Ningbo Witte Energy Technology Co., Ltd. is a high-tech enterprise established in China, we are professional supply silicon carbide bushing manufacturer and supplier. We focus on new material techn...
SiC single crystal is a Group IV-IV compound semiconductor material composed of two elements, Si and C, in a stoichiometric ratio of 1:1. Its hardness is second only to diamond.
The carbon reducti...
The basic process of SiC crystal growth is divided into sublimation and decomposition of raw materials at high temperature, transportation of gas phase substances under the action of temperature gr...
The core technology for the growth of SiC epitaxial materials is firstly defect control technology, especially for defect control technology that is prone to device failure or reliability degradati...
Ningbo VET Energy Technology Co., Ltd. is a high-tech enterprise established in China, We are professional supply fuel-cell catalyst anufacturer and supplier. we are focusing on new material techno...
The technical difficulties in stably mass-producing high-quality silicon carbide wafers with stable performance include:
1) Since crystals need to grow in a high-temperature sealed environment a...