'ingenzi mu gupima ubwiza bwa wafers za epitaxial kandi ni ikimenyetso cy'ingenzi cy'ubushobozi bw'ibikoresho bya epitaxial. Nubwo SBD na MOSFET bifite ibisabwa bitandukanye ku busembwa, ubusembwa bugaragara cyane mu miterere y'ubuso nko kugabanuka kw'ibitonyanga, ubusembwa bwa triangle, ubusembwa bwa karoti, ubusembwa bwa comet, nibindi bisobanurwa nk'ubusembwa bwica ibikoresho bya SBD na MOSFET. Amahirwe yo kwangirika kw'udupira turimo ubusembwa ni menshi, bityo kugenzura umubare w'ubusembwa bwica ni ingenzi cyane mu kunoza umusaruro wa chip no kugabanya ikiguzi. Ishusho ya 5 igaragaza ikwirakwizwa ry'ubusembwa bwica bwa mm 150 na mm 200 SiC epitaxial wafers. Mu gihe nta busumbane bugaragara mu gipimo cya C/Si, ubusembwa bwa karoti n'ubusembwa bwa comet bushobora gukurwaho, mu gihe ubusembwa bw'ibitonyanga n'ubusembwa bwa triangle bifitanye isano no kugenzura isuku mu gihe cy'ikoreshwa ry'ibikoresho bya epitaxial, urwego rw'ubusembwa bw'ibice bya grafiti mu cyumba cy'isuzuma, n'ubwiza bwa substrate. Dukurikije Imbonerahamwe ya 2, bigaragara ko ubucucike bw'ibice bya epitaxial bya mm 150 na mm 200 bushobora kugenzurwa mu bice 0.3/cm2, bikaba ari urwego rwiza cyane ku bwoko bumwe bw'ibikoresho. Urwego rwo kugenzura ubucucike bw'ibice bya epitaxial bya mm 150 ruruta urwa epitaxial ya mm 200. Ibi biterwa nuko inzira yo gutegura substrate ya mm 150 ikuze kurusha iya mm 200, ubwiza bwa substrate ni bwiza, kandi urwego rwo kugenzura ubucakura bwa graphite ya mm 150 ni rwiza kurushaho.
2.4 Ubuso bw'ikirahure cya epitaxial wafer
Ishusho ya 6 igaragaza amashusho ya AFM y'ubuso bwa mm 150 na mm 200 za SiC epitaxial wafers. Bigaragara ku ishusho ko umuzi w'ubuso ufite uburebure bwa kare bwa Ra bwa mm 150 na mm 200 za epitaxial wafers ari 0.129 na 0.113 nm uko bikurikirana, kandi ubuso bw'urwego rwa epitaxial buriroshye nta kintu kigaragara cyo guteranya intambwe nini. Iki kintu kigaragaza ko gukura kw'urwego rwa epitaxial buri gihe bikomeza uburyo bwo gukura kw'intambwe mu gihe cyose cy'urugendo rwa epitaxial, kandi nta guteranya intambwe bibaho. Bigaragara ko hakoreshejwe inzira yo gukura ya epitaxial igezweho, urwego rworoshye rwa epitaxial rushobora kuboneka ku mpande zo hasi za mm 150 na mm 200.
3 Umwanzuro
Wafer za epitaxial za mm 150 na mm 200 4H-SiC zateguwe neza ku butaka bwo mu rugo hakoreshejwe ibikoresho byihariye byo gukuraho epitaxial bya mm 200 SiC, kandi inzira ya epitaxial ya epitaxial ikwiriye mm 150 na mm 200 yarakozwe. Igipimo cyo gukuraho epitaxial gishobora kuba kirenze 60 μm/h. Mu gihe cyujuje ibisabwa na epitaxy yihuta cyane, ubwiza bwa epitaxial wafer ni bwiza cyane. Ubunini bw'imirongo ya epitaxial ya mm 150 na mm 200 SiC bushobora kugenzurwa muri 1.5%, ubunini bw'imirongo buri munsi ya 3%, ubucucike bw'impinduka bushobora kwica buri munsi ya 0.3 particles / cm2, kandi ubuso bwa epitaxial burakomeye bw'umuzi wa kare Ra buri munsi ya 0.15 nm. Ibipimo by'ingenzi by'imirongo ya epitaxial biri ku rwego rwo hejuru mu nganda.
Isoko: Ibikoresho byihariye by'inganda z'ikoranabuhanga
Umwanditsi: Xie Tianle, Li Ping, Yang Yu, Gong Xiaoliang, Ba Sai, Chen Guoqin, Wan Shengqiang
(Ikigo cya 48 cy’Ubushakashatsi cya China Electronics Technology Group Corporation, Changsha, Hunan 410111)
Igihe cyo kohereza ubutumwa: Nzeri-04-2024