SiC Coated Graphite Carriers，sic coating, SiC coating yakafukidzwa neGraphite substrate yeSemiconductor

Silicon carbide yakafukidzwaDiski yegrafiti inogadzirira silicon carbide protective layer pamusoro pegraphite nekuisirwa kwemhepo kana kemikari uye kupfapfaidza. Silicon carbide protective layer yakagadzirwa inogona kubatanidzwa zvakasimba negraphite matrix, zvichiita kuti pamusoro pegraphite base pave ne greasy uye isina voids, zvichipa graphite matrix zvinhu zvakakosha, zvinosanganisira oxidation resistance, acid ne alkali resistance, erosion resistance, corrosion resistance, nezvimwewo. Parizvino, Gan coating ndeimwe yezvikamu zvakanakisa zvekukura kwesilicon carbide mu epitaxial.

Silicon carbide semiconductor ndiyo chinhu chikuru che semiconductor itsva yakagadzirwa ne wide band gap. Midziyo yayo ine hunhu hwekudzivirira kupisa kwakanyanya, kudzivirira magetsi akawanda, frequency yakawanda, simba rakawanda uye resistance yemwaranzi. Ine mabhenefiti ekukurumidza kushandura uye kushanda zvakanaka. Inogona kuderedza zvakanyanya kushandiswa kwesimba rechigadzirwa, kuvandudza kushanda kwesimba rekushandura uye kuderedza huwandu hwechigadzirwa. Inonyanya kushandiswa mukukurukurirana kwe5g, kudzivirira kwenyika neindasitiri yemauto. RF field inomiririrwa nendege uye simba remagetsi rinomiririrwa nemotokari itsva dzesimba uye "zvivakwa zvitsva" zvine mikana yakajeka uye yakakura yemusika muminda yehurumende neyemauto.

Silicon carbide substrate ndiyo chinhu chikuru che semiconductor itsva yakagadzirwa ne wide band gap. Silicon carbide substrate inonyanya kushandiswa mu microwave electronics, power electronics nedzimwe nzvimbo.. Iri pamberi pecheni yeindasitiri ye semiconductor ine band gap yakakura uye ndiyo chinhu chepakutanga uye chakakosha. Silicon carbide substrate inogona kukamurwa kuita mhando mbiri: semi insulation uye conductive. Pakati padzo, semi insulation silicon carbide substrate ine high resistivity (resistivity ≥ 105 Ω· cm). Semi insulation substrate yakasanganiswa ne heterogeneous gallium nitride epitaxial sheet inogona kushandiswa sezvinhu zveRF devices, iyo inonyanya kushandiswa mu 5g communication, kudzivirira kwenyika uye indasitiri yemauto muzviitiko zvataurwa pamusoro apa; Imwe i conductive silicon carbide substrate ine low resistivity (resistivity range i15 ~ 30m Ω· cm). Homogeneous epitaxy ye conductive silicon carbide substrate uye silicon carbide inogona kushandiswa sezvinhu zvemagetsi devices. Zviitiko zvikuru zvekushandisa imota dzemagetsi, masisitimu emagetsi nedzimwe nzvimbo.