SiC isize ibishushanyo mbonera bikoreshwa muburyo bwo gushyigikira no gushyushya insimburangingo imwe ya kirisiti mu bikoresho bya chimique biva mu byuma (MOCVD). Ubushyuhe bwumuriro, uburinganire bwubushyuhe hamwe nibindi bipimo bya SiC isize grafite base bigira uruhare runini mubwiza bwikura ryibintu bya epitaxial, bityo rero nikintu cyingenzi cyibikoresho bya MOCVD.
Muburyo bwo gukora wafer, ibice bya epitaxial byongeye kubakwa kuri wafer substrate kugirango byoroherezwe gukora ibikoresho. Ibikoresho bisanzwe LED bitanga urumuri bigomba gutegura epitaxial layer ya GaAs kuri sisitemu ya silicon; Igice cya epitaxial ya SiC gihingwa kuri substrate ya SiC ikora kugirango yubake ibikoresho nka SBD, MOSFET, nibindi, kuri voltage nyinshi, amashanyarazi menshi hamwe nizindi mbaraga zikoreshwa; GaN epitaxial layer yubatswe kuri kimwe cya kabiri cyubatswe na SiC substrate kugirango irusheho kubaka HEMT nibindi bikoresho bikoreshwa na RF nko gutumanaho. Iyi nzira ntishobora gutandukana nibikoresho bya CVD.
Mu bikoresho bya CVD, insimburangingo ntishobora gushyirwa ku cyuma cyangwa ngo ishyirwe gusa ku musingi wo kwanduza epitaxial, kubera ko irimo imyuka ya gaze (itambitse, ihagaritse), ubushyuhe, umuvuduko, gukosorwa, kumena imyanda n’ibindi bintu bitera ingaruka. Kubwibyo, harakenewe shingiro, hanyuma substrate igashyirwa kuri disiki, hanyuma epitaxial depition ikorerwa kuri substrate ikoresheje tekinoroji ya CVD, kandi iyi base ni SiC yubatswe na grafite (nanone izwi nka tray).
SiC isize ibishushanyo mbonera bikoreshwa muburyo bwo gushyigikira no gushyushya insimburangingo imwe ya kirisiti mu bikoresho bya chimique biva mu byuma (MOCVD). Ubushyuhe bwumuriro, uburinganire bwubushyuhe hamwe nibindi bipimo bya SiC isize grafite base bigira uruhare runini mubwiza bwikura ryibintu bya epitaxial, bityo rero nikintu cyingenzi cyibikoresho bya MOCVD.
Ibyuma biva mu bimera (MOCVD) nubuhanga bwibanze bwo gukura kwa epitaxial ya firime ya GaN muri LED yubururu. Ifite ibyiza byo gukora byoroshye, kugenzura umuvuduko wubwiyongere no kwera kwinshi kwa firime ya GaN. Nkibintu byingenzi mubyumba byakira ibikoresho bya MOCVD, urufatiro rukoreshwa mukuzamura epitaxial ya GaN ya firime rugomba kugira ibyiza byo guhangana nubushyuhe bwo hejuru, ubushyuhe bwumuriro umwe, ihindagurika ryimiti, imbaraga zikomeye zo guhangana nubushyuhe, nibindi.
Nka kimwe mu bintu by'ibanze bigize ibikoresho bya MOCVD, igishushanyo mbonera ni cyo gutwara no gushyushya umubiri wa substrate, igena mu buryo butaziguye uburinganire n'ubwuzuzanye bw'ibikoresho bya firime, bityo ubwiza bwayo bukagira ingaruka ku buryo butaziguye ku itegurwa ry'urupapuro rwa epitaxial, kandi icyarimwe, hamwe no kwiyongera k'umubare w'imikoreshereze no guhindura imiterere y'akazi, biroroshye cyane kwambara, bijyanye n'ibikoreshwa.
Nubwo grafite ifite ubushyuhe bwiza kandi butajegajega, ifite inyungu nziza nkibigize shingiro ryibikoresho bya MOCVD, ariko mugikorwa cyo kuyibyaza umusaruro, grafite izonona ifu kubera ibisigisigi bya gaze yangirika n’ibinyabuzima byuma, kandi ubuzima bwa serivisi ya base ya grafite buzagabanuka cyane. Mugihe kimwe, ifu ya grafite igwa bizatera umwanda kuri chip.
