Izixhobo zeTube yeFurnace yeSemiconductor Diffusion: iQuartz, iSiC kunye neAdvanced Ceramic Solutions

Intshayelelo: Indima Ebalulekileyo Yezixhobo Zetyhubhu Yesithando Kwimveliso Yee-Semiconductor

Kwimveliso ye-semiconductor wafer, i-Diffusion Furnace Tube yenye yezona zinto zibalulekileyo kwinkqubo yobushushu obuphezulu ezisetyenziswa kwizixhobo zokucubungula ubushushu. Ibonelela ngendawo yokusabela elawulwayo kwiinkqubo ezininzi eziphambili ze-semiconductor, kuquka:

• Ukuxinana kobushushu;
• Ukusasazwa kweDopant;
• Ukufakelwa;
• Ukufakwa kwe-LPCVD;
• Unyango lwe-wafer yobushushu obuphezulu.

Ngokungafaniyo nezinto ze-oven zemizi-mveliso eziqhelekileyo, iityhubhu ze-oven ze-semiconductor kufuneka zihlangabezane neemfuno ezingqongqo kakhulu kuba nokuba ungcoliseko oluncinci okanye ukuveliswa kwamasuntswana kunokuchaphazela ngokuthe ngqo ukuvunwa kwe-wafer kunye nokuthembeka kwesixhobo.

Ngexesha leenkqubo zokusasazeka kwe-semiconductor kunye ne-oxidation, iityhubhu zesithando zihlala zibonakaliswe ku:

• Iindawo ezinobushushu obuphezulu ukusuka kwi-800°C ukuya kwi-1200°C;
• Iigesi ezikhupha i-oxidizing ezifana ne-O₂ kunye ne-H₂O;
• Iigesi ezingasebenziyo kuquka i-N₂ kunye ne-Ar;
• Izinto ezibangela i-Dopant ezifana ne-POCl₃ kunye ne-BBr₃;
• Iintlobo zeekhemikhali ezikonakalisayo ezifana ne-HCl.

Ke ngoko, izixhobo zetyhubhu yesithando kufuneka ngaxeshanye zibonelele:

• Ubumsulwa obuphezulu kakhulu beekhemikhali;
• Uzinzo oluhle kakhulu lobushushu;
• Ungcoliseko oluphantsi lwesinyithi;
• Ukumelana nokugqwala okuphezulu;
• Ukuveliswa kwamasuntswana aphantsi;
• Ixesha elide lokusebenza.

Ngokwemigangatho yezinto zezixhobo ze-semiconductor kunye neendlela zokwenza ishishini, izixhobo zetyhubhu yesithando ezisetyenziswa kakhulu ziquka:

• I-Quartz ecocekileyo kakhulu (i-Fused Silica, i-SiO₂)
• I-Silicon Carbide (i-SiC Ceramic)
• I-Alumina Ceramic (Al₂O₃)
• I-Silicon Nitride Ceramic (Si₃N₄)

Ityhubhu yeQuartz ecocekileyo ephezulu

Phakathi kwazo zonke izixhobo zetyhubhu ye-semiconductor furnace, ityhubhu ye-quartz ecocekileyo kakhulu ihlala isisombululo esiphambili kwimveliso ye-silicon wafer eqhelekileyo ngenxa yobunyulu bayo obubalaseleyo, uzinzo lobushushu kunye netekhnoloji yokucubungula evuthiweyo.

Iityhubhu ze-quartz ze-semiconductor zenziwe nge-silica exutywe ne-high-purity, apho icandelo eliphambili yi-silicon dioxide (SiO₂). Inqanaba lobumsulwa lidla ngokudlula i-99.99%, ngolawulo olungqongqo lokungcola kwesinyithi okuquka: Fe; Na; K; Cu; Al.

Kwiinkqubo ze-thermal oxidation, iityhubhu ze-quartz furnace zibonelela ngendawo efanelekileyo yokusabela ekwenzeni iileya ze-silicon oxide.

