I-SiC Sintered Silicon Carbide Ceramic Bushing

Umfanekiso oBonisiweyo weSiC Sintered Silicon Carbide Ceramic Bushing

Inkcazo emfutshane:

Ukwakhiwa kweekhemikhali: iSilicon Carbide

Ubunzima: ≥110 HS

Ubuninzi: 3.10-3.15 g/cm3

Amandla okugoba:>350MPa

Ukuqhuba kwe-thermal:>120

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Iinkcukacha zeMveliso

Iithegi zeMveliso

I-Sintered Silicon Carbide Ceramic Bushing

I-silicon carbide engenaxinzelelo (SSIC)iveliswa kusetyenziswa umgubo we-SiC ocolekileyo kakhulu oqulethe izongezo zokusila. Icutshungulwa kusetyenziswa iindlela zokwenza izinto eziqhelekileyo kwezinye iiseramikhi kwaye icutshungulwe kwi-2,000 ukuya kwi-2,200°C kwindawo enegesi engangeniyo. Kunye neenguqulelo ezicoliweyo, ezinobukhulu beenkozo <5 um, iinguqulelo ezicoliweyo ezinobukhulu beenkozo ezifikelela kwi-1.5 mm ziyafumaneka.

I-SSIC yahlukile ngamandla aphezulu ahlala phantse engaguqukiyo ukuya kuthi ga kumaqondo obushushu aphezulu kakhulu (malunga ne-1,600°C), igcina loo mandla ixesha elide!

Iingenelo zemveliso:

Ukumelana ne-oxidation yobushushu obuphezulu

Ukumelana okuhle kakhulu nokugqwala

Ukumelana okuhle kwe-Abrasion

I-coefficient ephezulu yokuqhuba ubushushu
Ukuzithambisa, uxinano oluphantsi
Ubulukhuni obuphezulu
Uyilo olulungiselelwe wena.

Iimpawu zobugcisa:

Izinto	Iyunithi	Idatha
Ukuqina	HS	≥110
Izinga lokubola	%	<0.3
Uxinano	g/cm3	3.10-3.15
Icinezelekileyo	I-MPa	>2200
Amandla okuqhekeka	I-MPa	>350
I-coefficient yokwandisa	10/°C	4.0
Umxholo weSic	%	≥99
Ukuqhuba kobushushu	W/mk	>120
Imodulus ye-Elastic	I-GPa	≥400
Ubushushu	°C	1380