Praecipua commoda susceptores nostri SiC-graphite susceptores includunt altam puritatem, homogeneam efficiens et optimam servitii vitam.Magnam etiam habent resistentiam chemicam et proprietates scelerisque stabilitatis.
SiC coating of Graphite substrate for semiconductor applications partem producit cum puritate et resistentia ad atmosphaeram oxidificationis.
CVD SiC vel CVI SiC applicatur Graphite partium designationis simplicium vel complexarum.Pinguis variis crassitudinibus et partibus amplissimis applicari potest.
Features:
· Optime scelerisque Concursores Resistentia
· Praeclara corporis Concursores Repugnantia
· Optime Chemical Resistentia
· Super High Purity
· Availability in Complex Shape
· Usabilis sub atmosphaera Oxidizing
Applicatio:
Typical Proprietates Base Graphite Material:
Densitas apparentis: | 1.85 g/cm3 |
Resistivity electrica: | 11 μΩm |
Flexurae Strenth: | 49 MPa (500kgf/cm2) |
Litoris duritia: | 58 |
Cineres: | <5ppm |
Scelerisque conductivity: | 116 W/mK (100 kcal/mhr-℃) |
Carbon commeatus susceptores et graphites componentes omnium reactoria epitaxy currente.Nostra portfolio includit dolium susceptores pro unitatibus applicatis et LPE, subcinericios susceptores LPE, CSD, et Gemini unitates, et laganum susceptores ad applicandos et ASM unitates. Coniungendo fortes societates cum ducens OEMs, materiae peritia et fabricandi modo, SGL meliorem consilium tuum application offert.