Izithwali ze-graphite ze-SiC zokugquma i-MOCVD zeWafer, iiSusceptors zeGraphite zeSiC Epitaxy

Inkcazo emfutshane:

Indawo Yokuqala:E-Zhejiang, eTshayina (eMaphandleni)

Inombolo yoMzekelo:Inqanawa 3004

Ukwenziwa kweekhemikhali:I-graphite egqunywe yi-SiC

Amandla okugobeka:470Mpa

Ukuqhuba kobushushu:300 W/mK

Umgangatho:Igqibelele

Umsebenzi:I-CVD-SiC

Isicelo:I-semiconductor / i-Photovoltaic

Uxinano:3.21 g/cc

Ukwandiswa kobushushu:4 10-6/K

Uthuthu: <5ppm

Isampuli:Iyafumaneka

Ikhowudi ye-HS:6903100000

Thumela i-imeyile kuthi Khuphela njengePDF

Iinkcukacha zeMveliso

Iithegi zeMveliso

Izithwali ze-graphite ze-SiC zokugquma i-MOCVD zeWafer, ii-Graphite Susceptors ze-SiC Epitaxy,
Izixhobo zokuxhasa i-carbon, ii-susceptors ze-epitaxy, Izixhobo zegrafayithi, IiSusceptors zeGraphite Wafer,

I-CVD-SiC coating ineempawu ezifana nesakhiwo esifanayo, izinto ezincinci, ukumelana nobushushu obuphezulu, ukumelana ne-oxidation, ubunyulu obuphezulu, ukumelana ne-asidi kunye ne-alkali kunye ne-reagent yendalo, eneempawu zomzimba nezizinzileyo.

Xa kuthelekiswa nezinto zegrafiti ezicocekileyo kakhulu, igrafiti iqala ukunyibilika kwi-400C, nto leyo eya kubangela ukulahleka komgubo ngenxa yokunyibilika, nto leyo eya kubangela ungcoliseko lokusingqongileyo kwizixhobo ezingaphandle kunye namagumbi okufunxa, kwaye yonyusa ukungcola kwendawo ecocekileyo kakhulu.

Nangona kunjalo, i-SiC coating inokugcina uzinzo lomzimba kunye neekhemikhali kwi-1600 degrees, Isetyenziswa kakhulu kushishino lwanamhlanje, ngakumbi kushishino lwe-semiconductor.

Inkampani yethu ibonelela ngeenkonzo zenkqubo yokugquma iSiC ngendlela yeCVD kumphezulu wegrafiti, iiseramikhi kunye nezinye izinto, ukuze iigesi ezikhethekileyo eziqulethe ikhabhoni kunye nesilicon zisabela kubushushu obuphezulu ukuze zithole iimolekyuli zeSiC ezicocekileyo kakhulu, iimolekyuli ezifakwe kumphezulu wezinto ezigqunyiweyo, zenze umaleko okhuselayo we-SIC. I-SIC eyenziweyo ibotshelelwe ngokuqinileyo kwisiseko segrafiti, inika isiseko segrafiti iipropati ezikhethekileyo, ngaloo ndlela yenza umphezulu wegrafiti ube mncinci, ungabi naPorosity, uxhathiso oluphezulu lobushushu, uxhathiso lokugqwala kunye noxhathiso lwe-oxidation.

Iimpawu eziphambili:

1. Ukumelana ne-oxidation yobushushu obuphezulu:

Ukumelana ne-oxidation kusengcono kakhulu xa amaqondo obushushu ephezulu ukuya kwi-1700 C.

2. Ubunyulu obuphezulu: benziwa yi-chemical vapor deposition phantsi kwemeko ye-chlorination yobushushu obuphezulu.

3. Ukumelana nokukhukuliseka: ubulukhuni obuphezulu, umphezulu oxineneyo, amasuntswana amancinci.

4. Ukumelana nokugqwala: i-asidi, i-alkali, ityuwa kunye nee-reagents ze-organic.

Iinkcukacha eziphambili zeengubo zeCVD-SIC:

I-SiC-CVD
Uxinano	(g/cc)	3.21
Amandla okugobeka	(iMpa)	470
Ukwandiswa kobushushu	(10-6/K)	4
Ukuqhuba kobushushu	(W/mK)	300

Amandla okubonelela:

Iziqwenga ezili-10000 ngenyanga
Ukupakishwa kunye nokuHanjiswa:
Ukupakisha: Ukupakisha okuqhelekileyo nokuqinileyo
Ingxowa yePoly + Ibhokisi + Ibhokisi + Ipalethi
Izibuko:
Ningbo/Shenzhen/Shanghai
Ixesha lokukhokhela: