Zvigadziko zvegrafiti zvakaputirwa neSiC zvinowanzo shandiswa kutsigira nekupisa makristaro ega ega mumidziyo yesimbi-organic chemical vapor deposition (MOCVD). Kugadzikana kwekupisa, kufanana kwekupisa uye zvimwe zvinongedzo zvekushanda kweSiC zvakaputirwa negrafiti zvinoita basa guru mukukura kwe epitaxial material, saka ndicho chinhu chikuru cheMOCVD michina.
Mukugadzirwa kwewafer, epitaxial layers dzinovakwazve pane mamwe mawafer substrates kuti zvive nyore kugadzira michina. Midziyo inowanzoburitsa chiedza che LED inofanirwa kugadzirira epitaxial layers dzeGaAs pane silicon substrates; SiC epitaxial layer inorimwa pane conductive SiC substrate yekuvaka michina yakaita seSBD, MOSFET, nezvimwewo, yemagetsi akakwira, magetsi akakwira uye mamwe mashandisirwo esimba; GaN epitaxial layer inovakwa pane semi-insulated SiC substrate kuti iwedzere kuvaka HEMT nezvimwe zvishandiso zveRF applications zvakaita sekutaurirana. Maitiro aya haaparadzaniswi neCVD equipment.
Mumidziyo yeCVD, substrate haigone kuiswa zvakananga pasimbi kana kungoiswa pahwaro hwekuisa epitaxial, nekuti inosanganisira kuyerera kwegasi (kwakatambanuka, kwakamira), tembiricha, kumanikidzwa, kugadziriswa, kubviswa kwezvinosvibisa nezvimwe zvinhu zvine chekuita nepesvedzero. Saka, hwaro hunodiwa, uye ipapo substrate inoiswa padiski, uye ipapo epitaxial inoiswa pahwaro uchishandisa tekinoroji yeCVD, uye hwaro uhwu iSiC coated graphite base (inozivikanwawo setrayi).
Zvigadziko zvegrafiti zvakaputirwa neSiC zvinowanzo shandiswa kutsigira nekupisa makristaro ega ega mumidziyo yesimbi-organic chemical vapor deposition (MOCVD). Kugadzikana kwekupisa, kufanana kwekupisa uye zvimwe zvinongedzo zvekushanda kweSiC zvakaputirwa negrafiti zvinoita basa guru mukukura kwe epitaxial material, saka ndicho chinhu chikuru cheMOCVD michina.
Metal-organic chemical vapor deposition (MOCVD) ndiyo tekinoroji huru yekukura kwemafirimu eGaN mubhuruu reLED. Ine zvakanakira zvekushanda kuri nyore, kukura kunodzorwa uye kuchena kwakanyanya kwemafirimu eGaN. Sechinhu chakakosha mukamuri rekuita reMOCVD, hwaro hwebheyaringi hunoshandiswa pakukura kwemafirimu eGaN hunofanirwa kuve nezvakanakira zvekudzivirira kupisa kwakanyanya, kufambisa kupisa kwakafanana, kugadzikana kwakanaka kwemakemikari, kuramba kupisa kwakasimba, nezvimwewo. Graphite material inogona kusangana nemamiriro ezvinhu ari pamusoro apa.
Sechimwe chezvinhu zvikuru zveMOCVD michina, girafiti base ndiyo inotakura uye inodziisa substrate, iyo inosarudza zvakananga kufanana uye kuchena kwezvinhu zvefirimu, saka hunhu hwayo hunokanganisa zvakananga kugadzirira epitaxial sheet, uye panguva imwe chete, nekuwedzera kwehuwandu hwekushandiswa uye shanduko yemamiriro ekushanda, iri nyore kwazvo kupfeka, iri yezvinhu zvinodyiwa.
Kunyangwe graphite iine thermal conductivity yakanaka uye kugadzikana, ine mukana wakanaka sechikamu chekutanga cheMOCVD michina, asi mukugadzirwa kwayo, graphite inoparadza upfu nekuda kwemagasi anoparadza uye organics esimbi, uye hupenyu hwebasa hwechigadziko chegraphite huchaderedzwa zvakanyanya. Panguva imwe chete, kudonha kweupfu hwegraphite kunokonzera kusvibiswa kwechip.
