I-SiC Coating/Coated Graphite Substrate/Tray ye-Semiconductor

Incazelo emfushane:

I-VET Energy SiC Coated Graphite Susceptor ye-Epitaxial Growth iwumkhiqizo osebenza kahle kakhulu owenzelwe ukunikeza ukusebenza okulinganayo nokuthembekile isikhathi eside. Inokumelana okuhle kakhulu nokushisa kanye nokufana kokushisa, ubumsulwa obuphezulu, ukumelana nokuguguleka, okwenza kube yisisombululo esifanele sezinhlelo zokusebenza zokucubungula i-wafer.

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Imininingwane Yomkhiqizo

Amathegi Omkhiqizo

I-SiC coating/coated ye-Graphite susceptor ye-Semiconductor

II-SiC Coated Graphite Substrateiyisisombululo esiqinile kakhulu nesisebenza kahle esenzelwe ukuhlangabezana nezidingo ezinzima zemboni yokucubungula ama-semiconductor. Iqukethe ungqimba lokuhlanzeka okuphezuluukugqoka kwe-silicon carbide (SiC), le substrate inikeza ukuzinza kokushisa okumangalisayo, ukumelana nokushiswa kwe-oxidation, kanye nokuphila isikhathi eside kwenkonzo, okwenza kube kuhle kakhulu ekusetshenzisweni kwezinqubo ze-MOCVD, abathwali be-graphite wafer, kanye nezinye izindawo zokushisa okuphezulu.

Izici:
· Ukumelana Okuhle Kakhulu Nokushisa Okushisayo
· Ukumelana Okuhle Kakhulu Nokwethuka Komzimba
· Ukumelana Okuhle Kakhulu Kwamakhemikhali
· Ukuhlanzeka Okuphezulu Kakhulu
· Ukutholakala ngesimo esiyinkimbinkimbi
·Ingasetshenziswa ngaphansi kwe-Oxidizing Atmosphere

Isicelo:

Izici Zomkhiqizo Nezinzuzo:

1. Ukumelana Okuphezulu Kokushisa:Ngobumsulwa obuphezuluUkugqoka kwe-SiC, i-substrate imelana namazinga okushisa aphezulu, iqinisekisa ukusebenza okuqhubekayo ezindaweni ezidinga kakhulu njengokwenziwa kwe-epitaxy kanye ne-semiconductor.

2. Ukuqina Okuthuthukisiwe:Izingxenye ze-graphite ezimbozwe yi-SiC zenzelwe ukumelana nokugqwala kwamakhemikhali kanye nokushiswa yi-oxidation, okwandisa isikhathi sokuphila kwe-substrate uma kuqhathaniswa ne-substrates ezijwayelekile ze-graphite.

3. I-Graphite Embozwe Nge-Vitreous:Isakhiwo esiyingqayizivele se-vitreous se-Ukugqoka kwe-SiCinikeza ubulukhuni bomphezulu obuhle kakhulu, kunciphisa ukuguguleka nokuklebhuka ngesikhathi sokucubungula izinga lokushisa eliphezulu.

4. Ukugqoka kwe-SiC okuhlanzekile okuphezulu:I-substrate yethu iqinisekisa ukungcola okuncane ezinqubweni ze-semiconductor ezizwelayo, okunikeza ukuthembeka kwezimboni ezidinga ubumsulwa bezinto eziqinile.

5. Isicelo Semakethe Ebanzi:IIsivikelo se-graphite esimbozwe yi-SiCImakethe iyaqhubeka nokukhula njengoba isidingo semikhiqizo ehlanganisiwe ye-SiC ethuthukisiwe ekukhiqizweni kwe-semiconductor sikhula, okubeka lesi sisekelo njengomdlali obalulekile emakethe ye-graphite wafer carrier kanye nemakethe yamathreyi e-graphite ahlanganiswe ne-silicon carbide.

Izakhiwo Ezijwayelekile Zezinto Eziyisisekelo Ze-Graphite:

Ubuningi Obubonakalayo:	1.85 g/cm3
Ukumelana Nogesi:	11 μΩm
Amandla Okuguquguquka:	49 MPa (500kgf/cm2)
Ukuqina Kogu:	58
Umlotha:	<5ppm
Ukuqhuba Ukushisa:	116 W/mK (100 kcal/mhr-℃)

I-CVD SiC薄膜基本物理性能 Izakhiwo eziyisisekelo zomzimba ze-CVD SiCukugqoka
性质 / Isakhiwo	典型数值 / Inani Elijwayelekile
晶体结构 / Crystal Structure	I-FCC β phase 多晶，主要為(111）取向)
密度 / Ukuminyana	3.21 g/cm³
硬度 / Ukuqina	2500 维氏硬度 (500g umthwalo)
晶粒大小 / Grain SiZe	2 ~ 10μm
纯度 / Chemical Purity	99.99995%
热容 / Amandla Okushisa	640 J·kg^-1·K^-1
升华温度 / I-Sublimation Temperature	2700℃
抗弯强度 / Amandla e-Flexural	I-415 MPa RT amaphuzu angu-4
杨氏模量 / Young's Modulus	I-430 Gpa 4pt bend, 1300℃
导热系数 / Thermal Conductivity	300W·m^-1·K^-1
热膨胀系数 / Ukunwetshwa kwe-Thermal(CTE)	4.5×10^-6K^-1

I-VET Energy ingumkhiqizi wangempela wemikhiqizo ye-graphite ne-silicon carbide eyenziwe ngokwezifiso enezembozo ezahlukene njenge-SiC coating, i-TaC coating, i-glassy carbon coating, i-pyrolytic carbon coating, njll., ingahlinzeka ngezingxenye ezahlukahlukene ezenziwe ngokwezifiso zemboni ye-semiconductor kanye ne-photovoltaic.

Ithimba lethu lobuchwepheshe livela ezikhungweni zocwaningo zasekhaya eziphezulu, lingakunikeza izixazululo zezinto zobuchwephesha ezengeziwe.

Sihlala sithuthukisa izinqubo ezithuthukisiwe ukuze sinikeze izinto ezithuthukisiwe kakhulu, futhi sisebenze ubuchwepheshe obukhethekile obunelungelo lobunikazi, obungenza ukubopha phakathi kwesembozo kanye nesisekelo kube kuqinile futhi kungahlukani kakhulu.

Siyakwamukela ngemfudumalo ukuthi uvakashele ifektri yethu, ake sixoxe kabanzi!