Izisekelo ze-graphite ezimbozwe yi-SiC zivame ukusetshenziselwa ukusekela nokushisa ama-substrate e-single crystal emishinini ye-metal-organic chemical vapor deposition (MOCVD). Ukuzinza kokushisa, ukufana kokushisa kanye nezinye izilinganiso zokusebenza kwesisekelo se-graphite esimbozwe yi-SiC kudlala indima ebalulekile ekhwalithini yokukhula kwezinto ze-epitaxial, ngakho-ke yingxenye eyinhloko yemishini ye-MOCVD.
Enkambisweni yokukhiqiza i-wafer, izendlalelo ze-epitaxial zakhiwa kabanzi kwezinye izisendlalelo ze-wafer ukuze kube lula ukukhiqizwa kwamadivayisi. Amadivayisi ajwayelekile akhipha ukukhanya kwe-LED adinga ukulungiselela izendlalelo ze-epitaxial ze-GaAs kuma-substrate e-silicon; Isendlalelo se-epitaxial se-SiC sikhulela ku-substrate ye-conductive SiC ukuze kwakhiwe amadivayisi afana ne-SBD, i-MOSFET, njll., ukuze kusetshenziswe i-voltage ephezulu, i-current ephezulu kanye nezinye izinhlelo zokusebenza zamandla; Isendlalelo se-epitaxial se-GaN sakhiwe ku-substrate ye-SiC e-semi-insulated ukuze kwakhiwe i-HEMT kanye namanye amadivayisi ezinhlelo zokusebenza ze-RF njengokuxhumana. Le nqubo ayihlukaniseki nemishini ye-CVD.
Emishinini ye-CVD, i-substrate ayikwazi ukubekwa ngqo ensimbini noma ibekwe nje esisekelweni sokufakwa kwe-epitaxial, ngoba ihilela ukugeleza kwegesi (okuvundlile, okuqondile), izinga lokushisa, ingcindezi, ukuqina, ukuchithwa kokungcola kanye nezinye izici zezinto ezithonya. Ngakho-ke, kudingeka isisekelo, bese i-substrate ibekwa kudiski, bese ukufakwa kwe-epitaxial kwenziwa ku-substrate kusetshenziswa ubuchwepheshe be-CVD, futhi lesi sisekelo siyisisekelo se-graphite esimbozwe yi-SiC (esaziwa nangokuthi ithreyi).
Izisekelo ze-graphite ezimbozwe yi-SiC zivame ukusetshenziselwa ukusekela nokushisa ama-substrate e-single crystal emishinini ye-metal-organic chemical vapor deposition (MOCVD). Ukuzinza kokushisa, ukufana kokushisa kanye nezinye izilinganiso zokusebenza kwesisekelo se-graphite esimbozwe yi-SiC kudlala indima ebalulekile ekhwalithini yokukhula kwezinto ze-epitaxial, ngakho-ke yingxenye eyinhloko yemishini ye-MOCVD.
Ukufakwa komphunga wamakhemikhali ensimbi-organic (i-MOCVD) ubuchwepheshe obujwayelekile bokukhula kwe-epitaxial kwamafilimu e-GaN ku-LED eluhlaza okwesibhakabhaka. Inezinzuzo zokusebenza okulula, izinga lokukhula elilawulekayo kanye nokuhlanzeka okuphezulu kwamafilimu e-GaN. Njengengxenye ebalulekile ekamelweni lokusabela lemishini ye-MOCVD, isisekelo sokuthwala esisetshenziselwa ukukhula kwe-epitaxial yefilimu ye-GaN sidinga ukuba nezinzuzo zokumelana nokushisa okuphezulu, ukuqhuba ukushisa okufanayo, ukuzinza okuhle kwamakhemikhali, ukumelana okunamandla kokushaqeka kokushisa, njll. Izinto ze-Graphite zingahlangabezana nezimo ezingenhla.
Njengenye yezingxenye eziyinhloko zemishini ye-MOCVD, isisekelo se-graphite siyisithwali kanye nomzimba wokushisa we-substrate, okunquma ngqo ukufana kanye nobumsulwa bezinto zefilimu, ngakho ikhwalithi yayo ithinta ngqo ukulungiswa kweshidi le-epitaxial, futhi ngesikhathi esifanayo, ngokwanda kwenani lokusetshenziswa kanye nokushintsha kwezimo zokusebenza, kulula kakhulu ukuyigqoka, okungokwezinto ezisetshenziswayo.
Nakuba i-graphite inokushisa okuhle kakhulu kanye nokuzinza, inenzuzo enhle njengengxenye eyisisekelo yemishini ye-MOCVD, kodwa enqubweni yokukhiqiza, i-graphite izogqwala i-powder ngenxa yezinsalela zamagesi agqwalisayo kanye nezinto eziphilayo zensimbi, futhi impilo yesevisi yesisekelo se-graphite izoncishiswa kakhulu. Ngesikhathi esifanayo, i-powder ye-graphite ewayo izobangela ukungcola ku-chip.
