1. SiC crystal growth technology route
PVT (sublimation method),
HTCVD (high temperature CVD),
LPE (liquid phase method)
are three common SiC crystal growth methods;
The most recognized meth...
With the continuous advancement of science and technology, the semiconductor industry has an increasing demand for high-performance, high-efficiency materials. In this field, silicon carbide crysta...
Graphite Bearing is made by Electro-Graphite, Carbon Graphite, Metal Graphite, and Resin-Bonded Graphit, Two types are incluided that are Radial Bearing and Axial Bearing.
The global Graphite Beari...
Silicon carbide (SiC) ceramics have long been widely used in various advanced manufacturing fields due to their high hardness, high strength, small coefficient of thermal expansion, high thermal co...
The third generation of semiconductors, represented by gallium nitride (GaN) and silicon carbide (SiC), have been rapidly developed due to their excellent properties. However, how to accurately mea...
The origin of the name epitaxial wafer
First, let’s popularize a small concept: wafer preparation includes two major links: substrate preparation and epitaxial process. The substrate is a wafer m...