ngokwezifiso isikhunta se-Silicon SIC isikhunta se-silicon SSIC RBSIC isikhunta

ngokwezifiso Isikhunta se-Silicon SIC isikhunta i-silicon SSIC RBSIC isikhunta Isithombe esifakiwe

Incazelo emfushane:

I-Silicon carbide engena-Pressureless sintered (SSIC)ikhiqizwa kusetshenziswa i-SiC powder enhle kakhulu equkethe izithasiselo ze-sintering. Icutshungulwa kusetshenziswa izindlela zokwakha ezijwayelekile kwezinye izitsha zobumba futhi ifakwe ku-2,000 kuya ku-2,200 ° C endaweni yegesi engasebenzi.Kanye nezinguqulo ezisanhlamvu, ezinosayizi wokusanhlamvu <5 um, izinguqulo ezinohlamvu oluqinile ezinosayizi wokusanhlamvu ofika ku-1.5 mm ziyatholakala.

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Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Isikhunta se-Silicon SICi-siliconIsikhunta se-SSIC RBSIC

I-SSIC ihlukaniswa ngamandla aphezulu ahlala cishe njalo afinyelela kumazinga okushisa aphezulu kakhulu (cishe u-1,600° C), agcina lawo mandla isikhathi eside!

Izinzuzo zomkhiqizo:

Ukumelana nokushisa okuphezulu kwe-oxidation

Ukumelana ne-Corrosion okuhle kakhulu

Ukumelana okuhle kwe-Abrasion

I-coefficient ephezulu ye-conductivity yokushisa
Ukuzithambisa, ukuminyana okuphansi
Ukuqina okuphezulu
Umklamo ngokwezifiso.

Izici zobuchwepheshe:

Izinto	Iyunithi	Idatha
Ukuqina	HS	≥110
Isilinganiso se-Porosity	%	<0.3
Ukuminyana	g/cm3	3.10-3.15
Iyacindezela	I-MPa	> 2200
Amandla Efractural	I-MPa	> 350
I-coefficient yokwandisa	10/°C	4.0
Okuqukethwe kwe-Sic	%	≥99
I-Thermal conductivity	W/mk	>120
I-Elastic Modulus	I-GPa	≥400
Izinga lokushisa	°C	1380