Iziseko zegrafiti ezigqunywe yiSiC zisetyenziswa rhoqo ukuxhasa nokufudumeza ii-substrates zekristale enye kwizixhobo ze-metal-organic chemical vapor deposition (MOCVD). Uzinzo lobushushu, ukufana kobushushu kunye nezinye iiparameter zokusebenza kwesiseko segrafiti esigqunywe yiSiC zidlala indima ebalulekileyo kumgangatho wokukhula kwezinto ze-epitaxial, ngoko ke yinxalenye ephambili yezixhobo zeMOCVD.
Kwinkqubo yokwenziwa kwe-wafer, iileya ze-epitaxial zakhiwa ngakumbi kwezinye ii-wafer substrates ukuze kube lula ukwenziwa kwezixhobo. Izixhobo eziqhelekileyo ezikhupha ukukhanya kwe-LED kufuneka zilungiselele iileya ze-epitaxial ze-GaAs kwi-silicon substrates; Ileya ye-epitaxial ye-SiC ikhuliswa kwi-substrate ye-conductive SiC yokwakha izixhobo ezifana ne-SBD, i-MOSFET, njl.njl., ze-voltage ephezulu, i-current ephezulu kunye nezinye izicelo zamandla; Ileya ye-epitaxial ye-GaN yakhiwe kwi-substrate ye-SiC e-insulated ukuze kwakhiwe ngakumbi i-HEMT kunye nezinye izixhobo ze-RF applications ezifana nonxibelelwano. Le nkqubo ayinakwahlulwa kwizixhobo ze-CVD.
Kwizixhobo ze-CVD, i-substrate ayinakubekwa ngqo kwisinyithi okanye ibekwe nje kwisiseko sokufakwa kwe-epitaxial, kuba ibandakanya ukuhamba kwegesi (ethe tye, ethe nkqo), ubushushu, uxinzelelo, ukuqina, ukuchitheka kokungcola kunye nezinye izinto ezichaphazelayo. Ke ngoko, kufuneka isiseko, kwaye emva koko i-substrate ibekwe kwidiski, kwaye emva koko ukufakwa kwe-epitaxial kwenziwa kwi-substrate kusetyenziswa ubuchwepheshe be-CVD, kwaye esi siseko sisiseko se-graphite esifakwe i-SiC (esaziwa ngokuba yi-tray).
Iziseko zegrafiti ezigqunywe yiSiC zisetyenziswa rhoqo ukuxhasa nokufudumeza ii-substrates zekristale enye kwizixhobo ze-metal-organic chemical vapor deposition (MOCVD). Uzinzo lobushushu, ukufana kobushushu kunye nezinye iiparameter zokusebenza kwesiseko segrafiti esigqunywe yiSiC zidlala indima ebalulekileyo kumgangatho wokukhula kwezinto ze-epitaxial, ngoko ke yinxalenye ephambili yezixhobo zeMOCVD.
I-Metal-organic chemical vapor deposition (MOCVD) yeyona teknoloji iphambili yokukhula kwe-epitaxial yeefilimu ze-GaN kwi-LED eluhlaza okwesibhakabhaka. Inezibonelelo zokusebenza okulula, izinga lokukhula elilawulekayo kunye nobunyulu obuphezulu beefilimu ze-GaN. Njengenxalenye ebalulekileyo kwigumbi lokusabela lezixhobo ze-MOCVD, isiseko seebheringi esisetyenziselwa ukukhula kwe-epitaxial yefilimu ye-GaN kufuneka sibe neenzuzo zokumelana nobushushu obuphezulu, ukuqhuba kobushushu obufanayo, ukuzinza okuhle kweekhemikhali, ukumelana okunamandla kobushushu, njl. Izinto zeGraphite zinokuhlangabezana neemeko ezingentla.
Njengenye yezona zinto ziphambili kwizixhobo ze-MOCVD, isiseko segrafiti sisithwali kunye nomzimba wokufudumeza we-substrate, nto leyo emisela ngokuthe ngqo ukufana kunye nobunyulu bezinto zefilimu, ngoko ke umgangatho wayo uchaphazela ngokuthe ngqo ukulungiswa kwephepha le-epitaxial, kwaye kwangaxeshanye, ngokwanda kwenani lokusetyenziswa kunye notshintsho lweemeko zokusebenza, kulula kakhulu ukuyinxiba, iyinxalenye yezinto ezisetyenziswayo.
Nangona i-graphite inomoya oqhuba kakuhle wobushushu kunye nozinzo, inenzuzo enkulu njengesiseko sezixhobo ze-MOCVD, kodwa kwinkqubo yokuvelisa, i-graphite iya kuyidla ipowder ngenxa yentsalela yeegesi ezirhabaxa kunye nezinto eziphilayo zesinyithi, kwaye ubomi benkonzo yesiseko se-graphite buya kuncipha kakhulu. Kwangaxeshanye, umgubo we-graphite owelayo uya kubangela ungcoliseko kwi-chip.
