SiC mkpuchi / mkpuchi nke graphite substrate maka semiconductor,Traịti GraphiteGraphite Sicndị na-egbochi epitaxy,
Ihe ndị na-egbochi carbon, EPITAXY na MOCVD, ndị na-egbochi epitaxy, Traịti Graphite, Ihe Ndị Na-egbochi Wafer,

Mkpuchi CVD-SiC nwere njirimara nke nhazi otu, ihe dị obere, iguzogide okpomọkụ dị elu, iguzogide oxidation, ịdị ọcha dị elu, iguzogide acid na alkali na ihe ndị sitere n'okike, yana ihe onwunwe anụ ahụ na kemịkalụ kwụsiri ike.

Ma e jiri ya tụnyere ihe ndị dị na graphite dị ọcha nke ukwuu, graphite na-amalite ịgbaze na 400C, nke ga-eme ka ntụ ntụ daa n'ihi mgbaze, na-ebute mmetọ gburugburu ebe obibi na ngwaọrụ ndị dị n'akụkụ na ụlọ ndị na-anaghị amị amị, ma na-eme ka ihe ndị na-adịghị ọcha nke gburugburu ebe obibi dịkwuo elu.

Agbanyeghị, mkpuchi SiC nwere ike idobe nkwụsi ike anụ ahụ na kemịkalụ na ogo 1600. A na-ejikarị ya eme ihe n'ụlọ ọrụ ọgbara ọhụrụ, ọkachasị na ụlọ ọrụ semiconductor.

Ụlọ ọrụ anyị na-enye ọrụ nhazi mkpuchi SiC site na usoro CVD n'elu graphite, seramiiki na ihe ndị ọzọ, ka gas pụrụ iche nwere carbon na silicon meghachi omume na okpomọkụ dị elu iji nweta molekul SiC dị ọcha, molekul ndị a na-etinye n'elu ihe ndị a kpuchiri ekpuchi, na-emepụta oyi akwa nchebe SIC. SIC e guzobere na-ejikọta nke ọma na ntọala graphite, na-enye ntọala graphite ihe pụrụ iche, si otú a na-eme ka elu nke graphite dị obere, enweghị Porosity, oke okpomọkụ, iguzogide nchara na iguzogide oxidation.

Isi atụmatụ:

1. Nguzogide oxidation okpomọkụ dị elu:

Nguzogide oxidation ka dị mma nke ukwuu mgbe okpomọkụ dị elu ruo 1700 Celsius.

2. Ịdị ọcha dị elu: emere site na itinye anwụrụ kemịkalụ n'okpuru ọnọdụ okpomọkụ dị elu nke chlorine.

3. Mgbochi mbuze: ike siri ike, elu dị obere, obere ihe.

4. Mgbochi nke ire ere: asịd, alkali, nnu na ihe ndị sitere n'okike.

Nkọwapụta Isi nke Mkpuchi CVD-SIC:

Ike ọkọnọ:

Ibe/Ibe 10000 kwa ọnwa
Nkwakọ ngwaahịa na nnyefe:
Nkwakọba: Nkwakọba ọkọlọtọ na nke siri ike
Akpa poly + Igbe + katọn + pallet
Ọdụ ụgbọ mmiri:
Ningbo/Shenzhen/Shanghai
Etiti oge: