Ukuhamba kwenkqubo ye-semiconductor

Unokuyiqonda nokuba awuzange ufunde i-physics okanye imathematika, kodwa ilula kakhulu kwaye ilungele abaqalayo. Ukuba ufuna ukwazi ngakumbi malunga ne-CMOS, kufuneka ufunde umxholo walo mbandela, kuba kuphela emva kokuqonda ukuhamba kwenkqubo (oko kukuthi, inkqubo yokuvelisa i-diode) unokuqhubeka nokuqonda umxholo olandelayo. Emva koko makhe sifunde malunga nendlela le CMOS eveliswa ngayo kwinkampani esisiseko kulo mbandela (ukuthatha inkqubo engekho phambili njengomzekelo, i-CMOS yenkqubo ephuculweyo iyahluka kwisakhiwo kunye nomgaqo wokuvelisa).

Okokuqala, kufuneka wazi ukuba ii-wafers ezifunyanwa yi-Foundry kumthengisi (ilitye le-siliconumthengisi) nganye nganye, kunye neradius ye-200mm (8-intshiumzimveliso) okanye 300mm (12-intshiumzi-mveliso). Njengoko kuboniswe kumzobo ongezantsi, ngokwenene kufana nekhekhe elikhulu, esiyibiza ngokuba yi-substrate.

Noko ke, akulunganga ukuba siyijonge ngolu hlobo. Sibheka ukusuka ezantsi ukuya phezulu kwaye sijonge kwi-cross-sectional view, eba ngumfanekiso olandelayo.

Okulandelayo, makhe sibone ukuba imodeli yeCMOS ivela njani. Kuba eyona nkqubo ifuna amawaka amanyathelo, ndiza kuthetha ngamanyathelo aphambili esona siluphu silu-8-intshi apha.

 

 

Ukwenza kakuhle kunye noMaleko wokuguqula:

Oko kukuthi, iqula lifakwe kwi-substrate ngokufakelwa kwe-ion (Ukufakelwa kwe-Ion, emva koku kubhekiselwa kuyo njenge-imp). Ukuba ufuna ukwenza i-NMOS, kufuneka ufakele uhlobo lwe-P lwamaqula. Ukuba ufuna ukwenza i-PMOS, kufuneka ufakele amaqula odidi lwe-N. Ukukwenzela lula, makhe sithathe i-NMOS njengomzekelo. Umatshini wokufakelwa kwe-ion ufaka izinto zohlobo lwe-P ukuba zifakwe kwi-substrate kubunzulu obuthile, kwaye emva koko uzifudumeze kubushushu obuphezulu kwityhubhu yesithando somlilo ukuze zisebenze ezi ion kwaye zisasazeke ngeenxa zonke. Oku kugqiba ukuveliswa kwequla. Yiloo nto ekhangeleka ngayo emva kokuba imveliso igqityiwe.

Emva kokwenza iqula, kukho amanye amanyathelo okufakelwa kwe-ion, injongo yokulawula ubungakanani bomjelo wangoku kunye ne-voltage threshold. Wonke umntu unokuwubiza ngokuba luluhlu lwe-inversion. Ukuba ufuna ukwenza i-NMOS, i-inversion layer ifakwe nge-P-type ions, kwaye ukuba ufuna ukwenza i-PMOS, i-inversion layer ifakwe nge-N-type ions. Emva kokufakelwa, yimodeli elandelayo.

Kukho imixholo emininzi apha, njengamandla, i-angle, i-ion concentration ngexesha lokufakelwa kwe-ion, njl., ezingabandakanywanga kulo mbandela, kwaye ndiyakholelwa ukuba ukuba uyazazi ezo zinto, kufuneka ube ngumntu wangaphakathi, kwaye kufuneka ube nendlela yokufunda.

 

Ukwenza iSiO2:

I-silicon dioksidi (i-SiO2, emva koku kubhekiselwa kuyo njenge-oxide) iya kwenziwa kamva. Kwinkqubo yokuvelisa i-CMOS, zininzi iindlela zokwenza i-oxide. Apha, i-SiO2 isetyenziswe phantsi kwesango, kwaye ubukhulu bayo buchaphazela ngokuthe ngqo ubukhulu be-voltage ye-threshold kunye nobukhulu besiteshi sangoku. Ke ngoko, uninzi lwabaseki bakhetha indlela yetyhubhu ye-oxidation ye-furnace enomgangatho ophezulu, olona lawulo luchanekileyo lokutyeba, kunye neyona nto ifanayo kweli nyathelo. Enyanisweni, ilula kakhulu, oko kukuthi, kwi-tube yesithando somlilo kunye ne-oksijeni, ukushisa okuphezulu kusetyenziselwa ukuvumela i-oksijini kunye ne-silicon ukuba iphendule ngamakhemikhali ukuvelisa i-SiO2. Ngale ndlela, umaleko omncinci we-SiO2 uveliswa kumphezulu we-Si, njengoko kuboniswe kumzobo ongezantsi.