Ukuvela kwetekhnoloji yokugquma kunokubonelela ngokulungiswa komgubo womphezulu, kuphucule ukuhanjiswa kobushushu, kwaye kulingane nokusasazwa kobushushu, nto leyo eye yaba yitekhnoloji ephambili yokusombulula le ngxaki. Isiseko segrafiti kwindawo yokusetyenziswa kwezixhobo ze-MOCVD, ukugquma komgangatho wegrafiti kufuneka kuhlangabezane nezi mpawu zilandelayo:
(1) Isiseko segrafiti singasongwa ngokupheleleyo, kwaye uxinano lulungile, kungenjalo isiseko segrafiti kulula ukusilahla kwigesi ebolileyo.
(2) Amandla okudibanisa nesiseko segrafiti aphezulu ukuqinisekisa ukuba ulusu alulula ukuwa emva kwemijikelo emininzi yobushushu obuphezulu kunye nobushushu obuphantsi.
(3) Izinzile kakuhle kwiikhemikhali ukuze iphephe ukungaphumeleli kokwaleka kwiqondo lobushushu eliphezulu kunye nomoya odlayo.
I-SiC ineengenelo zokuxhathisa ukugqwala, ukuqhuba okuphezulu kobushushu, ukumelana noxinzelelo lobushushu kunye nokuzinza okuphezulu kweekhemikhali, kwaye ingasebenza kakuhle kwi-atmosphere ye-GaN epitaxial. Ukongeza, i-coefficient yokwandisa ubushushu ye-SiC yahlukile kancinci kwi-graphite, ngoko ke i-SiC yeyona nto ikhethwayo yokugquma umphezulu wesiseko se-graphite.
Okwangoku, iSiC eqhelekileyo ikakhulu luhlobo lwe-3C, 4H kunye ne-6H, kwaye ukusetyenziswa kweSiC kwiintlobo ezahlukeneyo zekristale kwahlukile. Umzekelo, i-4H-SiC inokuvelisa izixhobo ezinamandla aphezulu; i-6H-SiC yeyona izinzileyo kwaye inokuvelisa izixhobo ze-photoelectric; Ngenxa yesakhiwo sayo esifana neGaN, i-3C-SiC ingasetyenziselwa ukuvelisa umaleko we-epitaxial weGaN kunye nokuvelisa izixhobo ze-SiC-GaN RF. I-3C-SiC ikwabizwa ngokuba yi-β-SiC, kwaye ukusetyenziswa okubalulekileyo kwe-β-SiC kukusetyenziswa kwefilimu kunye nezinto zokugquma, ngoko ke i-β-SiC okwangoku yeyona nto iphambili yokugquma.
Indlela yokulungiselela i-silicon carbide coating
Okwangoku, iindlela zokulungiselela i-SiC coating ziquka ikakhulu indlela ye-gel-sol, indlela yokufaka, indlela yokugquma ngebrashi, indlela yokutshiza nge-plasma, indlela yokusabela ngegesi yekhemikhali (CVR) kunye nendlela yokufumba umphunga wekhemikhali (CVD).
Indlela yokushumeka:
Le ndlela luhlobo lokusinta i-phase solid solid temperature high, olusebenzisa kakhulu umxube we-Si powder kunye ne-C powder njengomgubo wokusinta, i-graphite matrix ifakwa kwi-embedding powder, kwaye i-high temperature sintering yenziwa kwi-inert gas, kwaye ekugqibeleni i-SiC coating ifumaneka kumphezulu we-graphite matrix. Le nkqubo ilula kwaye indibaniselwano phakathi kwe-coating kunye ne-substrate ilungile, kodwa ukufana kwe-coating kwicala lobukhulu ayilunganga, nto leyo elula ukuvelisa imingxuma emininzi kwaye ikhokelela ekuchaseni i-oxidation kakubi.
Indlela yokugquma ngebrashi:
Indlela yokugquma ngebrashi ikakhulu kukugquma izinto eziluhlaza ezingamanzi kumphezulu we-graphite matrix, uze emva koko ulungise izinto eziluhlaza kubushushu obuthile ukulungiselela ukugquma. Le nkqubo ilula kwaye ixabiso liphantsi, kodwa ukugquma okulungiselelwe ngendlela yokugquma ngebrashi kubuthathaka xa kudityaniswe ne-substrate, ukufana kokugquma akukuhle, ukugquma kuncinci kwaye ukumelana nokuxinana kwe-oxidation kuphantsi, kwaye kufuneka ezinye iindlela zokukunceda.
Indlela yokutshiza ngeplasma:
Indlela yokutshiza ngeplasma ikakhulu kukutshiza izinto eziluhlaza ezinyibilikisiweyo okanye ezinyibilikisiweyo kancinci kumphezulu we-graphite matrix nge-plasma gun, uze emva koko ziqine kwaye zihlangane ukuze zenze i-coating. Le ndlela ilula ukuyisebenzisa kwaye ingalungiselela i-silicon carbide coating exineneyo, kodwa i-silicon carbide coating elungiselelwe yile ndlela idla ngokuba buthathaka kakhulu kwaye ikhokelela ekuchaseni okubuthathaka kwe-oxidation, ngoko ke isetyenziswa ngokubanzi ekulungiseleleni i-SiC composite coating ukuphucula umgangatho we-coating.
