IC Single-Crystal Silicon Epitaxy

Nkọwa Dị Mkpirikpi:

Ebe Mmalite:Chaịna

Nhazi kristal:Usoro FCCβ

Njupụta:3.21 g/cm;

Ike:Ndị Vickers 2500;

Nha ọka:2 ~ 10μm;

Ịdị Ọcha Kemịkalụ:99.99995%;

Ike Okpomọkụ:640J·kg-1·K-1;

Okpomọkụ Sublimation:2700℃;

Ike Felexural:415 Mpa (RT 4-Point);

Modulu Young:430 Gpa (ngbagọ 4pt, 1300℃);

Mgbasawanye Okpomọkụ (CTE):4.5 10-6K-1;

Ọgbakọ okpomọkụ:300(W/MK);

Zitere anyị ozi-e Budata ya dị ka PDF

Nkọwa Ngwaahịa

Akara Ngwaahịa

Nkọwa Ngwaahịa

Ụlọ ọrụ anyị na-enye ọrụ usoro mkpuchi SiC site na usoro CVD n'elu graphite, seramiiki na ihe ndị ọzọ, ka gas pụrụ iche nwere carbon na silicon meghachi omume na okpomọkụ dị elu iji nweta molekul SiC dị ọcha, molekul ndị a na-etinye n'elu ihe ndị a kpuchiri ekpuchi, na-emepụta oyi akwa nchekwa SIC.

Isi atụmatụ:

1. Nguzogide oxidation okpomọkụ dị elu:

Nguzogide oxidation ka dị mma nke ukwuu mgbe okpomọkụ dị elu ruo 1600 Celsius.

2. Ịdị ọcha dị elu: ejiri ihe e ji ekpofu uzuoku mee ya n'okpuru ọnọdụ okpomọkụ dị elu nke chlorine.

3. Mgbochi mbuze: ike siri ike, elu dị obere, obere ihe.

4. Mgbochi nke ire ere: asịd, alkali, nnu na ihe ndị sitere n'okike.

Nkọwapụta Isi nke mkpuchi CVD-SIC

Njirimara SiC-CVD
Ọdịdị kristal	FCC β nkebi
Njupụta	g/cm ³	3.21
Ike siri ike	Ike Vickers	2500
Nha ọka	μm	2~10
Ọcha Kemịkalụ	%	99.99995
Ike Okpomọkụ	J·kg-1 ·K-1	640
Okpomọkụ Sublimation	℃	2700
Ike Felexural	MPa (RT isi ihe anọ)	415
Modulu Young	GPA (ngbagọ 4pt, 1300℃)	430
Mgbasawanye Okpomọkụ (CTE)	10-6K-1	4.5
Ọkwa okpomọkụ	(W/mK)	300