Ngokuqinisekileyo, kukho ulwazi oluninzi olucacileyo apha, njengokuba zingaphi iidigri ezifunekayo, ingakanani i-oksijini efunekayo, ixesha elingakanani izinga lokushisa elifunekayo, njl. Ezi aziyiyo into esiyiqwalaselayo ngoku, ezo zichanekileyo kakhulu.

Ukwenziwa kwesango lokuphela kwePoly:

Kodwa ayikapheli. I-SiO2 ilingana nje nomtya, kwaye isango lokwenyani (i-Poly) alikaqalisi okwangoku. Ngoko inyathelo lethu elilandelayo kukubeka umaleko we-polysilicon kwi-SiO2 (i-polysilicon nayo yenziwe yinto enye ye-silicon, kodwa ilungiselelo le-lattice lihlukile. Ungandibuzi ukuba kutheni i-substrate isebenzisa i-crystal silicon enye kwaye isango lisebenzisa i-polysilicon. Kukho incwadi ebizwa ngokuba yi-Semiconductor Physics. Unokufunda malunga nayo. Ihlazo ~). I-Poly ikwalikhonkco elibaluleke kakhulu kwi-CMOS, kodwa icandelo lepoly yiSi, kwaye ayinakuveliswa ngokusabela ngokuthe ngqo kunye ne-Si substrate njengokukhula kweSiO2. Oku kufuna i-CVD yasentsomini (i-Chemical Vapor Deposition), ethi isebenze ngekhemikhali kwindawo efunxayo kwaye icokiseke into eyenziweyo kwi-wafer. Kulo mzekelo, into eyenziwa yi-polysilicon, kwaye emva koko i-precipitated kwi-wafer (apha ndimele nditsho ukuba i-poly yenziwe kwi-tube yesithando somlilo nge-CVD, ngoko ke ukuveliswa kwepoly akwenziwa ngumatshini we-CVD ococekileyo).

Kodwa i-polysilicon eyenziwe yile ndlela iya kunqunyulwa kuyo yonke i-wafer, kwaye ibonakala ngolu hlobo emva kwemvula.

 

Ukuvezwa kwePoly kunye ne-SiO2:

Kweli nqanaba, ulwakhiwo oluthe nkqo esilufunayo lwenziwe ngokwenene, kunye nepoly phezulu, iSiO2 ezantsi, kunye ne-substrate ezantsi. Kodwa ngoku i-wafer yonke inje, kwaye sifuna kuphela indawo ethile ukuze sibe "i-faucet" isakhiwo. Ngoko ke kukho elona nyathelo libalulekileyo kuyo yonke le nkqubo - ukuba sesichengeni.
Okokuqala sisasaza umaleko we-photoresist kumphezulu we-wafer, kwaye iba ngolu hlobo.

Emva koko faka imaski echaziweyo (ipateni yesekethe ichazwe kwimaski) kuyo, kwaye ekugqibeleni uyikhanyise ngokukhanya kobude obuthile. Ifotoresist iya kwenziwa isebenze kwindawo ene-irradiated. Ekubeni indawo evaliweyo yimaski ayikhanyiswa ngumthombo wokukhanya, le nxalenye ye-photoresist ayisebenzi.

Ekubeni i-photoresist esebenzayo ilula kakhulu ukuba ihlanjwe ngulwelo oluthile lwekhemikhali, ngelixa i-photoresist engasebenziyo ayikwazi ukuhlanjwa, emva kwe-irradiation, i-liquid ethile isetyenziselwa ukuhlamba i-photoresist esebenzayo, kwaye ekugqibeleni iba ngolu hlobo, ishiya i-photoresist apho i-Poly kunye ne-SiO2 kufuneka igcinwe, kwaye isuse i-photoresist apho ingagcinwa khona.