CVD Coatings for Advanced Semiconductor Processing
Engineered for critical semiconductor manufacturing environments, our Chemical Vapor Deposition (CVD) Silicon Carbide (SiC), Tantalum Carbide (TaC), and Pyrolytic Carbon (PyC) coatings deliver outstanding chemical inertness, extreme thermal stability, and ultra-high purity (< 5 ppm). Designed to protect high-purity graphite and ceramic substrates from aggressive plasma, reactive process gases, and high thermal cycling, our advanced coatings minimize particle generation and significantly extend component lifespan in Silicon/SiC Epitaxy, MOCVD, Plasma Etching, and Monocrystal Growth applications.
GDMS-verified low metallic impurities to prevent wafer contamination in critical processes.
Dense crystalline structure protects against halogen plasma (CF₄, NF₃, Cl₂) and corrosive gases.
Strict CTE control eliminates micro-cracking and coating delamination under severe thermal shocks.
| Coating Type | Key Technical Advantage | Primary Process Application |
|---|---|---|
| CVD SiC Coating | High thermal conductivity, excellent plasma erosion resistance | Dry Etch, Si Epitaxy, MOCVD, Crystal Growth |
| CVD TaC Coating | Extreme temperature resistance (>2000°C), H₂/SiH₄ corrosion barrier | SiC Epitaxy, Single-Crystal SiC PVT Growth |
| PyC Coating | Hermetic gas sealing, ultra-smooth anisotropic carbon surface | Thermal field insulation, CZ Monocrystalline Silicon |
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Tantalum Carbide Coating Wafer Susceptor
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High Purity CVD Solid SiC Bulk
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Epitaxial Epi Graphite Barrel Susceptor
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Porous Tantalum Carbide Coated Barrel
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Barrel Susceptor For Liquid Phase Epitaxy LPE
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High Purity Tantalum Carbide Coated Ring
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TaC Coated Graphite Segment Splicing Ring
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Customized parts with TaC tantalum carbide coating
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TaC coated graphite lids manufacturer