Ishingiro rya grafiti ikozwe muri SiC rikunze gukoreshwa mu gushyigikira no gushyushya substrates za kristale imwe mu bikoresho bya metal-organic chemical vapor deposition (MOCVD). Ubushyuhe buhamye, ubushyuhe bungana n'ibindi bipimo by'imikorere bya SiC bifite uruhare runini mu mikurire y'ibikoresho bya epitaxial, bityo ni cyo gice cy'ingenzi cy'ibikoresho bya MOCVD.
Mu gikorwa cyo gukora wafer, epitaxial layers zubakwa kuri substrate zimwe na zimwe za wafer kugira ngo byorohereze gukora ibikoresho. Ibikoresho bisanzwe bitanga urumuri rwa LED bigomba gutegura epitaxial layers za GaAs kuri substrate za silicon; Urwego rwa epitaxial rwa SiC ruhingwa kuri substrate ya SiC iyobora amashanyarazi kugira ngo hubakwe ibikoresho nka SBD, MOSFET, nibindi, kugira ngo hubakwe voltage nyinshi, power nyinshi n'izindi ngufu; Urwego rwa epitaxial rwa GaN rwubakwa kuri substrate ya SiC ifite ubwikorezi buciriritse kugira ngo hubakwe HEMT n'ibindi bikoresho byo gukoresha RF nko gutumanaho. Iyi nzira ntishobora gutandukanywa n'ibikoresho bya CVD.
Mu bikoresho bya CVD, substrate ntishobora gushyirwa ku cyuma cyangwa ngo ishyirwe ku gice cyo hasi kugira ngo ishyirweho epitaxial, kuko ikubiyemo urujya n'uruza rwa gaze (urutambitse, ruhagaze), ubushyuhe, umuvuduko, guhagarara, gusenya imyanda n'ibindi bintu bigize ingaruka. Bityo, hakenewe ishingiro, hanyuma substrate ishyirwa kuri disiki, hanyuma epitaxial ishyirwa ku gice cyo hasi hakoreshejwe ikoranabuhanga rya CVD, kandi iyi base ni ishingiro rya grafiti ya SiC (izwi kandi ku izina rya tray).
Ishingiro rya grafiti ikozwe muri SiC rikunze gukoreshwa mu gushyigikira no gushyushya substrates za kristale imwe mu bikoresho bya metal-organic chemical vapor deposition (MOCVD). Ubushyuhe buhamye, ubushyuhe bungana n'ibindi bipimo by'imikorere bya SiC bifite uruhare runini mu mikurire y'ibikoresho bya epitaxial, bityo ni cyo gice cy'ingenzi cy'ibikoresho bya MOCVD.
Ikoreshwa mu gukura kw'umwuka w'ibinyabutabire mu byuma (MOCVD) ni ikoranabuhanga rikuru rituma filime za GaN zikura mu buryo bw'ubururu bwa LED. Rifite ibyiza byoroshye gukora, uburyo bwo gukura bugenzurwa kandi rikagira ubuziranenge bwinshi muri filime za GaN. Nk'igice cy'ingenzi mu cyumba cy'ibinyabutabire cy'ibikoresho bya MOCVD, icyuma gikoreshwa mu gukura kw'ibinyabutabire mu buryo bw'ubushyuhe bukabije kigomba kugira ibyiza byo kudashyuha cyane, gutwara ubushyuhe bumwe, kudahindagurika neza mu binyabutabire, kudashyuha cyane, nibindi. Ibikoresho bya Graphite bishobora kuzuza ibisabwa byavuzwe haruguru.
Kimwe mu bice by'ingenzi by'ibikoresho bya MOCVD, ishingiro rya grafiti ni ryo ritwara n'iry'ubushyuhe bw'icyuma gishyushya, rigena mu buryo butaziguye imiterere n'ubuziranenge bw'ibikoresho bya firime, bityo ubwiza bwabyo bugira ingaruka zitaziguye ku itegurwa ry'urupapuro rwa epitaxial, kandi icyarimwe, hamwe n'ubwiyongere bw'ikoreshwa n'impinduka z'imikorere, biroroshye cyane kwambara, bikaba biri mu bikoresho bikoreshwa.
Nubwo grafiti ifite ubushobozi bwo gutwara ubushyuhe n'ubudahangarwa, ifite akarusho gakomeye nk'igice cy'ibanze cy'ibikoresho bya MOCVD, ariko mu ikorwa ryayo, grafiti izangiza ifu bitewe n'ibisigazwa by'imyuka yangiza n'ibintu by'umwimerere by'icyuma, kandi igihe cyo gukora cy'ishingiro rya grafiti kizagabanuka cyane. Muri icyo gihe, ifu ya grafiti igwa izatera umwanda kuri chip.