Kugaragara kwikoranabuhanga rya coating birashobora gutanga ifu yubutaka, kongera ubushyuhe bwumuriro, no kunganya ikwirakwizwa ryubushyuhe, ryabaye ikoranabuhanga nyamukuru ryo gukemura iki kibazo. Igishushanyo mbonera mubikoresho bya MOCVD koresha ibidukikije, igishushanyo mbonera cya grafite kigomba kuba cyujuje ibi bikurikira:
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(3) Ifite imiti ihamye kugirango yirinde gutwika ubushyuhe bukabije hamwe nikirere cyangirika.
SiC ifite ibyiza byo kurwanya ruswa, gutwara ubushyuhe bwinshi, kurwanya ubushyuhe bwumuriro hamwe n’imiti ihamye, kandi irashobora gukora neza mukirere cya GaN. Mubyongeyeho, coefficente yo kwagura ubushyuhe bwa SiC itandukanye cyane na grafite, bityo SiC nikintu cyatoranijwe kubutaka bwo hejuru bwa grafite.
Kugeza ubu, SiC isanzwe ni ubwoko bwa 3C, 4H na 6H, kandi SiC ikoresha ubwoko bwa kristu butandukanye. Kurugero, 4H-SiC irashobora gukora ibikoresho bifite ingufu nyinshi; 6H-SiC nicyo gihamye kandi gishobora gukora ibikoresho byamashanyarazi; Kubera imiterere isa na GaN, 3C-SiC irashobora gukoreshwa mugukora ibice bya epitaxial GaN no gukora ibikoresho bya SiC-GaN RF. 3C-SiC izwi kandi nka β-SiC, kandi gukoresha cyane β-SiC ni nka firime n'ibikoresho byo gutwikira, bityo β-SiC kuri ubu ni ibikoresho by'ingenzi byo gutwikira.
Uburyo bwo gutegura silicon karbide
Kugeza ubu, uburyo bwo gutegura ibishishwa bya SiC burimo cyane cyane uburyo bwa gel-sol, uburyo bwo gushiramo, uburyo bwo gutwika brush, uburyo bwo gutera plasma, uburyo bwa reaction ya gaze ya chimique (CVR) nuburyo bwo kubika imyuka ya chimique (CVD).
Uburyo bwo gushira:
Uburyo ni ubwoko bwubushyuhe bwo hejuru icyiciro cya sinteri, ikoresha cyane cyane ivangwa ryifu ya Si nifu ya C nkifu yinjizwamo, matrix ya grafite ishyirwa mubifu, kandi gucana ubushyuhe bwo hejuru bikorerwa muri gaze ya inert, hanyuma amaherezo ya SiC ikaboneka hejuru ya matrise ya grafite. Inzira iroroshye kandi guhuza hagati yigitereko na substrate nibyiza, ariko uburinganire bwikibiriti ku cyerekezo cyubugari ni bubi, byoroshye kubyara imyobo myinshi kandi biganisha ku kurwanya nabi okiside.
Brush uburyo bwo gutwikira:
Uburyo bwo gutwikisha brush ni uburyo bwo koza ibintu bibisi byamazi hejuru ya matrise ya grafite, hanyuma bigakiza ibikoresho bibisi mubushyuhe runaka kugirango utegure igifuniko. Inzira iroroshye kandi ikiguzi ni gito, ariko igipfundikizo cyateguwe nuburyo bwo gutwikira brush ni ntege nke zifatanije na substrate, uburinganire bwa coating ni bubi, igifuniko ni gito kandi kurwanya okiside ni bike, kandi nubundi buryo burakenewe kugirango ubufashe.
Uburyo bwo gutera plasma:
Uburyo bwo gutera plasma ni ugutera ahanini ibikoresho fatizo byashongeshejwe cyangwa byashongeshejwe hejuru ya matrise ya grafite hamwe nimbunda ya plasma, hanyuma bigakomera hanyuma bigahuza igipfundikizo. Uburyo bworoshe gukora kandi burashobora gutegura igipande cinshi cya silicon karbide, ariko karubide ya silicon carbide yateguwe nuburyo akenshi iba ifite intege nke cyane kandi iganisha ku kurwanya imbaraga za okiside, bityo rero ikoreshwa muburyo bwo gutegura igipande cya SiC kugirango kizamure ubwiza bwacyo.