Indlela ye-gel-sol:
Indlela ye-gel-sol ikakhulu kukulungiselela isisombululo se-sol esifanayo nesicacileyo esigubungela umphezulu we-matrix, somise sibe yi-gel size sitshise ukuze kufunyanwe i-coating. Le ndlela ilula ukuyisebenzisa kwaye ixabisa kancinci, kodwa i-coating eveliswayo ineentsilelo ezithile ezifana nokumelana nobushushu obuphantsi kunye nokuqhekeka okulula, ngoko ke ayinakusetyenziswa kakhulu.
I-Chemical Gas Reaction (CVR):
I-CVR ikakhulu ivelisa i-SiC coating ngokusebenzisa umgubo we-Si kunye ne-SiO2 ukuvelisa umphunga we-SiO kubushushu obuphezulu, kwaye uthotho lweempendulo zeekhemikhali lwenzeka kumphezulu we-substrate yezinto ze-C. I-SiC coating elungiselelwe ngale ndlela inamathelene kakhulu ne-substrate, kodwa ubushushu bokusabela buphezulu kwaye iindleko ziphezulu.
Ukususwa koMphunga weKhemikhali (i-CVD):
Okwangoku, i-CVD yeyona teknoloji iphambili yokulungiselela ukubekwa kwe-SiC kumphezulu we-substrate. Inkqubo ephambili luchungechunge lweempendulo zomzimba nezekhemikhali zezinto ezisabelayo kwi-gas phase kumphezulu we-substrate, kwaye ekugqibeleni ukubekwa kwe-SiC kulungiselelwa ngokubeka kumphezulu we-substrate. Ukubekwa kwe-SiC okulungiselelwe yi-CVD technology kunamathele ngokusondeleyo kumphezulu we-substrate, nto leyo enokuphucula ngempumelelo ukumelana ne-oxidation kunye nokumelana nokungaguquguquki kwezinto ze-substrate, kodwa ixesha lokubekwa kwale ndlela lide, kwaye igesi yokusabela inegesi ethile enobuthi.
Imeko yemarike yesiseko segrafiti esigqunywe yiSiC
Xa abavelisi bamanye amazwe baqala kwangethuba, babenenkokheli ecacileyo kunye nesabelo esiphezulu kwimarike. Kumazwe ngamazwe, abathengisi abaphambili besiseko segrafiti esifakwe iSiC yiDutch Xycard, iGermany SGL Carbon (SGL), iJapan Toyo Carbon, i-United States MEMC kunye nezinye iinkampani, ezihlala kwimarike yamazwe ngamazwe. Nangona iTshayina idlule kwitekhnoloji ephambili yokukhula okufanayo kwe-SiC coating kumphezulu we-graphite matrix, i-graphite matrix esemgangathweni ophezulu isaxhomekeke kwi-German SGL, iJapan Toyo Carbon kunye namanye amashishini, i-graphite matrix enikezelwa ngamashishini asekhaya ichaphazela ubomi benkonzo ngenxa yokuqhuba kobushushu, i-elastic modulus, i-rigid modulus, iziphene ze-lattice kunye nezinye iingxaki zomgangatho. Izixhobo ze-MOCVD azikwazi ukuhlangabezana neemfuno zokusetyenziswa kwesiseko segrafiti esifakwe iSiC.
Ishishini le-semiconductor laseTshayina likhula ngokukhawuleza, ngokonyuka kancinci kwesantya sokufakwa kwezixhobo ze-epitaxial ze-MOCVD, kunye nokwandiswa kwezinye iinkqubo zokusebenza, kulindeleke ukuba imakethi yemveliso yesiseko segrafiti egqunywe yiSiC kwixesha elizayo ikhule ngokukhawuleza. Ngokweqikelelo lokuqala lweshishini, imakethi yesiseko segrafiti yasekhaya iya kudlula i-500 yezigidi zeeyuan kwiminyaka embalwa ezayo.
Isiseko segrafiti esigqunywe yiSiC siyinxalenye ephambili yezixhobo zoshishino lwe-compound semiconductor, ukuqonda iteknoloji ephambili yemveliso kunye nemveliso yayo, kunye nokuqonda indawo yecandelo lonke leshishini lezixhobo ze-raw material-process-equipment kubaluleke kakhulu ekuqinisekiseni uphuhliso lweshishini le-semiconductor laseTshayina. Intsimi yesiseko segrafiti esigqunywe yiSiC yasekhaya iyachuma, kwaye umgangatho wemveliso unokufikelela kwinqanaba eliphezulu lamazwe ngamazwe kungekudala.
Ixesha leposi: Julayi-24-2023