Ukuvela kobuchwepheshe bokumboza kunganikeza ukulungiswa kwempuphu ebusweni, kuthuthukise ukuhanjiswa kokushisa, futhi kulinganise ukusatshalaliswa kokushisa, okuye kwaba ubuchwepheshe obuyinhloko bokuxazulula le nkinga. Isisekelo se-graphite endaweni yokusetshenziswa kwemishini ye-MOCVD, ukumboza ubuso besisekelo se-graphite kufanele kuhlangabezane nezici ezilandelayo:
(1) Isisekelo se-graphite singasongwa ngokuphelele, futhi ubuningi buhle, ngaphandle kwalokho isisekelo se-graphite kulula ukusiguguleka kugesi egqwalisayo.
(2) Amandla okuhlanganiswa nesisekelo se-graphite aphezulu ukuqinisekisa ukuthi uqweqwe alulula ukuwa ngemva kwemijikelezo eminingana yokushisa okuphezulu kanye nokushisa okuphansi.
(3) Inamandla amahle okuqina kwamakhemikhali ukuze igweme ukwehluleka kokugqoka endaweni eshisa kakhulu kanye nomoya ogqwalayo.
I-SiC inezinzuzo zokumelana nokugqwala, ukuqhuba okuphezulu kokushisa, ukumelana nokushaqeka kokushisa kanye nokuqina okuphezulu kwamakhemikhali, futhi ingasebenza kahle emoyeni we-epitaxial we-GaN. Ngaphezu kwalokho, i-coefficient yokwandisa ukushisa ye-SiC ihluke kakhulu kweye-graphite, ngakho-ke i-SiC iyinto ekhethwayo yokugqoka ubuso besisekelo se-graphite.
Njengamanje, i-SiC evamile ikakhulukazi uhlobo lwe-3C, 4H kanye no-6H, futhi ukusetshenziswa kwe-SiC kwezinhlobo ezahlukene zekristalu kuhlukile. Isibonelo, i-4H-SiC ingakhiqiza amadivayisi anamandla aphezulu; i-6H-SiC iyona ezinzile kakhulu futhi ingakhiqiza amadivayisi e-photoelectric; Ngenxa yesakhiwo sayo esifana ne-GaN, i-3C-SiC ingasetshenziswa ukukhiqiza ungqimba lwe-epitaxial lwe-GaN kanye nokukhiqiza amadivayisi e-SiC-GaN RF. I-3C-SiC yaziwa nangokuthi i-β-SiC, futhi ukusetshenziswa okubalulekile kwe-β-SiC njengefilimu kanye nezinto zokumboza, ngakho-ke i-β-SiC okwamanje iyinto eyinhloko yokumboza.
Indlela yokulungisa i-silicon carbide coating
Njengamanje, izindlela zokulungiselela i-SiC coating zifaka phakathi indlela ye-gel-sol, indlela yokushumeka, indlela yokumboza ngebhulashi, indlela yokufutha nge-plasma, indlela yokusabela ngegesi yamakhemikhali (i-CVR) kanye nendlela yokufaka umphunga wamakhemikhali (i-CVD).
Indlela yokushumeka:
Le ndlela iwuhlobo lokushisa okuphezulu kwesigaba esiqinile, olusebenzisa kakhulu ingxube ye-Si powder ne-C powder njenge-embedding powder, i-graphite matrix ifakwa ku-embedding powder, bese i-sintering ephezulu yenziwa kugesi engasebenzi, futhi ekugcineni i-SiC coating itholakala ebusweni be-graphite matrix. Inqubo ilula futhi inhlanganisela phakathi kwe-coating ne-substrate inhle, kodwa ukufana kwe-coating eceleni kobukhulu kuphansi, okulula ukukhiqiza izimbobo eziningi futhi kuholele ekumelaneni okungekuhle kwe-oxidation.
Indlela yokumboza ngebhulashi:
Indlela yokumboza ngebhulashi ngokuyinhloko iwukubhula izinto zokusetshenziswa eziwuketshezi ebusweni be-graphite matrix, bese ulungisa izinto zokusetshenziswa ezingeni lokushisa elithile ukuze kulungiswe ukumboza. Inqubo ilula futhi izindleko ziphansi, kodwa ukumboza okulungiselelwe ngendlela yokumboza ngebhulashi kubuthakathaka uma kuhlanganiswa ne-substrate, ukufana kokumboza kuphansi, ukumboza kuncane futhi ukumelana nokuvundisa kuphansi, futhi kudingeka ezinye izindlela zokukusiza.
Indlela yokufafaza nge-plasma:
Indlela yokufafaza nge-plasma ngokuyinhloko iwukufafaza izinto zokusetshenziswa ezincibilikisiwe noma ezincibilikisiwe kancane ebusweni be-graphite matrix ngesibhamu se-plasma, bese ziqina bese zibophana ukuze zakhe uqwembe. Le ndlela ilula ukuyisebenzisa futhi ingalungisa uqwembe lwe-silicon carbide oluqinile, kodwa uqwembe lwe-silicon carbide olulungiselelwe yile ndlela luvame ukuba buthakathaka kakhulu futhi luholela ekumelaneni okubuthakathaka kwe-oxidation, ngakho-ke ngokuvamile lusetshenziselwa ukulungiselela uqwembe lwe-SiC oluhlanganisiwe ukuthuthukisa ikhwalithi yoqwembe.
