Thepa ea rona e ananeloa ka bophara ebile ea tšepahala ke basebelisi 'me e ka fihlela litlhoko tsa lichelete le tsa sechaba tse fetohang ka ho toba tsa Fektheri ka kotloloho China GreenSicSilicon Carbide Powder JIS Standard, Ka hona, re ka kopana le lipotso tse fapaneng ho tsoa ho bareki ba fapaneng. Etsa bonnete ba hore u fumana leqephe la rona la webo ho hlahloba tlhaiso-leseling e batsi le lintlha tse tsoang lihlahisoa tsa rona.
Thepa ea rona e ananeloa ka bophara ebile ea tšepahala ke basebelisi 'me e ka fihlela litlhoko tsa lichelete le tsa sechaba tse fetohang khafetsa tsaChina Silicon Carbide, Sic, Khamphani ea rona e ikemiselitse kamehla ho fihlela tlhoko ea hau ea boleng, lintlha tsa litheko le sepheo sa thekiso. Rea u amohela ka mofuthu ha u bula meeli ea puisano. Re thabela haholo ho u sebeletsa haeba u tla hloka mofani ea tšepahalang le tlhahisoleseling ea boleng.
Metswako ea khabone / khabone(e tla bitsoa "C / C kapa CFC”) ke mofuta oa thepa e kopaneng e thehiloeng khaboneng 'me e matlafatsoa ke faeba ea khabone le lihlahisoa tsa eona (preform ea faeba ea khabone). E na le inertia ea khabone le matla a phahameng a faeba ea khabone. E na le thepa e ntle ea mechini, ho hanyetsa mocheso, ho hanyetsa mafome, ho damping ha khohlano le litšobotsi tsa ho tsamaisa mocheso le motlakase.
CVD-SiCHo roala ho na le litšobotsi tsa sebopeho se ts'oanang, thepa e nyane, ho hanyetsa mocheso o phahameng, ho hanyetsa oxidation, bohloeki bo phahameng, ho hanyetsa asiti le alkali le reagent ea manyolo, e nang le thepa e tsitsitseng ea 'mele le ea lik'hemik'hale.
Ha ho bapisoa le thepa ea graphite e hloekileng haholo, graphite e qala ho oxidation ho 400C, e leng se tla baka tahlehelo ea phofo ka lebaka la oxidation, e leng se fellang ka tšilafalo ea tikoloho ho lisebelisoa tsa kantle le likamore tsa vacuum, le ho eketsa litšila tsa tikoloho e hloekileng haholo.
Leha ho le jwalo, ho kwahela SiC ho ka boloka botsitso ba mmele le ba dikhemikhale ho di-degree tse 1600, E sebediswa haholo indastering ya sejwalejwale, haholoholo indastering ya semiconductor.
Khamphani ea rona e fana ka lits'ebeletso tsa ts'ebetso ea ho koahela SiC ka mokhoa oa CVD holim'a graphite, li-ceramics le lisebelisoa tse ling, e le hore likhase tse khethehileng tse nang le carbon le silicon li arabele mochesong o phahameng ho fumana limolek'hule tsa SiC tse hloekileng haholo, limolek'hule tse behiloeng holim'a thepa e koahetsoeng, li theha lera le sireletsang la SIC. SIC e entsoeng e hokahane ka thata le motheo oa graphite, e fa motheo oa graphite thepa e ikhethang, kahoo e etsa hore bokaholimo ba graphite bo be bo kopaneng, bo se nang Porosity, bo hane mocheso o phahameng, bo hane ho ts'enyeha le ho haneloa ke oxidation.
Likarolo tse ka sehloohong:
1. Khanyetso ea ho chesoa ha oxidation mochesong o phahameng:
Khanyetso ea oxidation e ntse e le ntle haholo ha mocheso o le holimo ho fihla ho 1600 C.
2. Bohloeki bo phahameng: bo entsoe ka ho kenngoa ha mouoane ka lik'hemik'hale tlas'a boemo ba chlorination bo phahameng ba mocheso.
3. Khanyetso ea khoholeho ea mobu: ho thatafala ho hoholo, bokaholimo bo kopaneng, likaroloana tse tšesaane.
4. Ho hanyetsa mafome: asiti, alkali, letsoai le li-reagent tsa tlhaho.
Litlhaloso tse ka Sehloohong tsa Liaparo tsa CVD-SIC:
| SiC-CVD | ||
| Botenya | (g/cc)
| 3.21 |
| Matla a ho tenyetseha | (Mpa)
| 470 |
| Katoloso ea mocheso | (10-6/K) | 4
|
| Ho khanna ha mocheso | (Boemo ba leholimo/mK) | 300
|