Iterambere ry'ikoranabuhanga ryo gusiga rishobora gutanga uburyo bwo gufata ifu yo hejuru, kongera uburyo ubushyuhe butwara, no kuringaniza uburyo ubushyuhe bukwirakwira, ari na bwo bwabaye ikoranabuhanga nyamukuru ryo gukemura iki kibazo. Ishingiro rya grafiti mu bikoresho bya MOCVD, ishyirwa ry'ishingiro rya grafiti rigomba kuba ryujuje ibi bikurikira:
(1) Igishishwa cya grafiti gishobora gupfunyikwa neza, kandi ubucucike ni bwiza, bitabaye ibyo igishishwa cya grafiti cyoroshye kwangirika muri iyo gaze yangiza.
(2) Ingufu zivanze n'ishingiro rya grafiti ni nyinshi kugira ngo irangi ritakoroha kugwa nyuma y'ibihe byinshi by'ubushyuhe bwinshi n'ubushyuhe buke.
(3) Ifite ubushobozi bwo kudacika intege mu buryo bukabije kugira ngo yirinde ko irangi rigwa mu gihe cy'ubushyuhe bwinshi n'ikirere cyangiza.
SiC ifite ibyiza byo kudatwarwa n’ingufu, kudatwarwa n’ubushyuhe bwinshi, kudatwarwa n’ubushyuhe bwinshi ndetse no kudahungabana cyane mu binyabutabire, kandi ishobora gukora neza mu kirere cya GaN epitaxial. Byongeye kandi, ingano y’ubushyuhe ya SiC itandukanye cyane n’iya graphite, bityo SiC ni yo ikoreshwa cyane mu gutwikira ubuso bw’ishingiro rya graphite.
Muri iki gihe, SiC isanzwe ahanini ni ubwoko bwa 3C, 4H na 6H, kandi uburyo SiC ikoreshwa mu bwoko butandukanye bwa kristu buratandukanye. Urugero, 4H-SiC ishobora gukora ibikoresho bifite ingufu nyinshi; 6H-SiC ni yo ihamye cyane kandi ishobora gukora ibikoresho by'amashanyarazi; Kubera imiterere yayo isa na GaN, 3C-SiC ishobora gukoreshwa mu gukora urwego rwa GaN epitaxial no gukora ibikoresho bya SiC-GaN RF. 3C-SiC izwi kandi nka β-SiC, kandi ikoreshwa ry'ingenzi rya β-SiC ni nk'ibikoresho bya firime n'imvange, bityo β-SiC ubu ni yo mvange y'ingenzi.
Uburyo bwo gutegura irangi rya silicon carbide
Kugeza ubu, uburyo bwo gutegura SiC coating burimo ahanini uburyo bwa gel-sol, uburyo bwo gushyiramo, uburyo bwo gusiga brush coating, uburyo bwo gutera plasma, uburyo bwo gukora imyuka ya chemical reaction (CVR) n'uburyo bwo gushyiramo umwuka wa chemical vapor (CVD).
Uburyo bwo gushyiramo:
Ubu buryo ni ubwoko bw'uburyo bwo gusinya ibintu mu bushyuhe bwinshi, bukoresha cyane cyane ifu ya Si na C nk'ifu yo gusinya, graphite matrix ishyirwa mu ifu yo gusinya, hanyuma ikirere cyo gusinya ibintu mu bushyuhe bwinshi gikorerwa muri gaze idafite imvange, amaherezo icyuma cya SiC gishyirwa ku buso bwa graphite matrix. Uburyo ni bworoshye kandi guhuza icyuma n'icyuma ni byiza, ariko imiterere y'icyuma mu cyerekezo cy'ubugari ni mibi, ibyo bikaba byoroshye gukora imyobo myinshi bigatuma habaho ubudahangarwa bubi bwo gusinya ibintu.
Uburyo bwo gusiga uburoso:
Uburyo bwo gusiga uburoso ni ugusuka ibikoresho fatizo by'amazi ku buso bwa grafiti matrix, hanyuma ugasiga ibikoresho fatizo ku bushyuhe runaka kugira ngo utegure igitambaro. Uburyo bworoshye kandi igiciro ni gito, ariko igitambaro cyateguwe hakoreshejwe uburyo bwo gusiga uburoso ni gito iyo gihujwe n'umubumbe, uburinganire bw'igitambaro ni bubi, igitambaro ni gito kandi ubudahangarwa bw'umwuka ni buke, kandi hakenewe ubundi buryo bwo kubifasha.
