SiC yakavharidzirwa mabhesi egraphite anowanzo kushandiswa kutsigira uye kupisa imwe crystal substrates musimbi-organic chemical vapor deposition (MOCVD) midziyo. Kugadzikana kwekupisa, kufanana kwekupisa uye mamwe maparamendi eSiC akavharidzirwa graphite base anoita basa rakasimba mumhando ye epitaxial zvinhu kukura, saka ndiyo yakakosha chikamu cheMOCVD michina.
Mukuita kwekugadzira wafer, epitaxial layers inovakwazve pane mamwe wafer substrates kufambisa kugadzirwa kwemidziyo. Yakajairika LED mwenje-emitting michina inoda kugadzirira epitaxial layers yeGaAs pane silicon substrates; Iyo SiC epitaxial layer inokura pane conductive SiC substrate yekuvakwa kwemidziyo yakadai seSBD, MOSFET, nezvimwewo, kune yakakwira voltage, yakakwira ikozvino uye mamwe magetsi ekushandisa; GaN epitaxial layer inovakwa pane semi-insulated SiC substrate kuti ienderere mberi nekuvaka HEMT nemimwe michina yeRF application senge kutaurirana. Iyi nzira haiparadzaniswe kubva kuCVD michina.
Mumidziyo yeCVD, iyo substrate haigone kuiswa zvakananga pasimbi kana kungoiswa pachigadziko che epitaxial deposition, nekuti inosanganisira kuyerera kwegasi (yakatwasuka, yakatwasuka), tembiricha, kudzvanywa, kugadzirisa, kudurura zvinosvibisa uye zvimwe zvinhu zvinokonzeresa. Nokudaro, chigadziko chinodiwa, uye ipapo substrate inoiswa pa diski, uye ipapo epitaxial deposition inoitwa pane substrate uchishandisa CVD teknolojia, uye iyi nheyo ndiyo SiC yakavharidzirwa graphite base (inozivikanwawo setireyi).
SiC yakavharidzirwa mabhesi egraphite anowanzo kushandiswa kutsigira uye kupisa imwe crystal substrates musimbi-organic chemical vapor deposition (MOCVD) midziyo. Kugadzikana kwekupisa, kufanana kwekupisa uye mamwe maparamendi eSiC akavharidzirwa graphite base anoita basa rakasimba mumhando ye epitaxial zvinhu kukura, saka ndiyo yakakosha chikamu cheMOCVD michina.
Metal-organic chemical vapor deposition (MOCVD) ndiyo tekinoroji yakakura yekukura epitaxial kwemafirimu eGaN mublue LED. Iyo ine mabhenefiti ekushanda kuri nyore, kudzoreka kukura mwero uye kuchena kwakanyanya kwemafirimu eGaN. Sechikamu chakakosha mukamuri yekupindura yeMOCVD midziyo, iyo inotakura base inoshandiswa kuGaN film epitaxial kukura inoda kuva nezvakanakira kupisa kwekushisa kwepamusoro, yunifomu yekushisa conductivity, kunaka kwemakemikari kugadzikana, kusimba kwekupisa kwekushisa, etc. Graphite zvinhu zvinogona kusangana nemamiriro ezvinhu ari pamusoro apa.
Seimwe yezvikamu zvakakosha zveMOCVD midziyo, graphite base ndiyo inotakura uye inodziya muviri weiyo substrate, iyo inonyatso tarisa kufanana uye kuchena kweiyo firimu zvinhu, saka kunaka kwayo kunokanganisa zvakananga kugadzirira kwepepa epitaxial, uye panguva imwe chete, nekuwedzera kwenhamba yekushandiswa uye shanduko yemamiriro ekushanda, zviri nyore kwazvo kupfeka, zvezvinhu zvinodyiwa.
Kunyange zvazvo girafu ine yakanakisa yekupisa conductivity uye kugadzikana, ine mukana wakanaka sechikamu chechikamu cheMOCVD midziyo, asi mukugadzirwa kwekugadzira, graphite ichaparadza hupfu nekuda kwekusara kwegasi rinopisa uye zvisikwa zvesimbi, uye hupenyu hwebasa re graphite base huchaderedzwa zvikuru. Panguva imwecheteyo, kudonha kwe graphite powder kunokonzera kusvibiswa kune chip.