Indlela ye-gel-sol:
Indlela ye-gel-sol ngokuyinhloko iwukulungiselela isisombululo se-sol esifanayo nesicacile esimboza ubuso be-matrix, somile sibe yi-gel bese sishiswa ukuze kutholakale ungqimba. Le ndlela ilula ukuyisebenzisa futhi ishibhile, kodwa ungqimba olukhiqizwayo lunezinkinga ezithile njengokumelana nokushaqeka okuphansi kokushisa kanye nokuqhekeka okulula, ngakho-ke alukwazi ukusetshenziswa kabanzi.
Ukusabela Kwegesi Yamakhemikhali (i-CVR):
I-CVR ikhiqiza kakhulu i-SiC coating ngokusebenzisa i-Si ne-SiO2 powder ukukhiqiza umusi we-SiO ekushiseni okuphezulu, futhi uchungechunge lwezimpikiswano zamakhemikhali lwenzeka ebusweni be-substrate yezinto ze-C. I-SiC coating elungiselelwe ngale ndlela inamathele eduze ne-substrate, kodwa izinga lokushisa lokusabela liphakeme futhi izindleko ziphakeme.
Ukususwa Komusi Wekhemikhali (i-CVD):
Njengamanje, i-CVD ubuchwepheshe obuyinhloko bokulungiselela ukugqoka kwe-SiC ebusweni be-substrate. Inqubo eyinhloko uchungechunge lwezimpendulo zomzimba nezamakhemikhali zezinto ezisabelayo esigabeni segesi ebusweni be-substrate, futhi ekugcineni ukugqoka kwe-SiC kulungiselelwa ngokufakwa ebusweni be-substrate. Ukugqoka kwe-SiC okulungiselelwe ubuchwepheshe be-CVD kuhlanganiswe eduze nobuso be-substrate, okungathuthukisa ngempumelelo ukumelana nokushiswa kwe-oxidation kanye nokumelana okubangelwa yizinto ezisetshenziswayo, kodwa isikhathi sokufakwa kwale ndlela side, futhi igesi yokusabela inegesi ethile enobuthi.
Isimo semakethe sesisekelo se-graphite esimbozwe yi-SiC
Lapho abakhiqizi bakwamanye amazwe beqala kusenesikhathi, babenomholi ocacile kanye nesabelo esikhulu semakethe. Emhlabeni jikelele, abahlinzeki abaphambili besisekelo se-graphite esimbozwe yi-SiC yi-Dutch Xycard, i-Germany SGL Carbon (SGL), i-Japan Toyo Carbon, i-United States MEMC kanye nezinye izinkampani, ezithatha imakethe yamazwe ngamazwe. Nakuba i-China idlule kubuchwepheshe obuyinhloko bokukhula okufanayo kwe-SiC coating ebusweni be-graphite matrix, i-graphite matrix esezingeni eliphezulu isathembele ku-German SGL, i-Japan Toyo Carbon kanye namanye amabhizinisi, i-graphite matrix enikezwa amabhizinisi asekhaya ithinta impilo yesevisi ngenxa yokushisa, i-elastic modulus, i-rigid modulus, amaphutha e-lattice kanye nezinye izinkinga zekhwalithi. Imishini ye-MOCVD ayikwazi ukuhlangabezana nezidingo zokusetshenziswa kwesisekelo se-graphite esimbozwe yi-SiC.
Imboni ye-semiconductor yaseShayina ithuthuka ngokushesha, ngokukhula kancane kancane kwesilinganiso sokutholakala kwemishini ye-epitaxial ye-MOCVD, kanye nokwanda kwezinye izinhlelo zokusebenza, imakethe yemikhiqizo yesisekelo se-graphite esimbozwe yi-SiC kulindeleke ukuthi ikhule ngokushesha. Ngokusho kokuqagela kokuqala kwemboni, imakethe yesisekelo se-graphite yasekhaya izodlula ama-yuan ayizigidi ezingama-500 eminyakeni embalwa ezayo.
Isisekelo se-graphite esimbozwe yi-SiC siyingxenye eyinhloko yemishini yokwakha izimboni ze-compound semiconductor, ukuqonda ubuchwepheshe obuyinhloko bokukhiqizwa kwayo kanye nokukhiqiza, kanye nokuqaphela indawo yochungechunge lonke lwemboni yezinto zokusetshenziswa, inqubo kanye nemishini, kubaluleke kakhulu ekuqinisekiseni intuthuko yemboni ye-semiconductor yaseShayina. Insimu yesisekelo se-graphite esimbozwe yi-SiC iyachuma, futhi ikhwalithi yomkhiqizo ingafinyelela ezingeni eliphezulu lomhlaba wonke maduze.
Isikhathi sokuthunyelwe: Julayi-24-2023