Pressureless sintered silicon carbide (SSIC)inogadzirwa uchishandisa yakanakisa SiC poda ine sintering additives. Inogadziriswa uchishandisa nzira dzekugadzira dzinowanzoita kune mamwe makeramiki uye sintered pa 2,000 kusvika 2,200 ° C mune inert gas atmosphere.Pamwe chete neyakagadzirwa-grained versions, nehukuru hwezviyo <5 um, coarse-grained versions nehukuru hwezviyo kusvika ku 1.5 mm inowanikwa.

SSIC inosiyaniswa nesimba repamusoro rinogara rakada kufanana kusvika kune tembiricha yakanyanya (inenge 1,600 ° C), kuchengetedza iro simba kwenguva refu!

Product zvakanakira:

High tembiricha oxidation kuramba

Yakanakisa Corrosion resistance

Zvakanaka Abrasion kuramba

High coefficient yekupisa conductivity
Self-lubricity, low density
High kuoma
Customized dhizaini.

Technical properties: