SiC mai rufaffiyar ginshiƙi ana amfani da su don tallafawa da ɗora ɗigon kristal guda ɗaya a cikin kayan aikin tururi na ƙarfe-kwayoyin halitta (MOCVD). Kwanciyar hankali na thermal, daidaiton yanayin zafi da sauran sigogin aikin SiC mai rufaffiyar graphite tushe suna taka muhimmiyar rawa a cikin ingancin ci gaban kayan epitaxial, don haka shine babban maɓalli na kayan aikin MOCVD.
A cikin aiwatar da masana'antar wafer, ana ƙara gina yadudduka na epitaxial akan wasu kayan wafer don sauƙaƙe kera na'urori. Na'urori masu fitar da haske na LED na yau da kullun suna buƙatar shirya sassan epitaxial na GaAs akan abubuwan siliki; SiC epitaxial Layer yana girma a kan madaidaicin SiC don gina na'urori irin su SBD, MOSFET, da dai sauransu, don babban ƙarfin lantarki, babban halin yanzu da sauran aikace-aikacen wutar lantarki; GaN epitaxial Layer an gina shi akan sic substrate mai rufewa don ƙara gina HEMT da sauran na'urori don aikace-aikacen RF kamar sadarwa. Wannan tsari ba ya rabuwa da kayan aikin CVD.
A cikin kayan aikin CVD, ba za a iya sanya substrate kai tsaye a kan ƙarfe ko kuma kawai a sanya shi a kan tushe don ƙaddamar da epitaxial, saboda ya haɗa da iskar gas (a kwance, tsaye), zafin jiki, matsa lamba, gyarawa, zubar da gurɓataccen abu da sauran abubuwan da ke haifar da tasiri. Saboda haka, ana buƙatar tushe, sa'an nan kuma an sanya substrate a kan diski, sa'an nan kuma an gudanar da jigilar epitaxial a kan substrate ta amfani da fasahar CVD, kuma wannan tushe shine SiC mai rufin graphite tushe (wanda aka fi sani da tray).
SiC mai rufaffiyar ginshiƙi ana amfani da su don tallafawa da ɗora ɗigon kristal guda ɗaya a cikin kayan aikin tururi na ƙarfe-kwayoyin halitta (MOCVD). Kwanciyar hankali na thermal, daidaiton yanayin zafi da sauran sigogin aikin SiC mai rufaffiyar graphite tushe suna taka muhimmiyar rawa a cikin ingancin ci gaban kayan epitaxial, don haka shine babban maɓalli na kayan aikin MOCVD.
Metal-organic chemical vapor deposition (MOCVD) shine babbar fasaha don haɓaka haɓakar fina-finai na GaN a cikin LED shuɗi. Yana da fa'idodin aiki mai sauƙi, ƙimar haɓaka mai iya sarrafawa da babban tsabtar fina-finan GaN. A matsayin wani muhimmin sashi a cikin ɗakin amsawa na kayan aiki na MOCVD, ginin da aka yi amfani da shi don GaN fim ɗin ci gaban epitaxial yana buƙatar samun fa'idodin juriya na zafin jiki mai ƙarfi, haɓakaccen yanayin zafi, ingantaccen kwanciyar hankali na sinadarai, juriya mai ƙarfi na thermal, da sauransu.
Kamar yadda daya daga cikin core aka gyara na MOCVD kayan aiki, graphite tushe ne m da kuma dumama jiki na substrate, wanda kai tsaye kayyade uniformity da kuma tsarki na fim abu, don haka ta ingancin kai tsaye rinjayar da shirye-shiryen na epitaxial takardar, kuma a lokaci guda, tare da karuwa da yawan amfani da kuma canji na yanayin aiki, yana da sauqi a sawa, na zuwa ga cinyewa.
Ko da yake graphite yana da kyakkyawan yanayin zafi da kwanciyar hankali, yana da fa'ida mai kyau azaman tushen kayan aikin MOCVD, amma a cikin tsarin samarwa, graphite zai lalata foda saboda ragowar iskar gas da ƙwayoyin ƙarfe, kuma rayuwar sabis na tushen graphite za a ragu sosai. A lokaci guda, fadowar graphite foda zai haifar da gurɓataccen gurɓataccen guntu.
