Izinto Zokwenza I-Semiconductor Diffusion Furnace Tube: I-Quartz, i-SiC kanye ne-Advanced Ceramic Solutions

Isingeniso: Indima Ebalulekile Yezinto Ze-Furnace Tube Ekukhiqizweni Kwe-Semiconductor

Ekwenziweni kwe-semiconductor wafer, i-Diffusion Furnace Tube ingenye yezingxenye zenqubo yokushisa okuphezulu ezibaluleke kakhulu ezisetshenziswa emishinini yokucubungula ukushisa. Ihlinzeka ngendawo yokusabela elawulwayo yezinqubo eziningana ezibalulekile ze-semiconductor, okuhlanganisa:

• ukushiswa kwe-thermal;
• Ukusabalala kwe-Dopant;
• Ukufakwa kwe-Annealing;
• ukufakwa kwe-LPCVD;
• Ukwelashwa kwe-wafer eshisa kakhulu.

Ngokungafani nezingxenye zesithando sezimboni ezivamile, amashubhu esithando se-semiconductor kumele ahlangabezane nezimfuneko eziqinile kakhulu ngoba ngisho nokungcola okuncane noma ukukhiqizwa kwezinhlayiya kungathinta ngqo ukukhiqizwa kwe-wafer kanye nokuthembeka kwedivayisi.

Ngesikhathi sokusatshalaliswa kwe-semiconductor kanye nezinqubo ze-oxidation, amashubhu esithando ngokuvamile abonakala ku:

• Izindawo zokushisa eziphakeme ezisukela ku-800°C kuya ku-1200°C;
• Amagesi akhipha i-oxidizing njenge-O₂ kanye ne-H₂O;
• Amagesi angasebenzi kahle afaka phakathi i-N₂ ne-Ar;
• Ama-Dopant precursors afana ne-POCl₃ kanye ne-BBr₃;
• Izinhlobo zamakhemikhali abhubhisayo njenge-HCl.

Ngakho-ke, izinto ze-furnace tube kumele zihlinzeke ngasikhathi sinye:

• Ubumsulwa bamakhemikhali obuphezulu kakhulu;
• Ukuqina okuhle kakhulu kokushisa;
• Ukungcola okuphansi kwensimbi;
• Ukumelana nokugqwala okuphezulu;
• Ukukhiqizwa kwezinhlayiya okuphansi;
• Isikhathi eside sokusebenza.

Ngokwezindinganiso zezinto zemishini ye-semiconductor kanye nemikhuba yemboni, izinto zeshubhu yesithando ezisetshenziswa kakhulu zifaka:

• I-High Purity Quartz (i-Fused Silica, i-SiO₂)
• I-Silicon Carbide (i-SiC Ceramic)
• I-Alumina Ceramic (Al₂O₃)
• I-Silicon Nitride Ceramic (Si₃N₄)

Ishubhu le-Quartz Elihlanzekile Kakhulu

Phakathi kwazo zonke izinto zeshubhu lesithando se-semiconductor, ishubhu le-quartz elihlanzekile kakhulu lihlala liyisisombululo esiyinhloko sokukhiqiza i-silicon wafer evamile ngenxa yobumsulwa bayo obuvelele, ukuzinza kokushisa kanye nobuchwepheshe bokucubungula obuvuthiwe.

Amashubhu e-quartz ebanga le-semiconductor akhiqizwa nge-silica ehlanganisiwe ehlanzekile kakhulu, lapho ingxenye eyinhloko kuyi-silicon dioxide (SiO₂). Izinga lokuhlanzeka livame ukwedlula u-99.99%, ngokulawulwa okuqinile kokungcola kwensimbi okuhlanganisa: Fe; Na; K; Cu; Al.

Ezinqubweni ze-oxidation yokushisa, amashubhu esithando se-quartz ahlinzeka ngendawo efanelekile yokusabela yokwakha izendlalelo ze-silicon oxide.

