ʻO ka ʻūpā keramika Silicon Carbide Sintered SiC

Kiʻi i hōʻike ʻia ʻo SiC Sintered Silicon Carbide Ceramic Bushing

Wehewehe Pōkole:

Hoʻohuihui Kemika: Silicon Carbide

Paʻakikī: ≥110 HS

Ka nui o ka paʻa: 3.10-3.15 g/cm3

Ikaika Kūlou:>350MPa

Ka hoʻokele wela:>120

E leka uila mai iā mākou Hoʻoiho ma ke ʻano he PDF

Nā kikoʻī huahana

Nā Lepili Huahana

ʻO ka ʻūpā keramika Silicon Carbide Sintered

ʻO ka carbide silicon sintered pressureless (SSIC)Hana ʻia me ka hoʻohana ʻana i ka pauka SiC maikaʻi loa e loaʻa ana nā mea hoʻohui sintering. Hana ʻia ia me ka hoʻohana ʻana i nā ʻano hana hoʻokumu maʻamau no nā keramika ʻē aʻe a sintered ma 2,000 a 2,200° C i loko o kahi lewa kinoea inert. Me nā mana maikaʻi, me nā nui o ka palaoa < 5 um, loaʻa nā mana coarse-grained me nā nui o ka palaoa a hiki i ka 1.5 mm.

ʻOkoʻa ka SSIC e ka ikaika kiʻekiʻe e noho mau ana a hiki i nā mahana kiʻekiʻe loa (ma kahi o 1,600° C), e mālama ana i kēlā ikaika no nā wā lōʻihi!

Nā pono huahana:

Ke kūpaʻa ʻana i ka oxidation wela kiʻekiʻe

Kū'ē maikaʻi loa i ka palaho

Ke kūpaʻa maikaʻi o ka abrasion

Ka nui o ke alakaʻi wela
ʻO ka lubrication ponoʻī, ka haʻahaʻa haʻahaʻa
Paʻakikī kiʻekiʻe
Hoʻolālā i hoʻopilikino ʻia.

Nā waiwai loea:

Nā Mea	ʻĀpana	ʻIkepili
Paʻakikī	HS	≥110
Ka helu porosity	%	<0.3
Ka nui o ka paʻa	g/cm3	3.10-3.15
Hoʻopaʻa	MPa	>2200
Ikaika Haʻihaʻi	MPa	>350
Ka helu hoʻonui	10/°C	4.0
ʻIke o Sic	%	≥99
Ka hoʻokele wela	W/mk	>120
Modulus Elastic	GPa	≥400
Mahana	°C	1380