Kubuda kwekombiki tekinoroji kunogona kupa pamusoro pehupfu kugadzirisa, kuwedzera kupisa conductivity, uye kuenzana kupisa kugovera, iyo yave iyo huru tekinoroji yekugadzirisa dambudziko iri. Graphite base muMOCVD midziyo yekushandisa nharaunda, graphite base yekumusoro coating inofanirwa kusangana neanotevera maitiro:
(1) Chigadziko chegraphite chinogona kuputirwa zvizere, uye density yakanaka, kana zvisina kudaro girafu chigadziko chiri nyore kuputirwa mugasi rinopisa.
(2) Iko kusanganiswa kwesimba neiyo graphite base yakakwira kuti ive nechokwadi chekuti kupfekedza hakusi nyore kudonha mushure mekuwedzera tembiricha uye kuderera kwekushisa kutenderera.
(3) Iine kugadzikana kwakanaka kwekemikari kudzivirira kukanganisa kwekuputira mukupisa kwakanyanya uye mhepo inoparadza.
SiC ine zvakanakira corrosion resistance, high thermal conductivity, thermal shock resistance uye high chemical stability, uye inogona kushanda zvakanaka muGaN epitaxial atmosphere. Uye zvakare, iyo yekupisa yekuwedzera coefficient yeSiC inosiyana zvishoma kubva kune iyo yegraphite, saka SiC ndiyo inosarudzirwa zvinhu zvekuputira pamusoro pegraphite base.
Parizvino, iyo yakajairika SiC inonyanya 3C, 4H uye 6H mhando, uye iyo SiC inoshandisa emhando dzakasiyana dzekristaro dzakasiyana. Semuenzaniso, 4H-SiC inogona kugadzira michina ine simba guru; 6H-SiC ndiyo yakanyanya kugadzikana uye inogona kugadzira mapikicha emagetsi; Nekuda kwechimiro chayo chakafanana neGaN, 3C-SiC inogona kushandiswa kugadzira GaN epitaxial layer uye kugadzira SiC-GaN RF zvishandiso. 3C-SiC inowanzonziwo β-SiC, uye kushandiswa kwakakosha kwe β-SiC kwakafanana nefirimu uye kupfekedza zvinhu, saka β-SiC ikozvino ndiyo inonyanya kushandiswa kwekugadzira.
Nzira yekugadzira silicon carbide coating
Parizvino, nzira dzekugadzirira dzeSiC coating dzinonyanya kusanganisira gel-sol nzira, embedding method, brush coating method, plasma spraying method, chemical gas reaction method (CVR) uye chemical vapor deposition method (CVD).
Embedding nzira:
Iyo nzira imhando yemhando yepamusoro tembiricha yakasimba chikamu sintering, iyo inonyanya kushandisa musanganiswa weSi poda uye C hupfu sehupfu hwekumisikidza, iyo graphite matrix inoiswa muupfu hwekuisa, uye tembiricha yekupisa inoitwa muinert gasi, uye pakupedzisira iyo SiC coating inowanikwa pamusoro peiyo graphite matrix. Iyo nzira iri nyore uye musanganiswa pakati pekuputira neiyo substrate yakanaka, asi kufanana kwejasi pamwe negwara reukobvu hakuna kunaka, izvo zviri nyore kuburitsa mamwe maburi uye zvinotungamira mukusagadzikana oxidation kuramba.
Brush coating nzira:
Iyo bhurashi yekubikira nzira inonyanya kukwesha mvura yakasvibirira pamusoro peiyo graphite matrix, uye wobva warapa iyo mbishi pane imwe tembiricha kugadzirira iyo coating. Iyo nzira iri nyore uye mutengo wakaderera, asi iyo yekupfekedza yakagadzirwa nebrashi yekubikira nzira haina kusimba pamwe chete neiyo substrate, iyo yekupfeka yakafanana haina kunaka, iyo yekupfeka itete uye oxidation kuramba yakaderera, uye dzimwe nzira dzinodiwa kuibatsira.
Plasma spraying nzira:
Iyo plasma yekupfapfaidza nzira inonyanya kupfapfaidza yakanyunguduka kana semi-yakanyunguduka mbishi pamusoro peiyo graphite matrix nepfuti yeplasma, uye wobva waomesa uye sunga kuti uite coating. Iyo nzira iri nyore kushandisa uye inogona kugadzirira yakaomesesa silicon carbide coating, asi iyo silicon carbide coating yakagadzirwa neiyo nzira kazhinji haina kusimba uye inotungamira kune isina kusimba oxidation kuramba, saka inowanzo shandiswa kugadzirira kweSiC composite coating kuvandudza kunaka kwekupfeka.