Uburyo bwa Gel-sol:
Uburyo bwa gel-sol nugutegura cyane cyane igisubizo kiboneye kandi kibonerana gikingira hejuru ya matrix, kuma muri gel hanyuma ugacumura kugirango ubone igifuniko. Ubu buryo buroroshye gukora kandi buke mubiciro, ariko igipfundikizo cyakozwe gifite ibitagenda neza nko guhangana nubushyuhe buke bwumuriro no guturika byoroshye, ntabwo rero bishobora gukoreshwa cyane.
Imyuka ya gazi (CVR):
CVR itanga cyane cyane igicapo cya SiC ikoresheje ifu ya Si na SiO2 kugirango itange amavuta ya SiO mubushyuhe bwinshi, kandi urukurikirane rwibintu bya chimique bibera hejuru yubutaka bwa C. Igicapo cya SiC cyateguwe nubu buryo gifitanye isano rya hafi na substrate, ariko ubushyuhe bwa reaction buri hejuru kandi ikiguzi ni kinini.
Kubika imyuka ya chimique (CVD):
Kugeza ubu, CVD nubuhanga bukuru bwo gutegura SiC ikozwe hejuru yubutaka. Inzira nyamukuru nuruhererekane rwibintu bya fiziki na chimique yibintu bya gaze ya gaze hejuru yubutaka, hanyuma amaherezo ya SiC itegurwa no kubitsa hejuru yubutaka. Ipitingi ya SiC yateguwe nubuhanga bwa CVD ihujwe cyane nubuso bwa substrate, bushobora kunoza neza kurwanya okiside no kurwanya abstratif yibikoresho byubutaka, ariko igihe cyo kohereza ubu buryo ni kirekire, kandi gaze ya reaction ifite gaze yubumara runaka.
Imiterere yisoko rya SiC yatwikiriye igishushanyo mbonera
Iyo abanyamahanga batangiye kare, bari bafite icyerekezo gisobanutse kandi bafite isoko ryinshi. Ku rwego mpuzamahanga, abatanga isoko rya SiC basize ibishushanyo mbonera ni Ubuholandi Xycard, Ubudage SGL Carbon (SGL), Ubuyapani Toyo Carbon, Amerika MEMC n’andi masosiyete, ahanini akaba afite isoko mpuzamahanga. Nubwo Ubushinwa bwacishije mu ikoranabuhanga ry’ibanze ry’iterambere ry’uburinganire bwa SiC hejuru ya matrise ya grafite, matrike yo mu rwego rwo hejuru iracyashingira ku Budage SGL, Ubuyapani Toyo Carbon n’indi mishinga, matrise ya grafite itangwa n’ibigo by’imbere mu gihugu igira ingaruka ku mibereho ya serivisi bitewe n’ubushyuhe bw’umuriro, modulike ikaze, modulus zikomeye n’ibindi bibazo bifite ireme. Ibikoresho bya MOCVD ntibishobora kuba byujuje ibisabwa kugirango ukoreshe ibishushanyo mbonera bya SiC.
Inganda za semiconductor mu Bushinwa ziratera imbere byihuse, hamwe n’ubwiyongere buhoro buhoro ibikoresho bya epitaxial ibikoresho bya MOCVD, hamwe n’ibindi bikorwa byiyongera, isoko ry’ibicuruzwa fatizo bya SiC bizaza byiyongera vuba. Dukurikije ibigereranyo by’inganda bibanza, isoko fatizo yo mu gihugu izarenga miliyoni 500 mu myaka mike iri imbere.
SiC isize igishushanyo mbonera ni igice cyibanze cyibikoresho byo mu nganda zikoreshwa mu nganda, kumenya ikoranabuhanga ry’ibanze ry’umusaruro n’inganda, no kumenya aho urwego rw’ibikoresho fatizo-bitunganyirizwa mu nganda bifite akamaro kanini mu guteza imbere inganda z’ubukorikori bw’Ubushinwa. Umwanya wo murugo wa SiC washyizweho na grafite base uratera imbere, kandi ubuziranenge bwibicuruzwa bushobora kugera kurwego mpuzamahanga rwateye imbere vuba.
Igihe cyoherejwe: Nyakanga-24-2023