Izingxenye zeSemiconductor ezishibhile ezishibhile eziphezulu ezihlanzekile zeGraphite Semiconductor 
| Isicelo: | Izingxenye zeSemiconductor |
| Ukumelana (μΩ.m): | 8-10 ohm |
| I-Porosity (%): | 12% Max |
| Indawo Yomsuka: | I-Zhejiang, China |
| Ubukhulu | Ngokwezifiso |
| Zuza usayizi: | <=325mesh |
| Isitifiketi: | ISO9001:2015 |
| Usayizi Nomumo: | Ngokwezifiso |
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