SiC has excellent physical and chemical properties, such as high melting point, high hardness, corrosion resistance and oxidation resistance. Especially in the range of 1800-2000 ℃, SiC has good ab...
Green hydrogen: rapid expansion of global development pipelines and projects
A new report from Aurora energy research highlights how quickly companies are responding to this opportunity and develo...
The third generation of semiconductors, represented by gallium nitride (GaN) and silicon carbide (SiC), have been rapidly developed due to their excellent properties. However, how to accurately mea...
Industrially, natural graphite is classified into crystalline graphite and cryptocrystalline graphite according to the crystal form. The crystalline graphite is better crystallized, and the crystal...
The technical difficulties in stably mass-producing high-quality silicon carbide wafers with stable performance include:
1) Since crystals need to grow in a high-temperature sealed environment a...
Generally, the busbar between the output end of the DC graphitization furnace rectifier cabinet and the conductive electrode of the furnace head is called a short net, and the busbar used in the gr...