Calefactor Graphiti Personalisatus pro Lamella Silicii Semiconductoris, Obductio SiC

Calefactor Graphiti Personalisatus pro Lamella Silicii Semiconductoris, Obductio SiC Imago Praecipua

Descriptio Brevis:

Specificatio Technica	VET-M3
Densitas Massae (g/cm3)	≥1.85
Contentum Cineris (PPM)	≤500
Duritia litoris	≥45
Resistentia Specifica (μ.Ω.m)	≤12
Robur Flexurale (Mpa)	≥40
Robur Compressivum (Mpa)	≥70
Maxima Magnitudo Granorum (μm)	≤43
Coefficiens Expansionis Thermalis Mm/°C	≤4.4*10⁻⁶

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AdaptusCalefactor Graphiti pro Lamella Silicii Semiconductoris

Specificatio Technica	VET-M3
Densitas Massae (g/cm3)	≥1.85
Contentum Cineris (PPM)	≤500
Duritia litoris	≥45
Resistentia Specifica (μ.Ω.m)	≤12
Robur Flexurale (Mpa)	≥40
Robur Compressivum (Mpa)	≥70
Maxima Magnitudo Granorum (μm)	≤43
Coefficiens Expansionis Thermalis Mm/°C	≤4.4*10⁻⁶

Calefactor Graphiti Personalisatus pro Lamella Silicii Semiconductoris

Calefactor Graphiti Personalisatus pro Lamella Silicii Semiconductoris

Calefactor Graphiti Personalisatus pro Lamella Silicii Semiconductoris

Calefactor Graphiti Personalisatus pro Lamella Silicii Semiconductoris

Calefactor Graphiti Personalisatus pro Lamella Silicii Semiconductoris

Praecedens: Calefactor Graphiti Personalisatus pro Zona Calida / Campo Thermali Graphiti

Deinde: Calefactor graphitus Carburum silicii (SiC) Obductio SiC Obductio SiC

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