Isikebhe Esichwepheshile saseShayina Sic Sithwala Ama-Silicon Wafers Siwafake Kwishubhu Lesithando Sokushisa Esiphezulu Sokusabalalisa Ukushisa

Incazelo emfushane:


Imininingwane Yomkhiqizo

Amathegi Omkhiqizo

Okuhlangenwe nakho kokuphathwa kwamaphrojekthi okucebile kakhulu kanye nemodeli yesevisi yomuntu oyedwa kwenza ukubaluleka okukhulu kokuxhumana kwenhlangano kanye nokuqonda kwethu okulula kokulindela kwakho kwe-Professional China China Sic Boat Carry Silicon Wafers Into The High Temperature Diffusion Coating Furnace Tube, Umgomo wethu oyinhloko uhlale usezingeni njengomkhiqizo ohamba phambili kanye nokuhola njengephayona emkhakheni wethu. Siyaqiniseka ukuthi ulwazi lwethu olukhiqizayo ekudaleni amathuluzi luzokwenza amakhasimende akwethembe, Sifisa ukubambisana futhi sidale isikhathi eside esingcono nawe!
Okuhlangenwe nakho okucebile kakhulu kokuphathwa kwamaphrojekthi kanye nemodeli yesevisi yomuntu oyedwa kwenza ukubaluleka okukhulu kokuxhumana kwenhlangano kanye nokuqonda kwethu okulula okulindelekile kuwe.Ama-Wafer e-Silicon Carry aseShayina, I-Polycrystallie Silicon Wafer, Siyakwamukela noma yimiphi imibuzo yakho kanye nokukhathazeka ngemikhiqizo yethu. Silangazelela ukwakha ubudlelwano bebhizinisi besikhathi eside nawe maduze nje. Xhumana nathi namuhla. Singabalingani bokuqala bebhizinisi abafanela izidingo zakho!
UmkhiqizoDincazelo

Isikebhe se-Wafer se-Silicon carbide sisetshenziswa kabanzi njengesibambi se-wafer enkambisweni yokusabalalisa izinga lokushisa eliphezulu.

Izinzuzo:

Ukumelana nokushisa okuphezulu:ukusetshenziswa okuvamile ku-1800 ℃

Ukushisa okuphezulu:okulingana nezinto ze-graphite

Ubulukhuni obuphezulu:ubulukhuni bulandela idayimane kuphela, i-boron nitride

Ukumelana nokugqwala:i-asidi enamandla ne-alkali azinawo ugqwala kuyo, ukumelana nokugqwala kungcono kune-tungsten carbide ne-alumina

Isisindo esincane:ukuminyana okuphansi, eduze ne-aluminium

Akukho ukuguqulwa: i-coefficient ephansi yokwanda kokushisa

Ukumelana nokushaqeka kokushisa:ingamelana nokushintsha kwezinga lokushisa okukhulu, imelane nokushaqeka kokushisa, futhi inamandla okusebenza kahle

 

Izakhiwo Ezibonakalayo Ze-SiC

Impahla Inani Indlela
Ubuningi 3.21 g/cc Ukuntanta kwesinki kanye nobukhulu
Ukushisa okukhethekile 0.66 J/g °K I-flash ye-laser evuvukile
Amandla okugobeka 450 MPa560 MPa Ukugoba okunezikhombo ezi-4, ukugoba okunezikhombo ezi-RT4, 1300°
Ukuqina kokuphuka 2.94 MPa m1/2 Ukugoba okuncane
Ubulukhuni 2800 I-Vicker's, umthwalo ongu-500g
I-Modulus Elastic I-Modulus kaYoung 450 GPa430 GPa Ukugoba okungu-4 pt, ukugoba okungu-4 pt, 1300 °C
Usayizi wezinhlamvu 2 – 10 µm I-SEM

 

Izakhiwo Zokushisa Ze-SiC

Ukuqhuba Okushisayo 250 W/m °K Indlela ye-laser flash, RT
Ukwanda Kokushisa (i-CTE) 4.5 x 10-6 °K Izinga lokushisa legumbi lifinyelela ku-950 °C, i-silica dilatometer

 

 

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