Iimpendulo eziqhelekileyo ziquka:

Ukukhupha i-oksidation eyomileyo:

Si + O₂ → SiO₂

Ukunyibilikisa amanzi:

Si + H₂O → SiO₂ + H₂

Ezi nkqubo ze-oxidation zibalulekile kwi:

• Ukwakheka kwe-dielectric yesango;
• Ukungashukumi komphezulu;
• Izakhiwo zokuzahlula.

Iityhubhu zeQuartz zisetyenziswa kakhulu kwiinkqubo zokusasazwa kwe-dopant, kuquka:

• Ukusasazwa kwe-phosphorus kusetyenziswa i-POCl₃;
• Ukusasazwa kweBoron kusetyenziswa iBBr₃;
• Iinkqubo zokusasazwa kwe-Arsenic.

Ukongeza, iityhubhu ze-quartz furnace zisetyenziswa kakhulu kwiinkqubo ze-LPCVD ze: 

• Ukugcinwa kwe-silicon nitride;
• Ukufakwa kwe-silicon ye-polycrystalline.

Iingenelo eziphambili zeetyhubhu zesithando se-quartz ziquka:

• Ucoceko oluGqwesileyo lweeKhemikhali
• Ukwanda Okuphantsi Kobushushu
• Ubunye obuGqibeleleyo boBushushu

Nangona kunjalo, iityhubhu ze-quartz nazo zinemida ethile. Umda oyintloko kukuzinza koomatshini kumaqondo obushushu aphezulu. Xa isebenza ixesha elide ngaphezu kwe-1100–1200°C, i-quartz inokufumana oku kulandelayo:

• Ukuguqulwa kwetyhubhu;
• Ukuwa;
• Amandla oomatshini anciphileyo.

Ngoko ke, i-quartz iseyeyona ndlela ikhethwayo yokwenziwa kwe-silicon semiconductor kodwa ayifanelekanga kangako kwiinkqubo zobushushu obuphezulu kakhulu okanye ezitshisa kakhulu.

Ityhubhu yeSilicon Carbide: Isisombululo sobushushu obuphezulu sokwenziwa kweeSemiconductor eziPhambili

I-silicon carbide (SiC) ceramic ivele njengenye indlela ethembisayo kwiityhubhu ze-furnace eziphambili.

I-SiC yikhompawundi ye-covalent ceramic equlathe ii-athomu ze-silicon kunye ne-carbon. Ii-ceramics ze-SiC ze-semiconductor zihlala ziquka:

• I-SiC ebophelelwe yimpendulo;
• I-Sintered SiC;
• Izixhobo zeCVD SiC ezicocekileyo kakhulu.

Xa kuthelekiswa ne-quartz, i-SiC ibonelela ngokuphuculwa okukhulu:

• Ukumelana nobushushu;
• Amandla oomatshini;
• Ukuqhuba kwe-thermal;
• Ukuqina kweekhemikhali.

Enye yezona nzuzo zibalulekileyo zeetyhubhu ze-SiC furnace kukuba zinamandla aphezulu okushisa.

Nangona i-quartz idla ngokukhawulelwa kwiimeko zokusebenza ezimalunga ne-1200°C, ii-SiC ceramics zinokumelana namaqondo obushushu angaphezulu kwe-1500°C, nto leyo eyenza zifaneleke kwiinkqubo zobushushu eziphambili.

Umahluko phakathi kokuqhuba kobushushu nawo ubalulekile:

• I-Quartz: ~1.4 W/m·K
• I-Silicon Carbide: 120–200 W/m·K

Ukuqhuba okuphezulu kobushushu beSiC kwenza:

• Impendulo ekhawulezayo yobushushu;
• Ukuphuculwa kokufana kobushushu;
• Ukuncipha kwe-thermal gradients.

