SiC Sintered Silicon Carbide Yumbu Bushing

SiC Sintered Silicon Carbide Ceramic Bushing Hotunan da aka Fito

Takaitaccen Bayani:

Sinadarin Sinadari:Silicon Carbide

Tauri:≥110 HS

Yawan yawa: 3.10-3.15 g/cm3

Ƙarfin lanƙwasawa:>350MPa

Maida wutar lantarki:>120

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Cikakken Bayani game da Samfurin

Alamun Samfura

Sintered Silicon Carbide yumbu Bushing

Silinda mai sintered silicon carbide (SSIC)Ana samar da shi ta amfani da foda mai kyau na SiC wanda ke ɗauke da ƙarin sinadarai na sintering. Ana sarrafa shi ta amfani da hanyoyin samar da abubuwa da aka saba amfani da su ga sauran yumbu kuma ana yin sintering a 2,000 zuwa 2,200°C a cikin yanayin iskar gas mara aiki. Baya ga nau'ikan sintering masu kyau, tare da girman hatsi ƙasa da 5 um, akwai nau'ikan sintering masu kauri tare da girman hatsi har zuwa 1.5 mm.

Ana bambanta SSIC ta hanyar ƙarfi mai ƙarfi wanda ke tsayawa kusan daidai har zuwa yanayin zafi mai yawa (kimanin 1,600° C), yana riƙe wannan ƙarfin na tsawon lokaci!

Fa'idodin samfur:

Juriyar iskar shaka mai zafi

Kyakkyawan juriya ga lalata

Kyakkyawan juriya ga abrasion

Babban ma'aunin wutar lantarki mai ƙarfi
Man shafawa mai ƙanƙanta, ƙarancin yawa
Babban tauri
Tsarin da aka keɓance.

Kayayyakin fasaha:

Abubuwa	Naúrar	Bayanai
Tauri	HS	≥110
Matsakaicin Porosity	%	<0.3
Yawan yawa	g/cm3	3.10-3.15
Matsi	MPa	>2200
Ƙarfin Karyewa	MPa	>350
Faɗaɗawa mai yawa	10/°C	4.0
Abubuwan da ke cikin Sic	%	≥99
Maida wutar lantarki ta thermal	W/mk	>120
Modulus mai laushi	GPA	≥400
Zafin jiki	°C	1380