Ubuchwephesha baseTshayina baseTshayina Isikhephe seSic sithwala iiWafers zeSilicon singene kwiTeaphu yoBubushushu obuphezulu boKugquma iTubhu yeSiko

Ubuchwephesha baseTshayina isikhephe seSic sithwala iiWafers zeSilicon kwiqondo lobushushu obuphezulu loKugquma iThubhu yeFurnace ebonisiweyo

Inkcazelo emfutshane:

Thumela i-imeyile kuthi Khuphela njengePDF

Iinkcukacha zeMveliso

Iithegi zeMveliso

Amava olawulo lweeprojekthi ezityebileyo ngendlela engakholelekiyo kunye nomntu kwimodeli yenkonzo e-1 yenza ukubaluleka konxibelelwano lwentlangano kunye nokuqonda kwethu ngokulula oko ukulindeleyo kwiChina yobuchwephesha base China Sic Boat Carry Silicon Wafers Kwi-High Temperature Diffusion Coating Coating Furnace Tube, eyona njongo yethu iphambili kukuhlala kuluhlu njengophawu oluphezulu kunye nokukhokela njengovulindlela kwintsimi yethu. Siqinisekile ukuba amava ethu anemveliso ekudalweni kwezixhobo aya kufumana ukuthenjwa ngumthengi, Ndinqwenela ukusebenzisana kunye nokwenza ngokubambisana ixesha elide elingcono nawe!
Amava olawulo lweeprojekthi ezityebileyo ngendlela emangalisayo kunye nomntu kwimodeli yenkonzo e-1 yenza ukubaluleka konxibelelwano lombutho kunye nokuqonda kwethu lula ulindelo lwakho.ETshayina Phatha ii-Silicon Wafers, I-Polycrystallie Silicon Wafer, Wamkele nayiphi na imibuzo yakho kunye neenkxalabo malunga neemveliso zethu. Sijonge phambili ekusekeni ubudlelwane beshishini bexesha elide nawe kungekudala. Qhagamshelana nathi namhlanje. Singamahlakani eshishini lokuqala ukuhambelana neemfuno zakho!
ImvelisoDumbhalo

I-Silicon carbide Wafer Boat isetyenziswa ngokubanzi njengesibambi se-wafer kwinkqubo yokusasazwa kobushushu obuphezulu.

Izinto eziluncedo:

Ukumelana nobushushu obuphezulu:ukusetyenziswa okuqhelekileyo kwi-1800 ℃

I-conductivity ephezulu ye-thermal:ilingana nezinto zegraphite

Ukuqina okuphezulu:ukuqina okwesibini kuphela kwidayimane, i-boron nitride

Ukumelana nokubola:iasidi eyomeleleyo kunye ne-alkali ayinamhlwa kuyo, ukuxhathisa ukubola kungcono kune-tungsten carbide kunye ne-alumina.

Ubunzima obulula:ubuninzi obuphantsi, kufutshane ne-aluminiyam

Akukho deformation: i-coefficient ephantsi yokwandiswa kwe-thermal

Ukuxhathisa ukothuka kwe-Thermal:inokumelana nokutshintsha kobushushu obubukhali, ukuxhathisa ukothuka kwe-thermal, kwaye inokusebenza okuzinzile

IiPropati zoBume beSiC

Ipropati	Ixabiso	Indlela
Ukuxinana	3.21 g/cc	I-Sink-float kunye ne-dimension
Ubushushu obuthile	0.66 J/g °K	I-Pulsed laser flash
Amandla e-Flexural	450 MPa560 MPa	I-4 point bend, i-RT4 point bend, i-1300 °
Ukuqina kokwaphuka	2.94 MPa m1/2	I-Microindentation
Ukuqina	2800	Vicker's, 500g umthwalo
Elastic ModulusOlutsha's Modulus	450 GPA430 GPA	4 pt ukugoba, RT4 pt ukugoba, 1300 °C
Ubungakanani beenkozo	2 – 10 µm	I-SEM

Iipropati zoThermal zeSiC

I-Thermal Conductivity	250 W/m °K	Indlela yeLaser flash, RT
Ukwandiswa kweThermal (CTE)	4.5 x 10-6 °K	Ubushushu begumbi ukuya kuma-950 °C, i-silica dilatometer