Kwizicelo ze-semiconductor, iityhubhu ze-SiC furnace ziqwalaselwa kakhulu kwezi:

• Ukufakelwa kwe-annealing kubushushu obuphezulu;
• Iinkqubo zokusasazwa eziphambili;
• Ukuveliswa kwezixhobo zamandla ze-silicon carbide;
• Ukucutshungulwa kwe-semiconductor ye-GaN.

Ityhubhu yeAlumina (Al₂O₃): Isixhobo seCeramic esinobushushu obuphezulu nesingabizi kakhulu

Iityhubhu ze-alumina ceramic zenziwa ngokuyintloko nge-aluminium oxide (Al₂O₃), ngokuqhelekileyo zinamanqanaba obumsulwa aqala kwi-95% ukuya kwi-99.8%.

Amandla okusebenza kobushushu be-alumina ceramics anokufikelela malunga ne: 1400–1700°C. Oku kuphezulu kune-quartz eqhelekileyo.

Ngenxa yezi mpawu, iityhubhu zesithando se-alumina zisetyenziswa kakhulu kwi:

Iifeni ze-semiconductor zelebhu;

• Izixhobo zophando nophuhliso;
• l Iinkqubo zovavanyo zokucubungula ubushushu.

Nangona kunjalo, i-alumina ayisetyenziswa kakhulu kwimveliso ye-semiconductor enomthamo ophezulu. Isizathu esiphambili kukulawula ungcoliseko.

Xa kuthelekiswa ne-quartz, ii-alumina ceramics zingazisa:

• Ungcoliseko lwe-aluminiyam;
• l Amanqanaba aphezulu okungcola.

Kwimveliso ye-semiconductor ephucukileyo efuna amanqanaba aphantsi kakhulu okungcola, i-quartz kunye ne-high-pure SiC zihlala zikhetho ezikhethwayo.

Ityhubhu yeSilicon Nitride (Si₃N₄): I-Ceramic ePhambili yoKuxhathisa ukuShukuma koMlilo

I-silicon nitride (Si₃N₄) yenye yezinto zeseramikhi eziphambili ezaziwa ngeempawu zayo ezibalaseleyo zoomatshini. Ukusetyenziswa kwe-semiconductor okunokwenzeka kuquka:

• Izixhobo zesithando ezikhethekileyo;
• Izixhobo zophando ze-semiconductor;
• Izakhiwo zeseramikhi ezishushu kakhulu.

Nangona kunjalo, iityhubhu ze-Si₃N₄ zomlilo azisetyenziswa kakhulu kwii-mainstream semiconductor diffusion furnitures ngenxa yezi:

• Ubunzima obuphezulu bokuvelisa;
• Ixabiso eliphezulu;
• Ukuvuthwa okulinganiselweyo konxibelelwano lokubonelela ngeenkonzo zoshishino.

Isiphelo

I-Diffusion Furnace Tube yinxalenye ebalulekileyo kodwa edla ngokungathathelwa ngqalelo kwimveliso ye-semiconductor. Izinto zayo zinefuthe ngqo:

• Isivuno se-wafer;
• Uzinzo lwenkqubo;
• Ukusebenza kwamasuntswana;
• Ubomi bezixhobo.

Okwangoku:

Iityhubhu zeQuartzzilawula iinkqubo ze-oxidation kunye nokusasazwa kwe-oxidation ngenxa yobunyulu bazo obugqwesileyo kunye nokuvuthwa.

Iityhubhu zeSiCibonelela ngamandla aphezulu obushushu kwizicelo ze-semiconductor zesizukulwana esilandelayo.

Iityhubhu ze-Alumina kunye ne-silicon nitride zisebenza ngokusetyenziswa okukhethekileyo kubushushu obuphezulu apho ukusebenza koomatshini kujongwa phambili.

Njengoko ukwenziwa kwee-semiconductor kuqhubeka kubushushu obuphezulu, ii-wafers ezinkulu kunye nezixhobo ze-wide-bandgap, izixhobo ze-ceramic furnace tube eziphambili ziya kudlala indima ebaluleke ngakumbi kwizixhobo zenkqubo ye-semiconductor zexesha elizayo.