Reaction sintering silicon carbide is a method for preparing high performance ceramic materials. It reacts and presses silicon carbide powder with other chemicals under high temperature conditions ...
Atmospheric pressure sintered silicon carbide is a non-metallic carbide with silicon and carbon covalent bond, and its hardness is second only to diamond and boron carbide. The chemical formula is ...
We use time- and angle-resolved photoemission spectroscopy (tr-ARPES) to investigate ultrafast charge transfer in an epitaxial heterostructure made of monolayer WS2 and graphene. This heterostructu...
TaC coating is a high-performance ceramic layer, critical for advanced semiconductor fabrication. It is essential for SiC single crystal growth and GaN/SiC epitaxial growth processes. The GaN/SiC ...
The PVT method, whose full name is Physical Vapor Transportation, is a common method for growing silicon carbide (SiC)crystals under high temperature and high pressure. Its basic principle is to he...
The manufacturing of each semiconductor product requires hundreds of processes. We divide the entire manufacturing process into eight steps: wafer processing-oxidation-photolithography-etching-thin...