Bayyanar fasahar sutura na iya samar da gyaran gyare-gyaren foda, haɓaka haɓakaccen zafi, da daidaita rarraba zafi, wanda ya zama babban fasaha don magance wannan matsala. Graphite tushe a MOCVD kayan aiki amfani yanayi, graphite tushe shafi shafi ya kamata hadu da wadannan halaye:
(1) Tushen graphite za a iya nannade shi sosai, kuma yawancin yana da kyau, in ba haka ba graphite tushe yana da sauƙin lalata a cikin iskar gas.
(2) Ƙarfin haɗin gwiwa tare da ginshiƙan graphite yana da girma don tabbatar da cewa rufin ba shi da sauƙi ya fadi bayan yawancin yawan zafin jiki da ƙananan zafin jiki.
(3) Yana da kyakkyawan kwanciyar hankali na sinadarai don guje wa gazawar shafi a cikin babban zafin jiki da yanayin lalata.
SiC yana da fa'idodi na juriya na lalata, haɓakar haɓakar thermal, juriya na zafin zafi da kwanciyar hankali mai ƙarfi, kuma yana iya aiki da kyau a cikin yanayin GaN epitaxial. Bugu da ƙari, ƙimar haɓakar haɓakar thermal na SiC ya bambanta kaɗan da na graphite, don haka SiC shine kayan da aka fi so don rufin saman ginshiƙi.
A halin yanzu, SiC na kowa shine nau'in 3C, 4H da 6H, kuma SiC na amfani da nau'ikan lu'ulu'u daban-daban sun bambanta. Misali, 4H-SiC na iya kera na'urori masu ƙarfi; 6H-SiC shine mafi kwanciyar hankali kuma yana iya kera na'urorin lantarki; Saboda tsarinsa mai kama da GaN, ana iya amfani da 3C-SiC don samar da GaN epitaxial Layer da kera na'urorin SiC-GaN RF. 3C-SiC kuma an fi sani da β-SiC, kuma muhimmin amfani da β-SiC shine fim da kayan shafa, don haka β-SiC a halin yanzu shine babban kayan shafa.
Hanyar shirya suturar siliki carbide
A halin yanzu, hanyoyin shirye-shirye na suturar SiC galibi sun haɗa da hanyar gel-sol, hanyar sakawa, hanyar shafa buroshi, hanyar fesa plasma, hanyar amsawar iskar gas (CVR) da hanyar sanya tururi (CVD).
Hanyar haɗawa:
Hanyar wani nau'i ne na babban zafin jiki m lokaci sintering, wanda yafi amfani da cakuda Si foda da C foda a matsayin saka foda, da graphite matrix aka sanya a cikin saka foda, da kuma high zafin jiki sintering ne da za'ayi a cikin inert gas, kuma a karshe da SiC shafi aka samu a saman da graphite matrix. Tsarin yana da sauƙi kuma haɗuwa tsakanin sutura da substrate yana da kyau, amma daidaituwa na sutura tare da jagorancin kauri ba shi da kyau, wanda yake da sauƙi don samar da ƙarin ramuka kuma ya haifar da rashin ƙarfi na oxidation.
Hanyar shafawa:
Hanyar shafan goga ita ce goge albarkatun ruwa a saman matrix ɗin graphite, sannan a warkar da albarkatun ƙasa a wani yanayin zafi don shirya sutura. Tsarin yana da sauƙi kuma farashin yana da ƙasa, amma suturar da aka shirya ta hanyar gyaran gyare-gyaren gyare-gyare yana da rauni a hade tare da substrate, rashin daidaituwa na sutura ba shi da kyau, murfin yana da bakin ciki kuma ƙarancin oxidation yana da ƙananan, kuma ana buƙatar wasu hanyoyin don taimakawa.
