The Global Silicon Carbide Coating Market Report 2020-2026 offers extensive important statistics, future trends, and competitive landscape data in the particular sector. The research report on the ...
A new method to fit together layers of semiconductors as thin as a few nanometres has resulted in not only a scientific discovery but also a new type of transistor for high-power electronic devices...
When silicon carbide crystal grows, the “environment” of the growth interface between the axial center of the crystal and the edge is different, so that the crystal stress on the edge i...
The PVT method, whose full name is Physical Vapor Transportation, is a common method for growing silicon carbide (SiC)crystals under high temperature and high pressure. Its basic principle is to he...
The function of bipolar plate (also known as diaphragm) is to provide gas flow channel, prevent the collusion between hydrogen and oxygen in the battery gas chamber, and establish a current path be...
The technical difficulties in stably mass-producing high-quality silicon carbide wafers with stable performance include:
1) Since crystals need to grow in a high-temperature sealed environment a...