CVD Coatings for Advanced Semiconductor Processing
Engineered for critical semiconductor manufacturing environments, our Chemical Vapor Deposition (CVD) Silicon Carbide (SiC), Tantalum Carbide (TaC), and Pyrolytic Carbon (PyC) coatings deliver outstanding chemical inertness, extreme thermal stability, and ultra-high purity (< 5 ppm). Designed to protect high-purity graphite and ceramic substrates from aggressive plasma, reactive process gases, and high thermal cycling, our advanced coatings minimize particle generation and significantly extend component lifespan in Silicon/SiC Epitaxy, MOCVD, Plasma Etching, and Monocrystal Growth applications.
GDMS-verified low metallic impurities to prevent wafer contamination in critical processes.
Dense crystalline structure protects against halogen plasma (CF₄, NF₃, Cl₂) and corrosive gases.
Strict CTE control eliminates micro-cracking and coating delamination under severe thermal shocks.
| Coating Type | Key Technical Advantage | Primary Process Application |
|---|---|---|
| CVD SiC Coating | High thermal conductivity, excellent plasma erosion resistance | Dry Etch, Si Epitaxy, MOCVD, Crystal Growth |
| CVD TaC Coating | Extreme temperature resistance (>2000°C), H₂/SiH₄ corrosion barrier | SiC Epitaxy, Single-Crystal SiC PVT Growth |
| PyC Coating | Hermetic gas sealing, ultra-smooth anisotropic carbon surface | Thermal field insulation, CZ Monocrystalline Silicon |
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TaC Coated Susceptor for Epitaxy Equipment
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Tantalum Carbide Coated Segment Ring
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High Purity Solid CVD SiC Bulk With Graphite Base
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High-performance tantalum carbide coated porous...
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Tantalum carbide coated porous graphite material
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Tantalum Carbide Coating Guide Rings
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Tantalum Carbide Coating Ring
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Customized TaC Coated Graphite Crucible
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TaC Coating Guide Ring