Hanyar fesa Plasma:
Hanyar fesa plasma galibi shine don fesa kayan da aka narke ko narkar da su a saman matrix ɗin graphite tare da bindigar plasma, sannan a ƙarfafa da haɗin gwiwa don samar da sutura. Hanyar yana da sauƙi don aiki kuma yana iya shirya suturar siliki na siliki mai mahimmanci, amma murfin siliki na siliki wanda aka shirya ta hanyar sau da yawa yana da rauni sosai kuma yana haifar da rashin ƙarfi na rashin ƙarfi, don haka ana amfani dashi gabaɗaya don shirye-shiryen na SiC composite shafi don inganta ingancin sutura.
Hanyar gel-sol:
Hanyar gel-sol shine yawanci don shirya uniform kuma bayyananniyar maganin sol wanda ke rufe saman matrix, bushewa cikin gel sannan sintering don samun sutura. Wannan hanya ce mai sauƙi don aiki da ƙananan farashi, amma rufin da aka samar yana da wasu kurakurai kamar ƙananan juriya na zafi da sauƙi mai sauƙi, don haka ba za a iya amfani da shi sosai ba.
Sinadarin Gas Reaction (CVR):
CVR yafi haifar da suturar SiC ta hanyar amfani da Si da SiO2 foda don samar da tururi na SiO a babban zafin jiki, kuma jerin halayen sinadaran suna faruwa a saman C abu substrate. Rufin SiC da aka shirya ta wannan hanyar yana da alaƙa da ɗanɗano sosai, amma yanayin zafin jiki ya fi girma kuma farashin ya fi girma.
Zubar da Turin Chemical (CVD):
A halin yanzu, CVD shine babban fasaha don shirya suturar SiC akan farfajiyar ƙasa. Babban tsari shine jerin halayen jiki da sinadarai na lokacin iskar gas na reactant abu akan farfajiyar ƙasa, kuma a ƙarshe an shirya suturar SiC ta hanyar sakawa a saman ƙasa. Rufin SiC da aka shirya ta hanyar fasahar CVD yana da alaƙa da alaƙa da farfajiyar ƙasa, wanda zai iya inganta haɓakar iskar shaka da juriya da juriya na kayan aikin, amma lokacin shigar da wannan hanyar ya fi tsayi, kuma iskar gas tana da wani iskar gas mai guba.
Halin kasuwa na SiC mai rufin graphite mai rufi
Lokacin da masana'antun kasashen waje suka fara da wuri, suna da kyakkyawan jagora da babban rabon kasuwa. A duk duniya, manyan masu siyar da tushe na SiC mai rufin graphite sune Dutch Xycard, Jamus SGL Carbon (SGL), Japan Toyo Carbon, Amurka MEMC da sauran kamfanoni, waɗanda ke mamaye kasuwannin duniya. Ko da yake kasar Sin ta karya ta hanyar key core fasahar girma uniform girma na SiC shafi a saman graphite matrix, high quality graphite matrix har yanzu dogara ga Jamus SGL, Japan Toyo Carbon da sauran masana'antu, graphite matrix samar da cikin gida Enterprises yana shafar da sabis saboda thermal watsin, na roba modules, m, ingancin lattice da sauran modules. Kayan aikin MOCVD ba zai iya biyan buƙatun yin amfani da tushe mai rufi na SiC ba.
Masana'antar semiconductor ta kasar Sin tana haɓaka cikin sauri, tare da haɓaka ƙimar kayan aikin MOCVD a hankali, da sauran haɓaka aikace-aikacen aikace-aikacen, ana sa ran kasuwar samfuran sinadarai mai rufi na SiC na gaba za ta yi girma cikin sauri. Bisa kididdigar da masana'antu na farko suka yi, kasuwar ginshiki ta gida za ta zarce yuan miliyan 500 a cikin 'yan shekaru masu zuwa.
SiC mai rufi graphite tushe shi ne core bangaren fili semiconductor masana'antu kayan aiki, ƙware da key core fasaha na samar da kuma masana'antu, da kuma gane da localization na dukan albarkatun kasa-tsari-kayan masana'antu sarkar ne mai girma dabarun muhimmanci ga tabbatar da ci gaban na kasar Sin semiconductor masana'antu. Filin tushe na SiC mai rufaffiyar graphite yana haɓaka, kuma ingancin samfur na iya isa matakin ci gaba na ƙasa da ƙasa nan ba da jimawa ba.
Lokacin aikawa: Yuli-24-2023