Ukusabela okuvamile kufaka phakathi:

Ukuvundisa Komoya Omile:

Si + O₂ → SiO₂

Ukushiswa Okumanzi:

I-Si + H₂O → I-SiO₂ + H₂

Lezi zinqubo ze-oxidation zibalulekile ku:

• Ukwakheka kwe-dielectric yesango;
• Ukudlula kobuso;
• Izakhiwo zokuhlukaniswa.

Amashubhu e-quartz nawo asetshenziswa kabanzi ezinqubweni zokusabalalisa ama-dopant, okuhlanganisa:

• Ukusabalala kwe-phosphorus kusetshenziswa i-POCl₃;
• Ukusabalala kwe-Boron kusetshenziswa i-BBr₃;
• Izinqubo zokusabalalisa i-Arsenic.

Ngaphezu kwalokho, amashubhu esithando se-quartz asetshenziswa kabanzi ezinhlelweni ze-LPCVD ze: 

• Ukufakwa kwe-silicon nitride;
• Ukufakwa kwe-silicon ye-polycrystalline.

Izinzuzo ezibalulekile zamashubhu esithando se-quartz zifaka:

• Ukuhlanzeka Kwamakhemikhali Okuhle Kakhulu
• Ukwanda Okuphansi Kokushisa
• Ukufana Okuhle Kakhulu Kokushisa

Kodwa-ke, amashubhu e-quartz nawo anemikhawulo ethile. Umkhawulo oyinhloko ukuzinza komshini okushisa okuphezulu. Ngaphansi kokusebenza isikhathi eside ngaphezu kuka-1100–1200°C, i-quartz ingase ibhekane nalokhu:

• ukuguqulwa kwepayipi;
• Ukuwa;
• Amandla omshini ancishisiwe.

Ngakho-ke, i-quartz isalokhu iyisinqumo esikhethwayo sokukhiqiza i-silicon semiconductor eyinhloko kodwa ayifaneleki kangako ezinqubweni zokushisa okuphezulu kakhulu noma ezigqwala kakhulu.

I-Silicon Carbide Tube: Isixazululo Esiphezulu Sokushisa Sokukhiqiza Okuthuthukisiwe Kwe-Semiconductor

I-silicon carbide (SiC) ceramic ivele njengenye into ethembisayo yamapayipi esithando esithuthukisiwe.

I-SiC iyinhlanganisela ye-covalent ceramic equkethe ama-athomu e-silicon ne-carbon. I-SiC ceramics yebanga le-semiconductor ngokuvamile ihlanganisa:

• I-SiC eboshiwe yokusabela;
• I-Sintered SiC;
• Izinto ze-CVD SiC ezihlanzekile kakhulu.

Uma kuqhathaniswa ne-quartz, i-SiC inikeza okuthuthukisiwe kakhulu:

• Ukumelana nokushisa;
• Amandla omshini;
• Ukuqhuba kwe-thermal;
• Ukuqina kwamakhemikhali.

Enye yezinzuzo ezibaluleke kakhulu zamashubhu esithando se-SiC yikhono lawo eliphezulu lokushisa eliphezulu.

Nakuba i-quartz ngokuvamile inqunyelwe ezimweni zokusebenza ezingaba ngu-1200°C, i-SiC ceramics ingamelana namazinga okushisa angaphezu kuka-1500°C, okwenza ifaneleke ezinqubweni zokushisa ezithuthukisiwe.

Umehluko wokushisa kwe-thermal ubalulekile futhi:

• I-Quartz: ~1.4 W/m·K
• I-Silicon Carbide: 120–200 W/m·K

Ukushisa okuphezulu kwe-SiC kwenza:

• Impendulo esheshayo yokushisa;
• Ukufana kwezinga lokushisa okuthuthukisiwe;
• Ukwehla kwe-thermal gradients.

