I-SiC Coated Graphite Carrier / Susceptor

Incazelo emfushane:

I-VET Energy SiC Coated Graphite Carrier/Susceptor ingumkhiqizo osebenza kahle kakhulu oklanyelwe ukunikeza ukusebenza okungaguquki nokuthembekile esikhathini eside. Inokumelana nokushisa okuhle kakhulu nokufana okushisayo, ukuhlanzeka okuphezulu, ukumelana nokuguguleka, okuyenza ibe yisixazululo esiphelele sezinhlelo zokusebenza zokucubungula ama-wafer.

Thumela i-imeyili kithi Landa njenge-PDF

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

I-SiC coated suscetpor iyisici esibalulekile esisetshenziswa ezinqubweni zokukhiqiza ezahlukahlukene ze-semiconductor. Sisebenzisa ubuchwepheshe bethu obunelungelo lobunikazi ukwenza i-SiC coated suscetpor ibe nokuhlanzeka okuphezulu kakhulu, ukufana okuhle kokunamathela nempilo yesevisi enhle kakhulu, kanye nokumelana namakhemikhali okuphezulu kanye nezakhiwo ezishisayo ezishisayo.

Izici zemikhiqizo yethu:

1. Ukumelana nokushisa okuphezulu kwe-oxidation kufika ku-1700 ℃.
2. Ukuhlanzeka okuphezulu nokufana okushisayo
3. Ukumelana nokugqwala okuhle kakhulu: i-asidi, i-alkali, usawoti kanye nama-organic reagents.
4. Ukuqina okuphezulu, indawo ehlangene, izinhlayiya ezinhle.
5. Impilo yesevisi ende futhi ihlala isikhathi eside

I-CVD SiC薄膜基本物理性能 Izakhiwo eziyisisekelo ze-CVD SiCenamathela
性质 / Impahla	典型数值 / Inani Elijwayelekile
晶体结构 / Isakhiwo seCrystal	I-FCC β isigaba多晶，主要為（111）取向
密度 / Ukuminyana	3.21 g/cm³
硬度 / Ukuqina	2500 维氏硬度 (500g umthwalo)
晶粒大小 / Uhlamvu SiZe	2 ~ 10μm
纯度 / Ukuhlanzeka Kwamakhemikhali	99.99995%
热容 / Amandla Okushisa	640 J·kg^-1·K^-1
升华温度 / I-Sublimation Temperature	2700 ℃
抗弯强度 / Amandla Aguquguqukayo	415 MPa RT 4-iphoyinti
杨氏模量 / I-Modulus Encane	430 Gpa 4pt ukugoba, 1300℃
导热系数 / ThermalI-Conductivity	300Wm^-1·K^-1
热膨胀系数 / Ukwandiswa Kokushisa (CTE)	4.5×10^-6K^-1