Urugendo rw'imikorere ya semiconductor

Ushobora kubyumva nubwo utarigeze wiga fiziki cyangwa imibare, ariko biroroshye cyane kandi birakwiriye abatangiye. Niba ushaka kumenya byinshi kuri CMOS, ugomba gusoma ibikubiye muri iki kinyamakuru, kuko nyuma yo gusobanukirwa inzira y'imikorere (ni ukuvuga inzira yo gukora diode) niho uzakomeza gusobanukirwa ibikubiye muri iki kinyamakuru. Noneho reka twige uburyo iyi CMOS ikorwa mu ruganda rukora ubwubatsi muri iki kinyamakuru (urugero, CMOS y'imikorere iteye imbere itandukanye mu miterere n'amahame yo gukora).

Mbere na mbere, ugomba kumenya ko uduce tw'ibumba duhabwa n'uruganda (agace k'icyuma ka silikoniumutanga) ni umwe umwe, ufite umurambararo wa mm 200 (Santimetero 8uruganda) cyangwa 300mm (Santimetero 12uruganda). Nkuko bigaragara ku ishusho iri hepfo, mu by'ukuri bisa n'umugati munini, twita substrate.

Ariko, ntabwo byoroshye kuri twe kubireba muri ubu buryo. Tureba uhereye hasi tujya hejuru tukareba ishusho y'igice, ikaba ishusho ikurikira.

Hanyuma, reka turebe uko moderi ya CMOS igaragara. Kubera ko inzira nyayo isaba intambwe ibihumbi, ndavuga ku ntambwe z'ingenzi za wafer yoroshye ya santimetero 8 hano.

 

 

Gukora Icyuma n'Urutonde rw'Ihindagurika:

Ni ukuvuga ko icyobo gishyirwa mu gice cy’ubutaka hakoreshejwe uburyo bwa ion (Ion Implantation, ubu buryo bwitwa imp). Niba ushaka gukora NMOS, ugomba gushyiramo ibyobo bya P-type. Niba ushaka gukora PMOS, ugomba gushyiramo ibyobo bya N-type. Kugira ngo bikunogere, reka dufate urugero rwa NMOS. Imashini ishyiramo ion ishyiramo ibintu bya P-type bigomba gushyirwa mu gice cy’ubutaka ku buryo burambuye, hanyuma ikabishyushya ku bushyuhe bwinshi mu mwobo w’itanura kugira ngo ikoreshe izi ion kandi zikazikwirakwiza hirya no hino. Ibi bisoza umusaruro w’icyo cyobo. Uku niko bigaragara nyuma y’uko umusaruro urangiye.

Nyuma yo gukora ikiraro, hari izindi ntambwe zo gutera iyoni, intego yazo ikaba ari ukugenzura ingano y'umuyoboro w'amashanyarazi n'umuvuduko w'amashanyarazi. Buri wese ashobora kuyita urwego rwo guhindura. Niba ushaka gukora NMOS, urwego rwo guhindura rushyirwamo iyoni zo mu bwoko bwa P, kandi niba ushaka gukora PMOS, urwego rwo guhindura rushyirwamo iyoni zo mu bwoko bwa N. Nyuma yo gutera, ni icyitegererezo gikurikira.

Hari byinshi birimo hano, nk'ingufu, inguni, ubwinshi bwa iyoni mu gihe cyo gutera iyoni, nibindi, bitagaragara muri iki kinyamakuru, kandi ndizera ko niba uzi ibyo bintu, ugomba kuba uri umuntu wiyumvamo, kandi ugomba kuba ufite uburyo bwo kubyiga.

 

Gukora SiO2:

Diyokiside ya silikoni (SiO2, izwi hano nyuma nka okiside) izakorwa nyuma. Mu gikorwa cyo gukora CMOS, hari uburyo bwinshi bwo gukora okiside. Aha, SiO2 ikoreshwa munsi y'irembo, kandi ubugari bwayo bugira ingaruka zitaziguye ku bunini bwa voltage y'umupaka n'ingano y'umuyoboro w'amazi. Kubwibyo, abakora uruganda benshi bahitamo uburyo bwo gukoresha okiside y'umuyoboro w'itanura bufite ubuziranenge bwo hejuru, kugenzura ubunini neza, no guhuza neza muri iyi ntambwe. Mu by'ukuri, biroroshye cyane, ni ukuvuga ko mu muyoboro w'itanura ufite ogisijeni, ubushyuhe bwinshi bukoreshwa kugira ngo ogisijeni na silikoni bikorane na shimi kugira ngo bikore SiO2. Muri ubu buryo, urwego ruto rwa SiO2 rukorwa ku buso bwa Si, nk'uko bigaragara ku ishusho iri hepfo.

Birumvikana ko hari n'amakuru menshi yihariye hano, nko kumenya umubare w'ingero z'ibipimo bikenewe, ingano y'umwuka wa ogisijeni ukenewe, igihe ubushyuhe bwinshi bukenewe, n'ibindi. Ibi si byo turimo gusuzuma ubu, ibyo ni ibintu birambuye cyane.

Imiterere ya gate end Poly:

Ariko ntibirarangira. SiO2 ingana n'umugozi, kandi irembo nyaryo (Poly) ntiriratangira. Intambwe ikurikiraho rero ni ugushyira urwego rwa polysilicon kuri SiO2 (polysilicon nayo igizwe n'ikintu kimwe cya silikoni, ariko imiterere ya lattice itandukanye. Ntumbaze impamvu substrate ikoresha silikoni imwe ya kristalo kandi irembo rigakoresha polysilicon. Hari igitabo cyitwa Semiconductor Physics. Ushobora kubyiga. Birateye isoni ~). Poly nayo ni isano ikomeye cyane muri CMOS, ariko igice cya poly ni Si, kandi ntigishobora gukorwa no gukorana na substrate ya Si nk'uko SiO2 ikura. Ibi bisaba CVD izwi cyane (Chemical Vapor Deposition), ariyo ikora mu buryo bwa shimi mu cyuma gishyushye no gutera ikintu cyakozwe kuri wafer. Muri uru rugero, ikintu cyakozwe ni polysilicon, hanyuma kigateranywa kuri wafer (aha ngomba kuvuga ko poly ikorwa mu muyoboro w'itanura na CVD, bityo gukora poly ntibikorwa n'imashini ya CVD isanzwe).

Ariko polysilicone ikorwa n'ubu buryo izashyirwa ku gipfunyika cyose, kandi bizamera gutya nyuma y'imvura.

 

Kugaragara kwa Poly na SiO2:

Kuri iyi ntambwe, imiterere ihagaze twifuza yarakozwe, ifite poly hejuru, SiO2 hepfo, n'igice cy'amazi kiri hepfo. Ariko ubu wafer yose imeze gutya, kandi dukeneye gusa umwanya wihariye kugira ngo ibe imiterere ya "robine". Rero hari intambwe y'ingenzi cyane muri gahunda yose - kwigaragaza.
Tubanza gushyira urwego rwa photoresist ku buso bwa wafer, maze biba gutya.

Hanyuma shyiramo agapfukamunwa kagenwe (imiterere y'uruziga rwagenwe kuri agapfukamunwa), hanyuma ukahashyira urumuri rw'uburebure runaka. Agapfukamunwa kazatangira gukoreshwa mu gace kagejejweho imirasire. Kubera ko agace kafunzwe na gapfukamunwa kadashyirwamo urumuri, aka gace ka gapfukamunwa katarashyirwamo imirasire.

Kubera ko icyuma gikingira ubushyuhe (photoresist) cyoroshye cyane gukaraba n'amazi runaka ya shimi, mu gihe icyuma gikingira ubushyuhe kitakaraba kidashobora gukaraba, nyuma yo kuhagera, hakoreshwa amazi runaka kugira ngo hakaraba icyuma gikingira ubushyuhe, amaherezo biba bimeze gutya, bigasiga icyuma gikingira ubushyuhe aho Poly na SiO2 bigomba kubikwa, hanyuma kigakuraho icyuma gikingira ubushyuhe aho kidakeneye kubikwa.