As a new type of semiconductor material, SiC has become the most important semiconductor material for the manufacture of short-wavelength optoelectronic devices, high temperature devices, radiation resistance devices and high power/high power electronic devices due to its excellent physical and chemical properties and electrical properties. Especially when applied under extreme and harsh conditions, the characteristics of SiC devices far exceed those of Si devices and GaAs devices. Therefore, SiC devices and various kinds of sensors have gradually become one of the key devices, playing a more and more important role.
SiC devices and circuits have developed rapidly since the 1980s, especially since 1989 when the first SiC substrate wafer entered the market. In some fields, such as light-emitting diodes, high-frequency high-power and high-voltage devices, SiC devices have been widely used commercially. The development is rapid. After nearly 10 years of development, the SiC device process has been able to manufacture commercial devices. A number of companies represented by Cree have begun to offer commercial products of SiC devices. Domestic research institutes and universities have also made gratifying achievements in SiC material growth and device manufacturing technology. Although the SiC material has very superior physical and chemical properties, and the SiC device technology is also mature, but the performance of SiC devices and circuits is not superior. In addition to the SiC material and device process need to be constantly improved. More efforts should be put on how to take advantage of SiC materials by optimizing S5C device structure or proposing new device structure.
At present. The research of SiC devices mainly focuses on discrete devices. For each type of device structure, the initial research is to simply transplant the corresponding Si or GaAs device structure to SiC without optimizing the device structure. Since the intrinsic oxide layer of SiC is the same as Si, which is SiO2, it means that most Si devices, especially m-pa devices, can be manufactured on SiC. Although it is only a simple transplant, some of the devices obtained have achieved satisfactory results, and some of the devices have already entered the factory market.
SiC optoelectronic devices, especially blue light emitting diodes (BLU-ray leds), have entered the market in the early 1990s and are the first mass-produced SiC devices. High voltage SiC Schottky diodes, SiC RF power transistors, SiC MOSFETs and mesFETs are also commercially available. Of course, the performance of all these SiC products is far from playing the super characteristics of SiC materials, and the stronger function and performance of SiC devices still need to be researched and developed. Such simple transplants often cannot fully exploit the advantages of SiC materials. Even in the area of some advantages of SiC devices. Some of the SiC devices initially manufactured cannot match the performance of the corresponding Si or CaAs devices.
In order to better transform the advantages of SiC material characteristics into the advantages of SiC devices, we are currently studying how to optimize the device manufacturing process and device structure or develop new structures and new processes to improve the function and performance of SiC devices.
Post time: Aug-23-2022