Ezinhlelweni ze-semiconductor, amashubhu esithando se-SiC acatshangelwa kakhulu:

• Ukufakwa kwe-annealing okushisa okuphezulu;
• Izinqubo zokusabalalisa ezithuthukisiwe;
• Ukukhiqizwa kwamadivayisi kagesi e-silicon carbide;
• Ukucutshungulwa kwe-semiconductor ye-GaN.

Ishubhu le-Alumina (Al₂O₃): Izinto ze-Ceramic Ezisebenza Ngezinga Lokushisa Eliphezulu Ezingabizi Kakhulu

Amashubhu e-Alumina ceramic akhiqizwa ngokuyinhloko nge-aluminium oxide (Al₂O₃), ngokuvamile anamazinga okuhlanzeka asukela ku-95% kuya ku-99.8%.

Amandla okushisa okusebenza kwe-alumina ceramics angafinyelela cishe ku: 1400–1700°C. okuphakeme kune-quartz evamile.

Ngenxa yalezi zici, amashubhu esithando se-alumina avame ukusetshenziswa ku:

Izitofu ze-semiconductor zelebhu;

• l Imishini yocwaningo nentuthuko;
• l Izinhlelo zokucubungula ukushisa zokuhlola.

Kodwa-ke, i-alumina isetshenziswa kancane ekukhiqizweni kwe-semiconductor enomthamo omkhulu. Isizathu esiyinhloko ukulawulwa kokungcola.

Uma kuqhathaniswa ne-quartz, i-alumina ceramics ingaletha:

• Ukungcola kwe-aluminium;
• l Amazinga aphezulu okungcola.

Ekukhiqizweni kwe-semiconductor okuthuthukisiwe okudinga amazinga aphansi kakhulu okungcoliswa, i-quartz kanye ne-high-pure SiC kusalokhu kuyizinketho ezikhethwayo.

I-Silicon Nitride Tube (Si₃N₄): I-Ceramic Ethuthukisiwe Yokumelana Nokushaqeka Okushisayo

I-silicon nitride (Si₃N₄) ingenye into yobumba ethuthukisiwe eyaziwa ngezakhiwo zayo eziyingqayizivele zemishini. Izicelo ezingaba khona ze-semiconductor zifaka:

• Izingxenye zesithando ezikhethekile;
• Ucwaningo lwemishini ye-semiconductor;
• Izakhiwo ze-ceramic ezishisa kakhulu.

Kodwa-ke, amashubhu esithando se-Si₃N₄ awasetshenziswa kabanzi kuma-main semiconductor diffusion furnaces ngenxa yalokhu okulandelayo:

• Ubunzima obukhulu bokukhiqiza;
• Izindleko eziphezulu;
• Ukuvuthwa okulinganiselwe kochungechunge lokuhlinzekwa kwempahla yezimboni.

Isiphetho

I-Diffusion Furnace Tube iyingxenye ebalulekile kodwa evame ukunganakwa ekukhiqizweni kwe-semiconductor. Izinto zayo zithonya ngqo:

• Isivuno se-wafer;
• Ukuqina kwenqubo;
• Ukusebenza kwezinhlayiya;
• Isikhathi sokuphila kwemishini.

Okwamanje:

Amashubhu e-quartzilawula izinqubo ezivamile zokushiswa kanye nokusabalalisa ngenxa yobumsulwa bazo obungavamile kanye nokuvuthwa.

Amashubhu e-SiCinikeza ikhono lokushisa elithuthukisiwe lezinhlelo zokusebenza ze-semiconductor zesizukulwane esilandelayo.

Amashubhu e-Alumina ne-silicon nitride asebenza ngokushisa okuphezulu okukhethekile lapho ukusebenza kwemishini kubekwa phambili khona.

Njengoba ukukhiqizwa kwe-semiconductor kuqhubeka nokushisa okuphezulu, ama-wafer amakhulu kanye namadivayisi e-wide-bandgap, izinto ze-ceramic furnace tube ezithuthukisiwe zizodlala indima ebaluleke kakhulu emishinini yenqubo ye-semiconductor yesikhathi esizayo.