Gel-sol nzira:
Iyo gel-sol nzira inonyanya kugadzirira yunifomu uye yakajeka sol mhinduro inovhara pamusoro pematrix, ichiomesa kuita gel uyezve sinter kuti iwane yekuputira. Iyi nzira iri nyore kushandisa uye yakaderera mumutengo, asi iyo yekupfeka inogadzirwa ine zvimwe zvikanganiso senge yakaderera thermal shock resistance uye nyore kuputika, saka haigone kushandiswa zvakanyanya.
Chemical Gas Reaction (CVR) :
CVR inonyanya kugadzira SiC coating nekushandisa Si uye SiO2 poda kugadzira SiO chiutsi pakupisa kwakanyanya, uye nhevedzano yemakemikari reactions inoitika pamusoro peC material substrate. Iyo SiC coating yakagadzirirwa neiyi nzira yakanyatso sungirirwa kune substrate, asi maitiro tembiricha akakwira uye mutengo wakakwira.
Chemical Vapor Deposition (CVD):
Parizvino, CVD ndiyo tekinoroji huru yekugadzirira SiC coating pane substrate pamusoro. Iyo huru maitiro ndeyekutevedzana kwemuviri uye kemikari maitiro egasi chikamu chinogadzirisa zvinhu pane substrate pamusoro, uye pakupedzisira iyo SiC coating inogadzirirwa nekuisa pane substrate pamusoro. Iyo SiC coating yakagadzirirwa neCVD tekinoroji yakanyatso sunganidzwa kumusoro kweiyo substrate, iyo inogona zvinobudirira kuvandudza oxidation kuramba uye ablative kuramba kweiyo substrate zvinhu, asi nguva yekuisa nzira iyi yakareba, uye gasi rekuita rine imwe muchetura gasi.
Mamiriro emusika weSiC yakavharwa graphite base
Apo vagadziri vekunze vakatanga kutanga, vaive nemutungamiri wakajeka uye mugove wemusika wepamusoro. Pasi rose, vatengesi vakuru veSiC yakavharwa graphite base iDutch Xycard, Germany SGL Carbon (SGL), Japan Toyo Carbon, iyo United States MEMC nemamwe makambani, ayo anonyanya kutora musika wepasirese. Kunyangwe China yakatyora iyo yakakosha tekinoroji yekukura kweyunifomu yeSiC coating pamusoro pegraphite matrix, yemhando yepamusoro graphite matrix ichiri kuvimba neGerman SGL, Japan Toyo Carbon nemamwe mabhizinesi, iyo graphite matrix inopiwa nemabhizinesi epamba inokanganisa hupenyu hwesevhisi nekuda kwekupisa kwekupisa, elastic modulus, rigid modulus uye mamwe matambudziko emhando. Iyo MOCVD midziyo haigone kusangana nezvinodiwa zvekushandiswa kweSiC yakavharwa graphite base.
Indasitiri yeChina semiconductor iri kusimukira nekukurumidza, nekuwedzera zvishoma nezvishoma kweMOCVD epitaxial michina yenzvimbo, uye mamwe maitiro ekuwedzera maapplication, iyo remangwana SiC yakavharwa graphite base chigadzirwa musika inotarisirwa kukura nekukurumidza. Zvinoenderana nefungidziro yeindasitiri yekutanga, musika wepasi graphite base uchapfuura 500 miriyoni yuan mumakore mashoma anotevera.
SiC yakavharwa graphite base ndiyo yakakosha chikamu checompound semiconductor maindasitiri emidziyo, kugona iyo yakakosha tekinoroji yekugadzirwa kwayo nekugadzira, uye kuona kuiswa kweiyo mbishi zvinhu-process-equipment indasitiri cheni ine hunyanzvi hwekukosha kwekuona budiriro yeChina semiconductor indasitiri. Munda weSiC yakavharwa graphite base iri kuwedzera, uye mhando yechigadzirwa inogona kusvika padanho repamusoro repasirese munguva pfupi.
Nguva yekutumira: Jul-24-2023