Uburyo bwo gutera plasma:
Uburyo bwo gutera plasma ahanini ni ugutera ibikoresho fatizo byashongeshejwe cyangwa byashongeshejwe ku buso bwa grafiti ukoresheje imbunda ya plasma, hanyuma bigakomera bigafatana kugira ngo bikore irangi. Ubu buryo bworoshye gukoresha kandi bushobora gutegura irangi rya silicon carbide rinini, ariko irangi rya silicon carbide ryateguwe n'ubu buryo akenshi riba rito cyane kandi rigatuma ridashobora gushonga neza, bityo muri rusange rikoreshwa mu gutegura irangi rya SiC rivanze kugira ngo ryongere ubwiza bw'irangi.
Uburyo bwa Gel-sol:
Uburyo bwa gel-sol ahanini ni ugutegura umuti wa sol umwe kandi ubonerana utwikira hejuru ya matrix, wumisha gel hanyuma ugacamo umwuka kugira ngo haboneke irangi. Ubu buryo bworoshye gukoresha kandi buhendutse, ariko irangi rikorwa rifite inenge zimwe na zimwe nko kudashyuha cyane no gucika byoroshye, bityo ntirishobora gukoreshwa cyane.
Uburyo imyuka ikoreshwa mu gukora ibinyabutabire (CVR):
CVR ahanini ikora SiC coating ikoresheje ifu ya Si na SiO2 kugira ngo ikore SiO2 steam ku bushyuhe bwinshi, kandi urukurikirane rw'ibinyabutabire bibaho ku buso bwa C material substrate. SiC coating yateguwe muri ubu buryo ifatanye cyane na substrate, ariko ubushyuhe bwa reaction buri hejuru kandi igiciro kiri hejuru.
Gukuraho umwuka w'ubumara mu mubiri (CVD):
Kugeza ubu, CVD ni ikoranabuhanga nyamukuru ryo gutegura irangi rya SiC ku buso bwa substrate. Inzira nyamukuru ni urukurikirane rw'ibikorwa bya fiziki n'ibinyabutabire by'ibikoresho bya gaze phase reactant ku buso bwa substrate, hanyuma irangi rya SiC ritegurwa hakoreshejwe irangi rya substrate. Irangi rya SiC ryateguwe n'ikoranabuhanga rya CVD rifatanye cyane n'ubuso bwa substrate, bishobora kunoza neza ubudahangarwa bw'ingufu za oxidation n'ubudahangarwa bw'ibikoresho bya substrate, ariko igihe cyo gushyiramo ubu buryo ni kirekire, kandi gaze ya reaction ifite gaze y'uburozi runaka.
Uko isoko ry’ishingiro rya grafiti rikozwe na SiC rihagaze
Ubwo inganda z’abanyamahanga zatangiraga kare, zari zifite icyerekezo gisobanutse kandi zifite isoko rinini. Ku rwego mpuzamahanga, abatanga ibikoresho by’ingenzi bya SiC coated graphite base ni Dutch Xycard, Germany SGL Carbon (SGL), Japan Toyo Carbon, Leta Zunze Ubumwe za Amerika MEMC n’andi masosiyete, ahanini yiganje ku isoko mpuzamahanga. Nubwo Ubushinwa bwanyuze mu ikoranabuhanga ry’ingenzi ryo gukura kimwe cya SiC coated ku buso bwa graphite matrix, graphite matrix nziza iracyashingiye kuri SGL y’Abadage, Japan Toyo Carbon n’andi masosiyete, graphite matrix itangwa n’amasosiyete yo mu gihugu igira ingaruka ku buzima bwa serivisi bitewe n’ubushyuhe, elastic modulus, rigid modulus, lattice defects n’ibindi bibazo by’ubuziranenge. Ibikoresho bya MOCVD ntibishobora kuzuza ibisabwa byo gukoresha graphite coated base ya SiC.
Inganda za semiconductor zo mu Bushinwa zirimo gutera imbere vuba, hamwe n’ubwiyongere bw’umubare w’ibikoresho bya MOCVD epitaxial, ndetse n’izindi porogaramu zongerwa, isoko ry’ibicuruzwa bya graphite bya SiC riteganijwe kwiyongera cyane. Dukurikije ibipimo by’ibanze by’inganda, isoko ry’ibicuruzwa bya graphite byo mu gihugu rizarenga miliyoni 500 z’amayuani mu myaka mike iri imbere.
Ishingiro rya grafiti ikozwe muri SiC ni ingenzi mu bikoresho by’inganda bivanze, kumenya ikoranabuhanga ry’ingenzi mu gukora no gukora, no kumenya aho uruhererekane rw’ibikoresho fatizo n’ibikoresho fatizo biherereye ni ingenzi cyane mu guteza imbere inganda z’ibinyabutabire mu Bushinwa. Urwego rw’ibanze rwa grafiti ikozwe muri SiC rurimo gutera imbere, kandi ireme ry’ibicuruzwa rishobora kugera ku rwego mpuzamahanga vuba.
Igihe cyo kohereza: 24 Nyakanga-2023