Kubuda kwetekinoroji yekuputira kunogona kupa hupfu hwepamusoro, kuwedzera kupisa, uye kuenzanisa kugoverwa kwekupisa, iyo yave tekinoroji huru yekugadzirisa dambudziko iri. Graphite base munzvimbo yekushandisa michina yeMOCVD, graphite base surface coating inofanira kusangana nehunhu hunotevera:
(1) Hwaro hwegirafiti hunogona kuputirwa zvizere, uye huwandu hwayo hwakanaka, zvikasadaro hwaro hwegirafiti hunogona kusviba nyore nyore mugasi rinoparadza.
(2) Simba rekubatana nechigadziko chegirafiti rakakwirira kuitira kuti chifukidziro chisadonha nyore nyore mushure mekutenderera kwakawanda kwekupisa kwakanyanya uye kupisa kwakaderera.
(3) Ine kugadzikana kwakanaka kwemakemikari kudzivirira kutadza kwekuputira kana tembiricha yakakwira uye mhepo inoparadza.
SiC ine zvakanakira zvekudzivirira ngura, kufambisa kupisa kwakanyanya, kuramba kupisa kunopisa uye kugadzikana kwemakemikari zvakanyanya, uye inogona kushanda zvakanaka mumhepo yeGaN epitaxial. Pamusoro pezvo, thermal expansion coefficient yeSiC yakasiyana zvishoma neya graphite, saka SiC ndiyo chinhu chinodiwa pakuputira pamusoro pe graphite base.
Parizvino, SiC yakajairika inonyanya kuve ye3C, 4H uye 6H, uye mashandisirwo eSiC emhando dzakasiyana dzekristaro akasiyana. Semuenzaniso, 4H-SiC inogona kugadzira zvishandiso zvine simba guru; 6H-SiC ndiyo yakagadzikana zvakanyanya uye inogona kugadzira zvishandiso zvemagetsi; Nekuda kwechimiro chayo chakafanana neGaN, 3C-SiC inogona kushandiswa kugadzira GaN epitaxial layer uye kugadzira zvishandiso zveSiC-GaN RF. 3C-SiC inozivikanwawo seβ-SiC, uye kushandiswa kwakakosha kweβ-SiC ndeyefirimu uye zvinhu zvekuputira, saka β-SiC parizvino ndiyo chinhu chikuru chekuputira.
Nzira yekugadzira silicon carbide coating
Parizvino, nzira dzekugadzirira SiC coating dzinosanganisira nzira yegel-sol, nzira yekuisa, nzira yekuvhara brush coating, nzira yekuisa plasma spraying, nzira yemakemikari gas reaction (CVR) uye nzira yekuisa chemical vapor deposition (CVD).
Nzira yekuisa zvinhu:
Nzira iyi imhando yekupisa kwakanyanya, iyo inonyanya kushandisa musanganiswa weupfu hweSi neupfu hweC seupfu hwekuisa, graphite matrix inoiswa muupfu hwekuisa, uye kupisa kwakanyanya kunoitwa mugasi risina simba, uye pakupedzisira SiC coating inowanikwa pamusoro pematrix egraphite. Maitiro acho ari nyore uye musanganiswa pakati pecoating ne substrate wakanaka, asi kufanana kwecoating munzira yekukora kwakashata, izvo zviri nyore kugadzira maburi akawanda uye zvinotungamira mukusagadzikana kwe oxidation.
Nzira yekuputira bhurashi:
Nzira yekuputira bhurashi inonyanya kukwesha zvinhu zvakachekwa pamusoro pegraphite matrix, wozopukuta zvinhu zvakachekwa patembiricha yakati kuti ugadzirire kupfeka. Maitiro acho ari nyore uye mutengo wakaderera, asi kupfeka kwakagadzirwa nenzira yekuputira bhurashi hakuna kusimba kana kwakabatana ne substrate, kufanana kwekupenda hakuna kunaka, kupfeka kwacho kwakatetepa uye kuramba kwe oxidation kwakaderera, uye dzimwe nzira dzinodiwa kuti dzibatsire.
