I-SiC Sintered Silicon Carbide Ceramic Bushing

Isithombe Esifakiwe Se-SiC Sintered Silicon Carbide Ceramic Bushing

Incazelo emfushane:

Ukwakheka Kwamakhemikhali: I-Silicon Carbide

Ubulukhuni: ≥110 HS

Ubuningi: 3.10-3.15 g/cm3

Amandla Okugoba:>350MPa

Ukuqhuba kwe-thermal:>120

Sithumelele i-imeyili Landa njenge-PDF

Imininingwane Yomkhiqizo

Amathegi Omkhiqizo

I-Sintered Silicon Carbide Ceramic Bushing

I-silicon carbide engenangcindezi (SSIC)ikhiqizwa kusetshenziswa i-SiC powder ecolekile kakhulu equkethe izithasiselo zokusila. Icutshungulwa kusetshenziswa izindlela zokwakha ezivamile kwezinye izinto zobumba futhi isila ku-2,000 kuya ku-2,200° C endaweni engcolile yegesi. Kanye nezinguqulo ezicolekile, ezinobukhulu bokusanhlamvu < 5 um, izinguqulo ezicolekile ezinobukhulu bokusanhlamvu obufika ku-1.5 mm ziyatholakala.

I-SSIC ihlukaniswa ngamandla aphezulu ahlala cishe engaguquki kuze kufike emazingeni okushisa aphezulu kakhulu (cishe angu-1,600°C), igcina lawo mandla isikhathi eside!

Izinzuzo zomkhiqizo:

Ukumelana nokushisa okuphezulu kwe-oxidation

Ukumelana okuhle kakhulu kokugqwala

Ukumelana okuhle kwe-Abrasion

I-coefficient ephezulu yokuqhuba ukushisa
Ukuzigcoba, ukuminyana okuphansi
Ubulukhuni obuphezulu
Idizayini eyenziwe ngokwezifiso.

Izakhiwo zobuchwepheshe:

Izinto	Iyunithi	Idatha
Ubulukhuni	HS	≥110
Izinga Lokumboza Ububanzi	%	<0.3
Ubuningi	g/cm3	3.10-3.15
Ukucindezela	I-MPa	>2200
Amandla Okuqhekeka	I-MPa	>350
Isilinganiso sokunwetshwa	10/°C	4.0
Okuqukethwe kwe-Sic	%	≥99
Ukuqhuba kwe-thermal	I-W/mk	>120
I-Modulus Enwebekayo	I-GPa	≥400
Izinga lokushisa	°C	1380