SiC Sintered Silicon Carbide Ceramic Bushing

Tsanangudzo Pfupi:

Kemikari Kuumbwa: Silicon Carbide

Kuoma:≥110 HS

Density:3.10-3.15 g/cm3

Kubhenda Simba:> 350MPa

Thermal conductivity:> 120

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Sintered Silicon Carbide Ceramic Bushing

Pressureless sintered silicon carbide (SSIC)inogadzirwa uchishandisa yakanakisa SiC poda ine sintering additives. Inogadziriswa uchishandisa nzira dzekugadzira dzinowanzoita kune mamwe makeramiki uye sintered pa 2,000 kusvika 2,200 ° C mune inert gas atmosphere.Pamwe chete neyakagadzirwa-grained versions, nehukuru hwezviyo <5 um, coarse-grained versions nehukuru hwezviyo kusvika ku 1.5 mm inowanikwa.

SSIC inosiyaniswa nesimba repamusoro rinogara rakada kufanana kusvika kune tembiricha yakanyanya (inenge 1,600 ° C), kuchengetedza iro simba kwenguva refu!

Product zvakanakira:

High tembiricha oxidation kuramba

Yakanakisa Corrosion resistance

Zvakanaka Abrasion kuramba

High coefficient yekupisa conductivity
Self-lubricity, low density
High kuoma
Customized dhizaini.

Technical properties:

Items	Unit	Data
Kuoma	HS	≥110
Porosity Rate	%	<0.3
Density	g/cm3	3.10-3.15
Compressive	MPa	>2200
Fractural Strength	MPa	>350
Coefficient yekuwedzera	10/°C	4.0
Zviri mukati meSic	%	≥99
Thermal conductivity	W/mk	>120
Elastic Modulus	GPa	≥400
Tembiricha	°C	1380