Nzira yekupfapfaidza muplasma:
Nzira yekupfapfaidza plasma inonyanya kushandiswa kupfapfaidza zvinhu zvakanyungudutswa kana kuti zvakanyungudutswa zvishoma pamusoro pegraphite matrix nepfuti yeplasma, uye yozosimba uye yobatana kuti iite coating. Nzira iyi iri nyore kushandisa uye inogona kugadzirira silicon carbide coating yakakora, asi silicon carbide coating yakagadzirwa nenzira iyi inowanzova isina simba uye inotungamira mukusasimba kwe oxidation, saka inowanzo shandiswa kugadzirira SiC composite coating kuti ivandudze kunaka kwe coating.
Nzira yegel-sol:
Nzira yegel-sol inonyanya kugadzira mhinduro yakafanana uye yakajeka inofukidza pamusoro pematrix, yooma kuita gel uye yozopiswa kuti pave nependi. Nzira iyi iri nyore kushandisa uye inodhura zvishoma, asi pendi inogadzirwa ine zvimwe zvikanganiso zvakaita sekusagadzikana kwekupisa uye kutsemuka kuri nyore, saka haigone kushandiswa zvakanyanya.
Kuitika kweGasi reKemikari (CVR):
CVR inonyanya kugadzira SiC coating nekushandisa Si neSiO2 powder kugadzira SiO2 steam pakupisa kwakanyanya, uye kutevedzana kwemakemikari kunoitika pamusoro peC material substrate. SiC coating yakagadzirwa nenzira iyi yakabatana zvakanyanya nesubstrate, asi tembiricha yereaction yakakwira uye mutengo wakakwira.
Kubviswa kweUtsi hweMakemikari (CVD):
Parizvino, CVD ndiyo tekinoroji huru yekugadzira SiC coating pamusoro pe substrate. Maitiro makuru inyaya yezviitiko zvemuviri nemakemikari zve gas phase reactant pamusoro pe substrate, uye pakupedzisira SiC coating inogadzirwa nekuiswa pamusoro pe substrate. SiC coating yakagadzirwa neCVD technology yakabatana zvakanyanya nepamusoro pe substrate, izvo zvinogona kuvandudza zvinobudirira oxidation resistance uye ablative resistance ye substrate material, asi nguva yekuiswa kweiyi nzira yakareba, uye reaction gas ine imwe chepfu gasi.
Mamiriro emusika weSiC coated graphite base
Vagadziri vekune dzimwe nyika pavakatanga kare, vaive nehutungamiriri hwakajeka uye mugove wepamusoro pamusika. Pasi rese, vatengesi vakuru veSiC coated graphite base ndiDutch Xycard, Germany SGL Carbon (SGL), Japan Toyo Carbon, United States MEMC nedzimwe makambani, ayo ari mumusika wepasi rose. Kunyangwe China yakabudirira kuburikidza nehunyanzvi hwakakosha hwekukura kwakafanana kweSiC coating pamusoro pegraphite matrix, graphite matrix yemhando yepamusoro ichiri kuvimba neGerman SGL, Japan Toyo Carbon nedzimwe makambani, graphite matrix inopihwa nemakambani emuno inokanganisa hupenyu hwebasa nekuda kwekupisa, elastic modulus, rigid modulus, lattice defects nezvimwe zvinetso zvemhando. Midziyo yeMOCVD haigone kusangana nezvinodiwa zvekushandisa SiC coated graphite base.
Indasitiri ye semiconductor yeChina iri kukura nekukurumidza, nekuwedzera zvishoma nezvishoma kwehuwandu hweMOCVD epitaxial equipment localization rate, uye kuwedzera kwemamwe ma process application, musika wezvigadzirwa zve SiC coated graphite base unotarisirwa kukura nekukurumidza. Sekureva kwefungidziro dzekutanga dzeindasitiri, musika we graphite base wemuno uchapfuura mamiriyoni mazana mashanu eyuan mumakore mashoma anotevera.
SiC coated graphite base ndiyo chinhu chikuru chemichina yekugadzira maindasitiri ye compound semiconductor, kugona tekinoroji huru yekugadzira nekugadzira kwayo, uye kuona kuti zvinhu zvose zvakagadzirwa-maitiro-midziyo zviri munzvimbo yazvo zvakakosha zvikuru pakuona kuti indasitiri ye semiconductor yeChina iri kukura. Basa rekugadzira graphite yeSiC coated base yemumba riri kukura, uye mhando yechigadzirwa inogona kusvika padanho repamusoro-soro munguva pfupi iri kutevera.
Nguva yekutumira: Chikunguru-24-2023