Pūihi Ukume Silicon Carbide SiC Sintered

Whakaahuatanga Poto:

Hanganga Matū: Hiraka Warowaihā

Pakari: ≥110 HS

Kiato: 3.10-3.15 karamu/cm3

Kaha Piko:>350MPa

Te kawe wera:>120

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Taipitopito Hua

Ngā Tohu Hua

Pūihi Ukume Silicon Carbide kua Whakatōngia

Karāhe silicon carbide kore-pēhanga (SSIC)Ka hangaia mā te whakamahi i te paura SiC tino pai kei roto ngā tāpiringa sintering. Ka tukatukahia mā te whakamahi i ngā tikanga hanga e whakamahia ana mō ētahi atu uku, ā, ka sinted i te 2,000 ki te 2,200° C i roto i te hau hau kore mahi. Haunga ngā momo kiko pai, me te rahi o te kiko < 5 um, kei te wātea ngā momo kiko matotoru me te rahi o te kiko tae atu ki te 1.5 mm.

He mea motuhake te SSIC nā tōna kaha nui e mau tonu ana tae noa ki ngā pāmahana tino teitei (tata ki te 1,600° C), ā, e mau tonu ana taua kaha mō ngā wā roa!

Ngā painga o te hua:

Te ātete waikura pāmahana teitei

Ātete pai rawa atu ki te waikura

Ātete pai ki te pakū

Teitei o te kawe wera
Te whakahinuhinu-ā-roto, te iti o te mātotoru
Te pakeketanga teitei
Hoahoa ritenga.

Ngā āhuatanga hangarau:

Ngā taonga	Wāhanga	Raraunga
Te pakeketanga	HS	≥110
Te Auau Pūwero	%	<0.3
Kiato	karamu/cm3	3.10-3.15
Whakakōpeke	MPa	>2200
Kaha Whati	MPa	>350
Tauwehenga o te whakawhānui	10/°C	4.0
Ngā ihirangi o Sic	%	≥99
Te kawe wera	W/mk	>120
Tauwehenga Ātete	GPa	≥400
Te pāmahana	°C	1380